TFSM
Abstract: KTC3730F
Text: SEMICONDUCTOR KTC3730F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E Low Noise Figure, High Gain. B D G 2 3 K A Small rbb Cc Typ. 4pS . MAXIMUM RATING (Ta=25 ) SYMBOL RATING UNIT Collector-Base Voltage
|
Original
|
KTC3730F
500MHz
TFSM
KTC3730F
|
PDF
|
KTC3605T
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3605T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES K K B DIM A B C D E 1 6 G 2 5 G ・Low Noise Figure, High Gain. 3 4 ・NF=1.1dB, |S21e| =13dB f=1GHz . 2 D F A ・Two internal isolated Transistors in one package.
|
Original
|
KTC3605T
-j250
-j150
-j100
KTC3605T
|
PDF
|
KTC3605T
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3605T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES K K B DIM A B C D E 1 6 G 2 5 G Low Noise Figure, High Gain. 3 4 2 NF=1.1dB, |S21e| =13dB f=1GHz . D F A Two internal isolated Transistors in one package.
|
Original
|
KTC3605T
-j250
-j150
-j100
KTC3605T
|
PDF
|
KTC3730V
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3730V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B Low Noise Figure, High Gain. Small rbb’Cc Typ. 4pS . D G H A 2 1 K 3 MAXIMUM RATING (Ta=25 ) SYMBOL RATING UNIT Collector-Base Voltage
|
Original
|
KTC3730V
500MHz
KTC3730V
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3730V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B Low Noise Figure, High Gain. Small rbb’Cc Typ. 4pS . D G H A 2 1 K 3 MAXIMUM RATING (Ta=25 ) SYMBOL RATING UNIT Collector-Base Voltage
|
Original
|
KTC3730V
500MHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3730F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E ・Low Noise Figure, High Gain. B D G 2 3 K A ・Small rbb’Cc Typ. 4pS . MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Collector-Base Voltage
|
Original
|
KTC3730F
500MHz
|
PDF
|
KTC3620S
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3620S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF/WIDE BAND AMPLIFIER APPLICATON. E B L L FEATURES DIM A B C D E G H J K L M N P Q ・High Gain. D ・Low Noise Figure. 3 G H A 2 1 Q J K MAXIMUM RATING Ta=25℃ CHARACTERISTIC P
|
Original
|
KTC3620S
KTC3620S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3730F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E ・Small rbb Cc Typ. 4pS . B D G 2 3 K A ・Low Noise Figure, High Gain. MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Collector-Base Voltage
|
Original
|
KTC3730F
500MHz
500MHz,
|
PDF
|
KTC3770V
Abstract: transistor j50 marking s22
Text: SEMICONDUCTOR KTC3770V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=11dB f=1GHz . D G H A 2 1 K 3 MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage
|
Original
|
KTC3770V
-j250
-j150
-j100
KTC3770V
transistor j50
marking s22
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3770F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E Low Noise Figure, High Gain. B D G 2 3 K A NF=1.1dB, |S21e|2=11dB f=1GHz . MAXIMUM RATING (Ta=25 1 SYMBOL RATING UNIT Collector-Base Voltage
|
Original
|
KTC3770F
-j250
-j150
-j100
-j100
|
PDF
|
j50 transistor
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3770F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E ・Low Noise Figure, High Gain. B D G 2 3 K A ・NF=1.1dB, |S21e|2=11dB f=1GHz . MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Collector-Base Voltage
|
Original
|
KTC3770F
-j250
-j150
-j100
-j100
j50 transistor
|
PDF
|
KTC3770V
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3770V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=11dB f=1GHz . D G H A 2 1 K 3 MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage
|
Original
|
KTC3770V
-j250
-j150
-j100
KTC3770V
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3640V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF/WIDE BAND AMPLIFIER APPLICATON. E FEATURES B ・Low Noise Figure, High Gain. ・NF=1.4dB, S21e 2=9.0dB 2GHz D G H A 2 1 K 3 MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Collector-Base Voltage
|
Original
|
KTC3640V
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3770F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E ・NF=1.1dB, |S21e|2=11dB f=1GHz . B D G 2 3 K A ・Low Noise Figure, High Gain. MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Collector-Base Voltage
|
Original
|
KTC3770F
-j250
-j150
-j100
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC2762 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SC2762 is an NPN silicon epitaxial transistor designed for UHF-band medium power amplifiers.
