JCA Technology
Abstract: jca amplifier JCA Technology jca-23 JCA Technology low noise amplifier RS032100 dc power connector JCA Technology JCA
Text: JCA Technology Products Ultra-Low Noise Telemetry Band Amplifier Go to New Focus web site! JCA Technology's Ultra-Low noise telemetry band amplifier is one of the many new products developed under the Discrete Amplifier Division. This division addresses components that are not practical to thin film technology or components that require
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RS032100
JCA Technology
jca amplifier
JCA Technology jca-23
JCA Technology low noise amplifier
RS032100
dc power connector
JCA Technology JCA
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JCA Technology
Abstract: LA26-401 la1218 La4840 LA28-501 LA24-401 LA618-701 LA712-501 LA818-701
Text: JCA Technology Products Limiting Amplifiers Medium Band from 0.5 GHz to 18 GHz Go to New Focus web site! Features: ● Wide input dynamic range Compressed output range ● Fast pulse response in saturated mode ● Wideband coverage from 0.5GHz to 18GHz ●
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18GHz
LA02-401
LA24-401
LA26-401
LA28-501
LA48-401
LA712-501
LA618-701
LA818-701
LA1218-701
JCA Technology
LA26-401
la1218
La4840
LA28-501
LA24-401
LA618-701
LA712-501
LA818-701
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JCA Technology
Abstract: JCA001-205 JCA003-201 JCA006-201 JCA001-203 JCA001-201 JCA001-202 JCA001-204 JCA002-201 JCA002-202
Text: JCA Technology Products Go to New Focus web site! 10 Mhz to 18 Ghz Ultra-Broadband Amplifiers for Fiber-Optic and Telecommunications Features: ● Ideal for Fiber-Optic, Telecommunications, and Test Equipment ● Drop-In Style Packages ● Multi-Octave Operation
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15VDC
JCA001-201
JCA001-202
JCA001-203
JCA006-201
JCA006-202
JCA006-203
JCA006-204
JCA006-205
JCA Technology
JCA001-205
JCA003-201
JCA001-204
JCA002-201
JCA002-202
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JCA Technology low noise amplifier
Abstract: JCA Technology jca amplifier LA910-4000 x-band limiter X-band low noise amplifiers JCA Technology JCA x band radar x-Band High Power Amplifier x-band amplifiers
Text: JCA Technology Products 2 Watt X-Band Power Amplifier Go to New Focus web site! Features: ● ● High Reliability 2-Watts Linear Output Power ● Low Phase Noise Unconditionally Stable Competitively Priced ● Quick Delivery ● ● Model No - LA910-4000
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LA910-4000
JCA Technology low noise amplifier
JCA Technology
jca amplifier
LA910-4000
x-band limiter
X-band low noise amplifiers
JCA Technology JCA
x band radar
x-Band High Power Amplifier
x-band amplifiers
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JCA Technology
Abstract: 001-120 JCA0018-205 JCA007-205 JCA008-201 JCA0010-201 JCA0010-303 JCA0012-302 JCA0010-202 JCA007-201
Text: JCA Technology Products Go to New Focus web site! 10 Mhz to 18 Ghz Ultra-Broadband Amplifiers for Fiber-Optic and Telecommunications Features: ● Ideal for Fiber-Optic, Telecommunications, and Test Equipment ● Drop-In Style Packages ● Multi-Octave Operation
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15VDC
JCA008-203
JCA0016-203
JCA0016-204
JCA0016-205
JCA0018-201
JCA0018-202
JCA0018-203
JCA0018-204
JCA0018-205
JCA Technology
001-120
JCA007-205
JCA008-201
JCA0010-201
JCA0010-303
JCA0012-302
JCA0010-202
JCA007-201
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JCA Technology
Abstract: LA02-801 LA7121 LA26-801 jca amplifier la1218 LA24-801 LA618-1401 LA818-1401 LA1218-1401
Text: JCA Technology Products Limiting Amplifiers High Band from 0.5 GHz to 18 GHz Go to New Focus web site! Features: ● Wide input dynamic range Compressed output range Fast pulse response in saturated mode Wideband coverage from 0.5GHz to 18GHz ● Special package configuration to meet customer requirements
