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    JM 5600 Search Results

    JM 5600 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-88656-000 Renesas Electronics Corporation NON-INV 9 BIT REGISTER 54FCT823 Visit Renesas Electronics Corporation
    7MPV6356-000 Renesas Electronics Corporation SRAM MODULE Visit Renesas Electronics Corporation
    7MPV6256-000 Renesas Electronics Corporation SRAM MODULE Visit Renesas Electronics Corporation
    10126619-560012FLF Amphenol Communications Solutions HPCE R/A Receptacle 12S56P Visit Amphenol Communications Solutions
    66956-004 Amphenol Communications Solutions Dubox® 2.54mm, Board to Board Connector, PCB Mounted Receptacle, Vertical, Through Mount, Top Entry, Double Row, 8 Position ,2.54mm (0.100in) Pitch Visit Amphenol Communications Solutions
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    JM 5600 Price and Stock

    Vishay Intertechnologies TFPT0805L5600JM

    PTC Thermistors TFPT0805 560 5% ET1 e3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TFPT0805L5600JM
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    Wima DCP4G056007G2JMS00

    Film Capacitors DC-LINK MKP 4 60.0 uF 400 VDC 20x39.5x41.5 SN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DCP4G056007G2JMS00
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    Wima DCP4G056007G1JMS00

    Film Capacitors DC-LINK MKP 4 60.0 uF 400 VDC 20x39.5x41.5 SN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DCP4G056007G1JMS00
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    JM 5600 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ZLDQ250A

    Abstract: pwm INVERTER welder ZQ25A zldq150a ZQ50A st600c ZQ35A diode m3 3phase bridge diode mds 60 SKE200A
    Text: ZHEJIANG ZENLI RECTIFIER MANUFACTURE CO. , LTD Z L ZENLI RECTIFIER RECTIFIER Power Semiconductors >> Short Form Catalog Zenli Rectifier Manufacture CO.,LTD Head company: Zenli Industry Zone,75# Hengjingdongyi.RD, Fangdouyan,Liushi,Yueqing,Zhejiang,China TEL:86-577-62766513


    Original     		pinwei0225 ZLDQ250A pwm INVERTER welder ZQ25A zldq150a ZQ50A st600c ZQ35A diode m3 3phase bridge diode mds 60 SKE200A PDF

    amd 216-0674026

    Abstract: 216-0674026 amd 218s7ebla12fg KB926 SB710 KAV10 ALC269X APL5607 FBMA-L11-201209-221LMA30T ISL6251
    Text: A B C D E 1 1 Compal Confidential 2 2 NAL00 Schematics Document AMD L310/L110 Processor with RS780MN/SB710/M92-S2/S3 LP 2009-04-24 3 3 REV:0.2 4 4 2008/10/06 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification 2009/10/06 Deciphered Date


    Original     		NAL00 L310/L110 RS780MN/SB710/M92-S2/S3 A5401 50V8J 50V8J amd 216-0674026 216-0674026 amd 218s7ebla12fg KB926 SB710 KAV10 ALC269X APL5607 FBMA-L11-201209-221LMA30T ISL6251 PDF

    Johanson 5502

    Abstract: mechanical project Johanson 5200
    Text: 1 to 14 pF 1 to 20 pF 5402 5502 G6'&&C>p 4 &&& G6'&&C>p 4'+&& air capacitors 1 to 30 pF 8053 š 9WfWY_jWdY[HWd][0'$&je'&$&f<4 &jkhdi š Meha_d]LebjW][0(+&L:9+&&L:9J[ij š Jehgk[0'je+$&ep$?d$ š Jkd_d]Jeeb0.-,* š He>I9ecfb_Wdj


    Original     		PDF

    TRANSISTOR SD1444

    Abstract: AJ10 SD1444
    Text: H/IS c a n n i-*.*,inr»S IV U C rO S e m l P ro g re s s P o w e re d b y T ec h no log y 140 Commerce Drive •■ IVS I I LVj VJ ■ ■ IV* I J V I I IV> ; IPA n I V ■«/ Montgomeryville, 18936-1013 Tel: 215 631-9840 ^ _ . jm jm jm o U l 4 4 4 RF & MICROWAVE TRANSISTORS