|
OCR Scan
|
2SC2762
2SC2762
|
PDF
|
2SC1200
Abstract: feed through capacitor
Text: SILICON NPN EPITAXIAL PLANAR TRANSISTOR O UHF - S ^ K I Î J Ü S f f l O UHF ù o il ft X UHF~S Band Power A m p lifie r A p p lic a tio n s . UHF-S Band O s c il l a t o r A p p lic a tio n s . * & f t ^ £ S g T =r V* mm INDUSTRIAL APPLICATIONS l^ o Lx*t> t-t*
|
OCR Scan
|
2SC1200
C1200
2SCI200
2SC1200
feed through capacitor
|
PDF
|
2SC3120
Abstract: No abstract text available
Text: 2SC3120 TO SH IBA 2 S C 3 1 20 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV TUNER, UHF MIXER APPLICATIONS VHF ~ UHF BAND RF AMPLIFIER APPLICATIONS + 0.5 2 .5 -0 .3 + 0.25 k 1-5 I- MAXIMUM RATINGS Ta = 25°C SYMBOL VCBO VCEO v EBO ic
|
OCR Scan
|
2SC3120
2SC3120
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC3862 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3862 TV TUNER, UHF MIXER APPLICATIONS. VH F-U HF BAND RF AMPLIFIER APPLICATIONS. Exchange of Emitter for Base in 2SC3120 MAXIMUM RATINGS Ta = 25°C u HA k ACt .u k IS t IC Collector-Base Voltage
|
OCR Scan
|
2SC3862
2SC3120
|
PDF
|
transistor NEC D 587
Abstract: NEC D 587 TRANSISTOR R44 z 607 ma 2SC3585 transistor 5951 nec 1041
Text: DATA SHEET SILICON TRANSISTOR 2SC3585 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR DESCRIPTION P A C K A G E DIM ENSIO NS Units: mm The 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.
|
OCR Scan
|
2SC3585
2SC3585
transistor NEC D 587
NEC D 587
TRANSISTOR R44
z 607 ma
transistor 5951
nec 1041
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 3SK153 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3 <; k 1 * Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. TV TUNER VHF WIDE BAND RF AMPLIFIER APPLICATIONS. + 0.2 2 . 9 - Cl3 • Superior Cross Modulation Performance.
|
OCR Scan
|
3SK153
025pF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 3SK153 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3 S K 1 53 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. TV TUNER VHF WIDE BAND RF AMPLIFIER APPLICATIONS. + 0.2 2 .9 - tt 3 • Superior Cross Modulation Performance.
|
OCR Scan
|
3SK153
025pF
|
PDF
|
3SK153
Abstract: 52S marking SK153 200-I
Text: TOSHIBA 3SK153 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3 S K 1 53 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS TV TUNER VHF WIDE BAND RF AMPLIFIER APPLICATIONS • • • + 0.2 2 .9 Superior Cross Modulation Performance.
|
OCR Scan
|
3SK153
025pF
3SK153
52S marking
SK153
200-I
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5315 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5315 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Unit in mm + 0.5 2.5-0.3 + 0.25 k 1-5 - ° - 15>i • Low Noise Figure : NF = 1.3dB (f=2GHz) •
|
OCR Scan
|
2SC5315
16GHz
SC-59
|
PDF
|
313-105
Abstract: 2SK3179 ET 8211 0737 8178 0.514 740 1025 5688 el 7406
Text: TOSHIBA 2SK3179 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2 S K 3 1 79 UHF-SHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure • High Gain MAXIMUM RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Gate-Drain Voltage
|
OCR Scan
|
2SK3179
SYM57
313-105
2SK3179
ET 8211
0737 8178
0.514 740 1025 5688
el 7406
|
PDF
|