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18GHz
LA02-801
LA24-801
LA26-801
LA28-1001
LA48-801
LA712-1001
LA618-1401
LA818-1401
LA1218-1401
JCA Technology
LA02-801
LA7121
LA26-801
jca amplifier
la1218
LA24-801
LA618-1401
LA818-1401
LA1218-1401
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Transistor BFX 59
Abstract: BFX59F BFX59 kbr 1000 Q60206-X transistor BFX59 transistor w 04 59 Transistor BFX 4
Text: BFX 59 F NPN Transistor for driver and output stages in antenna amplifiers BFX 59 F is an epitaxial N P N silicon planar RF transistor in a case 18 A 4 D IN 41 876 TO-72 . The leads are electrically insulated from the case. B FX 59 F is suitable for use in low-power driver and output stages up to the U H F range, especially at a higher
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Q60206-X
Transistor BFX 59
BFX59F
BFX59
kbr 1000
transistor BFX59
transistor w 04 59
Transistor BFX 4
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BF 184 transistor
Abstract: BF457 bf459 IC 41 BF transistors 458
Text: BF 457 BF 458 SILICON P LA N A R NPIN BF 459 PRELIMINARY DATA HIGH VOLTAGE VIDEO AMPLIFIERS The BF: 457, BF 458 and BF 459 are silicon planar epitaxial NPN transistors in Jedec T O -1 26 plastic package. They are particularly intended fo r use as video o u tp u t stages in
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O-126
i300V,
BF 184 transistor
BF457
bf459
IC 41 BF
transistors 458
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Untitled
Abstract: No abstract text available
Text: nil TetraFET Vrrr = mi D1006UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1 2 0 W -2 8 V -1 7 5 M H z SINGLE ENDED FEATURES u • SIMPLIFIED AMPLIFIER DESIGN Q N K w O P • SUITABLE FOR BROAD BAND APPLICATIONS
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D1006UK
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BFR18
Abstract: jca amplifier
Text: BFR18 SILICON PLANAR NPN H IG H -VO LTA G E , H IG H -C U R R E N T A M PLIFIER The BFR 18 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. This device is designed for amplifier applications over a wide range of voltage and current.
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BFR18
BFR18
20MHz
300jus,
jca amplifier
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Untitled
Abstract: No abstract text available
Text: WJ-EA7 5 to 250 MHz TO-5 CASCADABLE AMPLIFIER ♦ HIGH OUTPUT LEVEL: +16 dBm TYP ♦ LOW OUTPUT VSWR: 1.5:1 (TYP) ♦ WIDE SUPPLY RANGE: 12 TO 15 VOLTS Specifications’1 Outline Drawings Guaranteed 0° to +50°C -54° to +85°C Typical Characteristics Frequency (Min.)
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50-ohm
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BFX48
Abstract: No abstract text available
Text: BFX48 SILICON PLANAR PNP H IGH-FREQUENCY AMPLIFIER The BFX 48 is a silicon planar epitaxial PNP transistor in Jedec T O -1 8 metal case. It is suitable fo r a wide range o f applications including lo w noise, low current high gain RF and wide band pulse am plifiers.
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BFX48
BFX48
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bd139
Abstract: M/triac bd139 bd135
Text: BD135 BD139 NPN SILICON TRANSISTORS • STMicraelectronics PREFERRED SALESTYPES DESCRIPTION The BD135 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi
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BD135
BD139
BD135
BD139
OT-32
BD136
BD140
BD135/
M/triac bd139
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2N 930
Abstract: No abstract text available
Text: 2N 930 SILICON PLANAR NPN LOW-LEVEL, LOW-NOISE AMPLIFIER The 2N 9 3 0 is a silic o n planar e p ita x ia l NPN tra n sisto r in Jedec T O -1 8 m etal case, designed fo r use in high p e rfo rm a n ce , lo w -le v e l, lo w -n o is e a m p lifie r app lica tio n s.