    OCR Scan     		oU1444 450-512MHz 470MHz SD1444 M8SD144Ã SD1444 1000pf 3M-K6098. TRANSISTOR SD1444 AJ10 PDF

    S7508

    Abstract: 17S274K MS75088-13
    Text: GOWAIMDA R.F. SHIELDED CHOKES • Style. ’ T 10, Grade 1. Class A ■ Maxim jm O perating Tem perature: -55 t o +105 C * Mnxim jm T em perature Rise: 15°C a Am bie it T em perature: 90 C *1 D ielectric W ith sta n d in g V o lta g e i sea level : 1000 VRMS


    OCR Scan     		MIL-C-15305. 17S100K 17S120K 17S150K 17S180K 17S220K 17S270K 17S330K 17S390K 17S470K S7508 17S274K MS75088-13 PDF

    m 60 n 03 c10

    Abstract: No abstract text available
    Text: LSQ LARGE CAN TYPE ALUMINUM ELECTROLYTIC CAPACITORS * v $ S i ^ f t 8 5 0C i £ i i E i S 85°C Standard, Screw Terminal Type m FEATURES • 85°C3000B#rs1nPo Load Life : 85"C 3000 hours. SPECIFICATIONS f JM S i S 14 Items fi 6 I -40— b85°C -25— F85°C


    OCR Scan     		C3000B 120Hz) 0-50W 3-100W 160-450WV 733kg 33kg-cm 50Arms m 60 n 03 c10 PDF

    52N30

    Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
    Text: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70


    OCR Scan     		76N06-11 76N07-11 76N07-12 67N10 75N10 50N20 58N20 74N20 80N20 35N30 52N30 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50 PDF

    Untitled

    Abstract: No abstract text available
    Text: A S E A 03 BROüJN/ABB SEMICON IR Rückwärtsleitende Thyristoren Thyristor V drm V A A/°C A ft 10 ms 8,3 ms 10 ms Tv j =45°C tv jm A A A2s A2s 500 600 700 300 190 110 330 215 120 2850 2 700 CSR 146-05 i- Thyr. CSR 146-06 iCSR 146-07 i- Diode 500 600 700


    OCR Scan     		T47-10Ã PDF

    N76000

    Abstract: 0.5-um CMOS standard cell library
    Text: ASICs • CMOS Standard Cells •S ta n d a rd Specifications M N 73000 M N 76000 M N 7A 000 M N 7B 000 50,000 g a te s 70,000 g a te s 200,000 g a te s 400,000 g a te s Silicon g a te C M O S 1.5/rni S ilicon g a te C M O S 1.2/m i Silicon g a te C M O S 0.8/jm


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MULTILAYER CHIP CERAMIC CAPACITOR m m m rn Q M K • * rnmm, S Q t i, f lW * * « 1 M H Z - 3 G H Z iB I. * g j i ^ & m j w s * ru tto * « Ä Ö U ^ iitt in if^ t t, jM ^ ü lS t W n a W f f . * A ffi * K E S R , * m & m m u a tñ iim 0805 1 ® CQ ~r


    OCR Scan     		10x101 10x102 S30B3J PDF

    Untitled

    Abstract: No abstract text available
    Text: Hardware Tuning Tools SLOT TUNING TOOLS J M C P/N M O U N T IN G T H R E A D U N S -2 JOHAN SON 8777 / < JM C P/N 8777 = JOHANSON B 7 I2 r ] A P P L IC A T IO N r2 7 2 7 0 T .0 7 8 J 272 30 J-GIGA-TRIM S E R IE S D I A .I 272 3 0 j 1 5 801 M IN IA TU RE A IR S E R IE S


    OCR Scan     		FAX-201-334-2954 PDF

    sd 7406

    Abstract: CI 7407 MOLEX 3953 I-7107 39-53-4106 39512100 ck 66 ul94v-0 t 3301 nk CI008 26ag
    Text: 10 D 6 .0 6 1.2 7 ±0- □- K :* CODE:* (P IT C H ) LEAD FREE LEAD FREE LEAD FREE A - 9 & W t t x 7 - G2 t OANG E iê GOLD 0 .7 6 M m GREEN ifz GOLD 0 .2 5 p m St iê YELLO W GOLD G3 ( 1.2 7 ) m ’ CC-y?) G54 P 0 S I7 I0 N OF P A R 7 NO. P 0 S I7 I0 N OF 7 R A D E M ARK AND


