Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    JEDEC MO-187 AA Search Results

    JEDEC MO-187 AA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP139AIYAHR Texas Instruments JEDEC DDR5 temperature sensor with 0.5 °C accuracy 6-DSBGA -40 to 125 Visit Texas Instruments Buy
    SN74SSQEA32882ZALR Texas Instruments JEDEC SSTE32882 Compliant 28-Bit to 56-Bit Registered Buffer with Address-Parity Test 176-NFBGA 0 to 85 Visit Texas Instruments Buy
    SN74SSQE32882ZALR Texas Instruments JEDEC SSTE32882 Compliant 28-Bit to 56-Bit Registered Buffer with Address-Parity Test 176-NFBGA 0 to 85 Visit Texas Instruments
    SN74SSQEB32882ZALR Texas Instruments JEDEC SSTE32882 Compliant 28-Bit to 56-Bit Registered Buffer with Address-Parity Test 176-NFBGA 0 to 85 Visit Texas Instruments Buy
    SN74SSQEC32882ZALR Texas Instruments JEDEC SSTE32882 Compliant Low Power 28-Bit to 56-Bit Registered Buffer with Address-Parity Test 176-NFBGA 0 to 85 Visit Texas Instruments Buy

    JEDEC MO-187 AA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MO-187-AA Package

    Abstract: JEDEC MO-187 MO-187-AA MO-187
    Text: 8-Lead Mini Small Outline Package [MSOP] RM-8 Dimensions shown in millimeters a 3.20 3.00 2.80 8 3.20 3.00 2.80 1 PIN 1 5.15 4.90 4.65 4 0.65 BSC 0.95 0.85 0.75 0.15 0.00 5 1.10 MAX 0.38 0.22 COPLANARITY 0.10 SEATING PLANE 0.23 0.08 8° 0° COMPLIANT TO JEDEC STANDARDS MO-187-AA


    Original     		PDF MO-187-AA MO-187-AA Package JEDEC MO-187 MO-187-AA MO-187

    ansi-y14.5m-1994

    Abstract: MO-187
    Text: Package Information Vishay Siliconix MSOP: 8-LEADS POWER IC ONLY JEDEC Part Number: MO-187, (Variation AA and BA) (N/2) Tips) 2X 5 N N-1 A B C 0.20 0.60 0.48 Max Detail “B” (Scale: 30/1) Dambar Protrusion E 0.50 1 2 0.60 N/2 0.08 M C B S b Top View A S


    Original     		PDF MO-187, 28-Jan-04 S-40080--Rev. 02-Feb-04 ansi-y14.5m-1994 MO-187

    5922

    Abstract: 72817 ansi-y14.5m-1994 MO-187 JEDEC MO-187 aa MO-187-AA Package
    Text: Package Information Vishay Siliconix MSOP: 10-LEADS POWER IC ONLY JEDEC Part Number: MO-187, (Variation AA and BA) (N/2) Tips) 2X 5 N N-1 A B C 0.20 0.60 0.48 Max Detail “B” (Scale: 30/1) Dambar Protrusion E 0.50 1 2 0.60 N/2 0.08 M C B S b Top View


    Original     		PDF 10-LEADS MO-187, 28-Jan-04 S-40082--Rev. 02-Feb-04 5922 72817 ansi-y14.5m-1994 MO-187 JEDEC MO-187 aa MO-187-AA Package

    5867

    Abstract: 71244 ansi-y14.5m-1994 MO-187 JEDEC MO-187 ba JEDEC MO-187 Variation BA mo187 MO-187-AA Package
    Text: Package Information Vishay Siliconix MSOP: 8−LEADS JEDEC Part Number: MO-187, Variation AA and BA (N/2) Tips) 2X 5 A B C 0.20 N N-1 0.60 0.48 Max Detail “B” (Scale: 30/1) Dambar Protrusion E 1 2 0.50 N/2 0.60 0.08 M C B S b A S 7 Top View b1 e1 With Plating