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10AIA
6x10-'
300/Lis,
2N 930
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Untitled
Abstract: No abstract text available
Text: Æ T SGS-THOMSON n lsi S IIL[iCTISÎ iD©S 2N3019 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 is a silicon planar epitaxial NPN transistors in JedecT O -39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation
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2N3019
2N3019
P008B
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BDY90P
Abstract: electronic ballast schematic transistor bI 240
Text: BDY90P NPN SILICON POWER TRANSISTOR . LOW COLLECTOR EMITTER SATURATION VOLTAGE . FAST-SWITCHING SPEED APPLICATION . GENERAL PURPOSE SWITCHING APPLICATIONS . GENERAL PURPOSE AMPLIFIERS . DC CURRENT AND BATTERY OPERATED ELECTRONIC BALLAST DESCRIPTION The BDY90P is a silicon Multiepitaxial Planar
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BDY90P
O-220
electronic ballast schematic
transistor bI 240
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Transistor D 2494
Abstract: WJ-A80-1 JCA 812
Text: WJ-A80-1/SMA80-1 10 to 200 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH REVERSE ISOLATION: >32 dB TYP. VERY LOW NOISE: 2.0 dB (TYP.) HIGH GAIN: 27.3 dB (TYP.) HIGH EFFICIENCY: 29 mA at 15 VOLTS (TYP.) Outline Drawings
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WJ-A80-1/SMA80-1
A80-1
50-ohm
J-A80-1
Transistor D 2494
WJ-A80-1
JCA 812
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Untitled
Abstract: No abstract text available
Text: Æ T S G S - T H O M S O N B F W 43 n lsi S IIL[iCTISÎ iD©S HIGH VOLTAGE AMPLIFIER DESCRIPTION The BFW43 is a silicon planar epitaxial PNP transistors in Jedec TO-18 metal case. It is designed for use in amplifiers where high voltage and high gain are necessary. In particular, its
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BFW43
BFW43
-3139M
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bc141
Abstract: No abstract text available
Text: Æ T SG S-TH O M SO N D lsi S IIL[lCTIs! iD©S BC141 GENERAL PURPOSE TRANSISTORS DESCRIPTION The BC141 is a silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are particularly designed for audio amplifiers and switching application up to 1A.
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BC141
BC141
BC161.
G-1072
P008B
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Untitled
Abstract: No abstract text available
Text: Æ T SGS-THOMSON n lsi S IIL[iCTISÎ iD©S BFY50/51 MEDIUM POWER AMPLIFIER DESCRIPTION The BFY50 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. INTERNAL SCHEMATIC DIAGRAM
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BFY50/51
BFY50
BFY52
BFY50
BFY51
BFY50/BFY51
P008B
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bc177
Abstract: No abstract text available
Text: Æ T SGS-THOMSON n lsi S IIL[iCTISÎ iD©S BC177 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC177 is a silicon planar epitaxial PNP transistors in TO-18 metal case. It is suitable for use in driver stages, low noise input stages and signal processing circuits of television reveivers.
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BC177
BC177
BC107.
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Untitled
Abstract: No abstract text available
Text: Æ T SGS-THOMSON n lsi S IIL[iCTIsî iD©S 2N4033 GENERAL PURPOSE AMPLIFIER AND SWITCH DESCRIPTION The 2N4033 is a silicon planar epitaxial PNP transistors in Jedec TO-39 metal case primary intended for large signal, low noise industrial applications. INTERNAL SCHEMATIC DIAGRAM
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2N4033
2N4033
P008B
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L165
Abstract: operational amplifier l165
Text: rz7 ^ 7 # SCS-THOMSON s ¡L IO T @ [* S L165 3A POWER OPERATIONAL AMPLIFIER • OUTPUT CURRENT UP TO 3A ■ LARGE COM MON-MODE AND TIAL MODE RANGES ■ SOA PROTECTION ■ THERMAL PROTECTION ■ ± 18V SUPPLY DIFFEREN The L165 is a monolithic integrated circuit in Pentawatt package, intended for use as power ope
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WJ-A33
Abstract: No abstract text available
Text: WJ-A33-1 /SMA33-1 2 to 2400 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ ULTRAWIDE BANDWIDTH: 1 - 2600 MHz TYP. ♦ MEDIUM OUTPUT LEVEL: +6 dBm (TYP.) Outline Drawings Specifications* A 3 3 -1 0.200 [5.08) Guaranteed Typical Characteristics
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WJ-A33-1
/SMA33-1
50-ohm
J-A33-1
000703b
WJ-A33
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