    OCR Scan     		TIN-LRAD2502 5320-60AGS3 -50AGS3 -40AGS3 -34AGS3 -30AGS3 5320-IOAGS3 5320-NAGS3 5320-60AGÃ -50AGS sd 7406 CI 7407 MOLEX 3953 I-7107 39-53-4106 39512100 ck 66 ul94v-0 t 3301 nk CI008 26ag PDF

    PS 9829 m

    Abstract: Q559 int 6400 PS 9829 B
    Text: GO UL D S E M I C O N D U C T O R 4055916 GÖULD SEMICONDUCTOR D I V % pe. |. n »IV QBE D | MDSS^lt, D G l G a a D 0 J ~ 03E 10220 D Intelligent Slave Physical Interface Controller IPI-3 Electronics 7 ^ 5 5 '3 3 - /S' P r e lim in a r y D a ta S h e e t


    OCR Scan     		S61393 16-bit G0030 PS 9829 m Q559 int 6400 PS 9829 B PDF

    stk 412 -410 power amp

    Abstract: Truth Table 7485 2 bit comparator STK power amplifier 4301 STK 463 amplifier stk 5006 stk 411 5.1 Amp Block Diagram STK 435 power amplifier stk 496 630 stk 410 22 pin STK 4301
    Text: Æk A Vm J a Order Number IPC-16A/927 Publication Number 4200127X Preliminary NATIONAL The PACE Microprocessor A Logic Designer’s Guide to Program Equivalents of TTL Functions MARCH 1976 National Semiconductor Corporation 2900 Semiconductor Drive Santa Clara, California 95051


    OCR Scan     		IPC-16A/927 4200127X stk 412 -410 power amp Truth Table 7485 2 bit comparator STK power amplifier 4301 STK 463 amplifier stk 5006 stk 411 5.1 Amp Block Diagram STK 435 power amplifier stk 496 630 stk 410 22 pin STK 4301 PDF

    U860 diode

    Abstract: diode U860 diode avalanche DSA U860 tc 40138 DIODE DSA 18 diode avalanche DSA VRRM 2300 DSA VRRM 2300 G DSA 908-44 A G diode avalanche DSA 603
    Text: A S E A b Ro u n /abb AB seuicon D I 00MÛ3DÛ □OGOlhl 7 * T -o \- Netzdioden Vrrm 1 Diode I 1 DS Ki DSA 1 1 T yp /type 1 I I Rectifier diodes S21 - I I 1 I FAV1 400-11 KC, NC 400-14 KC, NC 400-17 KC, NC 400-20 KC, NC 400-23 KC.NC ft If s m If a v m A °C A


    OCR Scan     		00Mfl3Dfl To-50Â 400-11KC, D2950 U860 diode diode U860 diode avalanche DSA U860 tc 40138 DIODE DSA 18 diode avalanche DSA VRRM 2300 DSA VRRM 2300 G DSA 908-44 A G diode avalanche DSA 603 PDF

    OP07SAJ5

    Abstract: pmi op07 OP07SZ JM38510/01405BEA
    Text: JM38510/13501/13502 ,EmD ULTRA-LOW OFFSET VOLTAGE OPERATIONAL AMPLIFIERS I Precision M onolithics Inc have identical operational performance characteristics across the military temperature range or reliability factors equivalent to the MIL-M-38ii10 device.


    OCR Scan     		JM38510/13501/13502 510/13501BGC JM38510/13501BGA JM38510/13501SGA JM38510/13501BPB JM38510/13501B JM38510/13501 JM38510/13502BGC 510/13502BG JM38510/13502SGA OP07SAJ5 pmi op07 OP07SZ JM38510/01405BEA PDF

    d 151811

    Abstract: 40669 DSD 1028-25 A diode avalanche DSA dsa 1508 diode avalanche DSA VRRM 2300 abb diode YSD CH-4UH dsa 1208 DSA 135
    Text: S E MI COND UC TORS AG rrm Ifavm O o &> V f Type O rdering num ber Bestellnum m er Num. de com m ande □ ODl hfi Bfi OOOQOaq □ B A B B DSA Avalanche-Dioden 1 DSA Avalanche Diodes 3flE D o A B B Tc A V DSA l 403-38.50 GG, L1G 3800.5000 1040 Tf 5M V = 100°C 8,3 m s 10 m s