    Original     		PDF MO-187, 012imension: T-02080--Rev. 15-Jul-02 12-Jul-02 5867 71244 ansi-y14.5m-1994 MO-187 JEDEC MO-187 ba JEDEC MO-187 Variation BA mo187 MO-187-AA Package

    ansi-y14.5m-1994

    Abstract: MO-187 10-LEADS JEDEC MO-187 Variation BA B.A BSc
    Text: Package Information Vishay Siliconix MSOP: 10−LEADS JEDEC Part Number: MO-187, Variation AA and BA (N/2) Tips) 2X 5 A B C 0.20 N N-1 0.60 0.48 Max Detail “B” (Scale: 30/1) Dambar Protrusion E 1 2 0.50 N/2 0.60 0.08 M C B S b A S 7 Top View b1 e1 With Plating


    Original     		PDF 10-LEADS MO-187, 12-Jul-02 T-02080--Rev. 15-Jul-02 ansi-y14.5m-1994 MO-187 10-LEADS JEDEC MO-187 Variation BA B.A BSc

    TLV2252

    Abstract: TLV2252AID TLV2254 TLV2432 TLV2442
    Text: TLV225x, TLV225xA Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER OPERATIONAL AMPLIFIERS SLOS185C – FEBRUARY 1997 – REVISED – MARCH 2001 D D D D D D Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz Low Input Bias Current . . . 1 pA Typ


    Original     		PDF TLV225x, TLV225xA SLOS185C TLV2252 TLV2252AID TLV2254 TLV2432 TLV2442

    DDR2-400

    Abstract: DDR2-533 DDR2-667 MO-224 MT16HTS25664HY-667 PC2-3200 PC25300 MT47H128M8BT HTS16C256 mt47
    Text: 2GB: x64, DR 200-Pin DDR2 SDRAM SODIMM Features DDR2 SDRAM SODIMM MT16HTS25664H – 2GB For component specifications, refer to Micron’s Web site: www.micron.com/products/ddr2sdram Features Figure 1: • 200-pin, small outline, dual in-line memory module


    Original     		PDF 200-Pin MT16HTS25664H 200-pin, PC2-3200, PC2-4200, PC25300 18-compatible) 09005aef821e5bf3/Source: 09005aef82198d54 HTS16C256x64H DDR2-400 DDR2-533 DDR2-667 MO-224 MT16HTS25664HY-667 PC2-3200 PC25300 MT47H128M8BT HTS16C256 mt47

    Untitled

    Abstract: No abstract text available
    Text: 0: 30 PM PM8355 QuadPHY II Datasheet Released Mo nd ay ,0 QuadPHY® II 9M ay ,2 00 5 11 :3 PM8355 d of ag er rt on Four Channel 2.125-3.125 Gbits/s SERDES by sa tis h Datasheet Do wn lo ad ed Proprietary and Confidential Released Issue 7: June 2003 Proprietary and Confidential to PMC-Sierra, Inc., and for its Customers’ Internal Use


    Original     		PDF PM8355 PMC-2000920, PM8355 PMC-2000920 US6316977 US6552619 17x17

    Untitled

    Abstract: No abstract text available
    Text: 9: 07 PM PM8355 QuadPHY II Datasheet Released ug Mo nd ay ,0 1A QuadPHY® II us t, 20 05 10 :1 PM8355 rtm in er In co n Four Channel 2.125-3.125 Gbits/s SERDES Proprietary and Confidential Released Issue 8: July 2005 Do wn lo ad ed by C on te n tT ea m of


    Original     		PDF PM8355 PMC-2000920, PM8355 MO-205, 17x17

    minidimm

    Abstract: DDR2-400 DDR2-533 DDR2-667 PC2-3200 PC2-5300
    Text: 1GB: x72, DR 244-Pin DDR2 VLP Reg. MiniDIMM Features DDR2 VLP Registered MiniDIMM MT18HVS12872(P)K – 1GB For component specifications, refer to Micron’s Web site: www.micron.com/products/ddr2sdram Features Figure 1: • 244-pin, very low profile mini dual in-line memory


    Original     		PDF 244-Pin MT18HVS12872 244-pin, PC2-3200, PC2-4200, PC2-5300 18-compatible) 09005aef81c9620b/Source: 09005aef81c961ec HVS18C64 minidimm DDR2-400 DDR2-533 DDR2-667 PC2-3200 PC2-5300

