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    K1S2816BCM Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K1S2816BCM Samsung Electronics 8Mx16 bit Page Mode Uni-Transistor Random Access Memory Original PDF
    K1S2816BCM-I Samsung Electronics 8Mx16 bit Page Mode Uni-Transistor Random Access Memory Original PDF

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    K1S2816BCM

    Abstract: K1S2816BCM-I
    Text: K1S2816BCM UtRAM Document Title 8Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design Target April 12, 2004 Preliminary 0.1 Revised July 12, 2004 - Updated "TIMING WAVEFORM OF WRITE CYCLE 1 (WE Controlled)" in page 8 and added tWHP(WE High Pulse Width) parameter


    Original     		PDF K1S2816BCM 8Mx16 K1S2816BCM K1S2816BCM-I