    OCR Scan     		0n0n02Â HEKSV-403GG-831 HEKSV-503GE-831 HEKSV-603GC-831 GDG0Q31 d 151811 40669 DSD 1028-25 A diode avalanche DSA dsa 1508 diode avalanche DSA VRRM 2300 abb diode YSD CH-4UH dsa 1208 DSA 135 PDF

    AR2414

    Abstract: AR2413
    Text: IN TE G R A TE D CIRCUITS EMTA S&flEET TE A1205AT High efficiency DC/DC converter P relim inary specification File under Integrated C ircuits, IC03 Philips Semiconductors 1998 M ar 24 PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification High efficiency D C /D C c o n v e rte r


    OCR Scan     		A1205AT TEA1205AT AR2414 AR2413 PDF

    PDI-68RV

    Abstract: t127a
    Text: P/N PDI-26RV PDI-50RV PDI-68RV A 19.06 34.30 45.73 B 31.26 46.50 57.93 D 24.86 40.10 51.53 C 37.51 52.75 64.18 E 15.24 30.48 41.91 iì F 27.56 42.80 54.23 G 33.68 48.92 60.35 MATERIAL AND FINISH: Insulator: PBT, glass filled, UL 94V-0 rated, color black Contact: Phosphor bronze, Gold flash on mating area, 100|jin Tin on solder


    OCR Scan     		PDI-26RV PDI-50RV PDI-68RV 500VDC 500VAC 000000000000c PART26, t127a PDF

    MRF 5600

    Abstract: RFMT-56 jm 5600
    Text: ✓mRF Prime FT W Microwave <rf A N SCC HTTP://www.rfprime.com BLUE CELL MIXER COMPANY D a ta S h e e t Surface Mount Mixer 4400-6000 MHz RFM T-56 The RFMT-56 is a low level high frequency mixer, implemented using the patented BLUE CELL process. These devices are broad band and have low conversion loss performance. The low


    OCR Scan     		RFMT-56 RFMT-56-SM2 ED0028 RFMT-56-SM2 MRF 5600 jm 5600 PDF

    2SC4532

    Abstract: No abstract text available
    Text: 2SC4532 SILICON NPN TRIPLE DIFFUSED MESA TYPE TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS. Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY. 20.5 MAX HIGH SPEED SWITCHING APPLICATIONS. . High Voltage J# 3.3 ±0.2 : VcBO — 1700V . Fast Switching Speed. Resistive Load tf=0. l(Js(Typ.)


    OCR Scan     		2SC4532 2SC4532 PDF

    Untitled

    Abstract: No abstract text available
    Text: BX DIELECTRIC BX dielectric characteristics are identical to X7R dielectric, except for the added restriction that the TemperatureVoltage Coefficient TVC is not to exceed -25% AC at rated voltage, over the operating temperature range (-55°C to 125°C). NOVACAP manufactures chips using dielectrics with minimal voltage coefficient and layer


    OCR Scan     		MIL-C-55681, MIL-C-123, PDF

    la 78042

    Abstract: uPI Semiconductor Corp western 142c 4SH 0202 K 176 LE, K 561 LN UCS-51 a295 ac hen nsd
    Text: in te r APPLICATION BRIEF AB-41 Septem ber 1988 lntel C o rp o ra tio n m akes no w a rranty for the use o f its p ro d u c ts and assurnes no responsibility fo r any erro rs w hich m ay app ear in th is d o c u m e n t nor d o e s it m a k e a c o m m itm e n t to u p d a te the in fo rm a tio n c o n ta in e d herein


    OCR Scan     		AB-41 696GGG la 78042 uPI Semiconductor Corp western 142c 4SH 0202 K 176 LE, K 561 LN UCS-51 a295 ac hen nsd PDF

    MOSFET D25

    Abstract: No abstract text available
    Text: VMM 15-045 VMM 15-05 Dual Power MOSFET Modules DSS D25 R DS on = 450/500 V = 20 A = 0.2 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS T d = 25°C to 150°C VMM 15-045 VMM 15-05 450 500 V V v DGR T,J = 25°C to 150°C; FL. = 2 0 k i2 Cab VMM 15-045


    OCR Scan     		4bflb22b D00221B MOSFET D25 PDF