    Untitled

    Abstract: No abstract text available
    Text: PM4328 TECT3 STANDARD PRODUCT DATASHEET ISSUE 1 HIGH DENSITY T1/E1 FRAMER AND M13 MULTIPLEXER :3 5: 17 AM PMC-2011596 ep 2S Mo nd ay ,2 TECT3 te m be r, 20 03 07 PM4328 DATASHEET PROPRIETARY AND CONFIDENTIAL ISSUE 1: AUGUST 2001 Do wn lo ad ed by Co nt en


    Original     		PDF PM4328 PMC-2011596 PM4328 PMC-2011596 PMC-2011465

    minidimm

    Abstract: No abstract text available
    Text: 256MB, 512MB: x72, SR 244-Pin DDR2 Reg. MiniDIMM Features DDR2 SDRAM Registered MiniDIMM MT9HTF3272(P)K – 256MB MT9HTF6472(P)K – 512MB For component specifications, refer to Micron’s Web site: www.micron.com/products/ddr2sdram Features Figure 1: • 244-pin, mini dual in-line memory module


    Original     		PDF 256MB, 512MB: 244-Pin MT9HTF3272 256MB MT9HTF6472 512MB 244-pin, PC2-3200, PC2-4200, minidimm

    MT36HTS1G72FY667A1D4

    Abstract: RE87 E40002
    Text: 8GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features DDR2 SDRAM FBDIMM MT36HTS1G72F – 8GB For the latest data sheet, refer to Micron’s Web site: www.micron.com Features Figure 1: • 240-pin DDR2 fully buffered dual in-line memory module (FBDIMM) • Fast data transfer rates: PC2-4200 and PC2-5300


    Original     		PDF 240-Pin MT36HTS1G72F PC2-4200 PC2-5300 09005aef82ba0f01/source: 09005aef82ba0e26 HTS36C1Gx72F MT36HTS1G72FY667A1D4 RE87 E40002

    MV-S100649-00

    Abstract: Marvell 88e1111 register map Marvell PHY 88E1111 Marvell PHY 88E1111 application note 88E1111 88E1111 PHY registers map marvel phy 88e1111 reference design Marvell 88E1111 application note 88E1111 full Marvell 88E1111
    Text: 7v u3 M 1z AR zf VE nu LL a-e CO 468 NF 1d ID ge EN * M 7v TI ar u3 AL ve M 1z , U ll S AR zf ND em VE nu ER ic LL a-e NDond CO 468 A# uc NF 1d 02 tor, ID ge EN * M 13 In 03 c. TI ar AL ve , U ll S ND em ER ic NDond A# uc 02 tor, 13 In 03 c. MARVELL CONFIDENTIAL


    Original     		PDF 88E1111 MV-S100649-00, 7vu31zzfnua-e4681dge MV-S100649-00 Marvell 88e1111 register map Marvell PHY 88E1111 Marvell PHY 88E1111 application note 88E1111 PHY registers map marvel phy 88e1111 reference design Marvell 88E1111 application note 88E1111 full Marvell 88E1111

    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


    OCR Scan     		PDF AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175

    MO-187

    Abstract: R005 JEDEC MO-187
    Text: R E V I S I O N S REV A D E S C R 1P T I O N RELEASE TO DOC U ME NT E.C. M . DATE BY/APP'D 1262 11/18/2003 H R//TLSN CONTROL [ 1 . 85] 8X .040 — [ 1.02] ( 8X .016 ) [ 0 . 41] ( 6X .026 ) [0.65] RECOMMENDED LAND PATTERN NOTES: UNLESS OTHERWI SE SPECIFIED


    OCR Scan     		PDF MO-187, MO-187 R005 JEDEC MO-187

    MO-187-AA-T Package

    Abstract: No abstract text available
    Text: Preliminary data HiPerFAST IGBT IXGK80N60A 600 V 80 A 2.7 V 275 ns VCES IC25 V CE sat % Symbol TestC onditions v CES Tj = 25°C to 150 °C 600 V VCGR T j = 25°C to 150°C; RGE = 1 MO 600 V V GES Continuous ±20 V V 3 EM Transient ±30 V T c = 25°C, limited by leads


