AJT150
Abstract: ASI10548
Text: AJT150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AJT150 is a common base RF power transistor primarily designed for pulsed avionics applications such as, mode-s TCAS and JTIDS. A 4x .062 x 45° 2xB C F E D G 2xR FEATURES:
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AJT150
AJT150
ASI10548
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AJT006
Abstract: ASI10544 transistor j852
Text: AJT006 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° .040 x 45° C 2xB The ASI AJT006 is Designed for 9 – 1215 MHz, JTIDS Applications. ØE D F G H I FEATURES: M • Internal Input/Output Matching Network • PG = 9.3 dB at 6.0 W/1215 MHz
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AJT006
AJT006
ASI10544
transistor j852
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Untitled
Abstract: No abstract text available
Text: AJT150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AJT150 is Designed for 960 – 1215 MHz, JTIDS Applications. A 4x .062 x 45° 2xB C F E FEATURES: .040 x 45° D G • Internal Input/Output Matching Network • PG = 7.5 dB at 150 W/ 1215 MHz
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AJT150
AJT150
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AM0912-150
Abstract: JTIDS 2L TRANSISTOR "RF Power Transistor"
Text: AM0912-150 RF POWER TRANSISTOR PACKAGE - .400 X .500 2L FLG DESCRIPTION: The ASI AM0912-150 is a Common Base Transistor Designed for TCAS and JTIDS Pulse Power Amplifier Applications. FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching
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AM0912-150
AM0912-150
JTIDS
2L TRANSISTOR
"RF Power Transistor"
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AM80912-015
Abstract: No abstract text available
Text: AM80912-015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI AM80912-015 is designed for avionics applications, including JTIDS. It is housed in a Hermetic Package. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network
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AM80912-015
AM80912-015
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MS2213
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2213 RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS Features • • • • • • • • REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED
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MS2213
MS2213
MSC0920
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motorola rf Power Transistor t 228
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF10031/D SEMICONDUCTOR TECHNICAL DATA Microwave Long Pulse Power Transistor MRF10031 Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc
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MRF10031/D
MRF10031
MRF10031/D*
MRF10031/D
motorola rf Power Transistor t 228
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bd 142 transistor
Abstract: No abstract text available
Text: Part Number: Integra IB0912L200 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band JTIDS Transistor Class C Operation − High Efficiency The high power pulsed transistor device part number IB0912L200 is designed for systems operating over the instantaneous bandwidth of
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IB0912L200
IB0912L200
IB0912L200-REV-NC-DS-REV-C
bd 142 transistor
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Untitled
Abstract: No abstract text available
Text: BLA6H0912-500 LDMOS avionics radar power transistor Rev. 04 — 10 May 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN.
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BLA6H0912-500
BLA6H0912-500
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D 1651 transistor
Abstract: AJT030 ASI10546
Text: AJT030 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: L J N O A The ASI AJT030 is a Class-c RF power transistor, designed for JTIDS pulsed output & driver applications from 960 to 1215 MHz. B E K D C .062 x 45° M G FEATURES: F Ø.120
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AJT030
AJT030
D 1651 transistor
ASI10546
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376B
Abstract: MRF10031 motorola rf Power Transistor
Text: MOTOROLA Order this document by MRF10031/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Long Pulse Power Transistor MRF10031 Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc
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MRF10031/D
MRF10031
MRF10031/D*
376B
MRF10031
motorola rf Power Transistor
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MRF10120
Abstract: motorola rf Power Transistor MOTOROLA 381 equivalent transistor j222 J280
Text: MOTOROLA Order this document by MRF10120/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Long Pulse Power Transistor MRF10120 Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc
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MRF10120/D
MRF10120
MRF10120/D*
MRF10120
motorola rf Power Transistor
MOTOROLA 381 equivalent
transistor j222
J280
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Untitled
Abstract: No abstract text available
Text: AJT015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI AJT015 is a silicon bipolar power transistor designed for avionics applications including JTIDS in 960-1215 MHz band. ØE D F G H I FEATURES: M MINIMUM inches / mm
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AJT015
AJT015
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AJT085
Abstract: ASI10547
Text: AJT085 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2NL FLG DESCRIPTION: A .0 2 5 x 4 5 ° 4 x .0 6 2 x 4 5 ° 2X B The ASI AJT085 is Designed for 960 –1215 MHz, JTIDS Applications. ØD C E F G FEATURES: H • Internal Input/Output Matching Network
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AJT085
AJT085
ASI10547
ASI10547
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DM-Q71-1-1 JTIDS Antenna
Abstract: DM Q71-1-1 JTIDS jtids antenna DM-Q71-1-1 q71-1-1 Q71-1-1 JTIDS Antenna Q711 Horizon Technology array antenna
Text: GROUND/MOBILE DM Q71-1-1 JTIDS ANTENNA The DM Q71-1-1 JTIDS antenna was designed as the ground antenna for the Army JTIDS Program. The high gain vertical dipole array provides maximum antenna gain at the horizon for LOS communications. MECHANICAL ELECTRICAL
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Q71-1-1
DM-Q71-1-1 JTIDS Antenna
DM Q71-1-1
JTIDS
jtids antenna
DM-Q71-1-1
Q71-1-1 JTIDS Antenna
Q711
Horizon Technology
array antenna
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transistor j222
Abstract: MOTOROLA 381 equivalent motorola transistor 307 MRF10120 motorola rf Power Transistor
Text: MOTOROLA Order this document by MRF10120/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Long Pulse Power Transistor MRF10120 Designed for 960 – 1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc
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MRF10120/D
MRF10120
MRF10120/D*
transistor j222
MOTOROLA 381 equivalent
motorola transistor 307
MRF10120
motorola rf Power Transistor
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Power Transistor MRF10005 . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles.
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MRF10005
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AM80912-030
Abstract: No abstract text available
Text: AM80912-030 RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE
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AM80912-030
AM80912-030
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BLA6H0912-500
Abstract: No abstract text available
Text: BLA6H0912-500 LDMOS avionics radar power transistor Rev. 01 — 5 March 2009 Objective data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN.
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BLA6H0912-500
BLA6H0912-500
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Untitled
Abstract: No abstract text available
Text: 5 7 . SGS-THOMSON AM80912-030 m RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE
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AM80912-030
AM80912-030
J133102E
00bS043
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Untitled
Abstract: No abstract text available
Text: Aß Avionics Pulsed Power Transistor PH0912-5 Preliminary 5 Watts, 960-1215 MHz, 7 us Pulse, 50% Duty Features Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation
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PH0912-5
Sb42205
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CC 1215
Abstract: No abstract text available
Text: Aß Avionics Pulsed Power Transistor PH0912-10 Preliminary 10 Watts, 960-1215 MHz, 7 |is Pulse, 50% Duty Features • • • • • • • • • Outline Drawing Designed for JTIDS Applications NPN Silicon Microwave Power Transistor Common Base Configuration
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PH0912-10
SL42EDS
CC 1215
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microw ave Power Transistor . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, In the 0.96 to 1.215 GHz frequency range at high overall duty cycles. • Guaranteed Performance @ 1.215 GHz, 28 Vdc
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MRF10005
MRF10005
RF10005
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Long Pulse Power Transistor Designed for 9 6 0 -1 2 1 5 MHz long or short pulse common base amplifier applications such as JTIDS and M o de-S transmitters. • Guaranteed Performance @ 960 MHz. 36 Vdc
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MRF10031
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