    OCR Scan     		PDF IXGK80N60A 1J047 MO-187-AA-T Package

    G 50N60

    Abstract: 50N60 igbt 100a 50n50 IXGH50N60B
    Text: HiPerFAST IGBT with Diode V V CES IXGK 50N50BU1 IXGK 50N60BU1 ^C 2 5 500 V 75 A 600 V 75 A ^ C E s a t 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Test Conditions Maximum Ratings 50N50 vCES V C GR VGES VGEM 'c o ' cm 50N60 Tj = 25°C to 150°C


    OCR Scan     		PDF 50N50BU1 50N60BU1 100ns 120ns 50N50 50N60 O-264 G 50N60 igbt 100a IXGH50N60B

    TSMA13A

    Abstract: sm41 BRIDGE-RECTIFIER 10v 1A bq 738 TSMA39A TSMA9.1A TSMA10 TSMA10A TSMA11 TSMA11A
    Text: GENL IN S T R / 3fiE II • POIilER 3810137 000m,=il 1 HlSIC T-//-23 « » « P *R ♦E * L* I* IVI • I * N ♦ A *R ♦ Y ♦ ♦ * ♦ ♦ ♦ TSMA SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 - 200 Volts % FEATURES ♦ For surface mounted applications


    OCR Scan     		PDF 04bcll SMA/DO-214AC TSMA13A sm41 BRIDGE-RECTIFIER 10v 1A bq 738 TSMA39A TSMA9.1A TSMA10 TSMA10A TSMA11 TSMA11A

    FEPROM

    Abstract: YL41 10B60 LM 10841 7v71 10B28 U131-1-2
    Text: PRELIM INARY VF1 FPGA Family B EY O N D P ER F O R M A N C E FEATURES AND BENEFITS ♦ The industry’s first Variable-Grain-Architecture enables high-density, high-performance designs for a wide range of applications — Architecture adapts to logic to enable synthesis-friendly, high-performance designs


    OCR Scan     		PDF leng0B96 IOB97 IOB98 IOB99 10B100 10B101 IOB102 10B103 10B104 10B105 FEPROM YL41 10B60 LM 10841 7v71 10B28 U131-1-2

    DS040

    Abstract: l6232
    Text: PRELIMINARY VF1 FPGA Family BEY O N D PER FO RM AN C E FEATURES AND BENEFITS P u b lic atio n # V F 1003-D S-1 A m en d m en t/O Issu e D ate: N o v e m b e r 1 9 9 8 VF1 FPGA Family ♦ The industry's first Variable-Grain-Architecture enables high-density, high-performance


    OCR Scan     		PDF IOB139 IOB140 IOB141 IOB142 IOB143 IOB144 IOB102 IOB103 IOB104 IOB105 DS040 l6232

    2u20 diode

    Abstract: 2U39 diode 1N4C07 IN6016 IN4688 1N4C03 1N4C02 HRG1000 1N1989B 1N218
    Text: CODI Semiconductor, Inc m PRODUCT CATALOG Serving the Industry for over 25 years. SILICON DIODES • • • • • • • Zener and avalanche regulator diodes Temperature compensated zener reference diodes Forward regulator diodes Low leakage diodes Voltage variable capacitors


    OCR Scan     		PDF 1-800-232-CODI 1N6003B 1N6004B 1N6005B 1N6006B 1N6007B 1N6008B 1N6009B 1N6010B 1N6011B 2u20 diode 2U39 diode 1N4C07 IN6016 IN4688 1N4C03 1N4C02 HRG1000 1N1989B 1N218

    TFB2022A

    Abstract: No abstract text available
    Text: TFB2002B FUTUREBUS+ I/O CONTROLLER ^ _ S L L S 1 6 8 A - J A N U A R Y 1 9 9 2 - R E V IS E D M A R C H 1 9 9 4 • Provides Control Logic Necessary to Operate a Data Path Unit TFB2022A on Futurebus+ • Provides Full Support for Futurebus+


    OCR Scan     		PDF TFB2002B TFB2022A) R4000, 680x0 88xxx, 80x86, I43LK IPI04LK OPI43LK TFB2022A

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


    OCR Scan     		PDF 20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09