marking JC
Abstract: BAV23S marking sot23 marking JB sot23 jb SOT23 MARKING JC BAV23S JB SOT23 E2- marking marking JB sot23
Text: SEMICONDUCTOR BAV23S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking JC 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark JC BAV23S - - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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BAV23S
OT-23
marking JC
BAV23S marking
sot23 marking JB
sot23 jb
SOT23 MARKING JC
BAV23S
JB SOT23
E2- marking
marking JB sot23
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BAL74
Abstract: SOT23 BAL74 BAR74 sot23 jb DSA003668 50V 0.2uF 02uF
Text: SOT23 HIGH SPEED SWITCHING DIODES BAL74 BAR74 BAL74 BAR74 ISSUE 3 FEBRUARY 1997 PIN CONFIGURATION Circuit For Measuring Switching Time IF=10mA ! 0mA Irr VIN VOUT IR=10mA 1kΩ PARTMARKING DETAILS BAL74 JC BAR74 JB 0.1µF +11V Trr2 2 1 0.2µF BAL74
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BAL74
BAR74
100ns
100mA
BAL74
SOT23 BAL74
BAR74
sot23 jb
DSA003668
50V 0.2uF
02uF
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marking JC diode
Abstract: No abstract text available
Text: 1SV3401 SILICON EPITAXIAL PLANAR DIODE Band Switching Diode For VHF band switching applications 3 2 1 Marking Code: JC SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Reverse Voltage VR 35 V Forward Power Dissipation
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1SV3401
OT-23
marking JC diode
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code jc
Abstract: marking JC diode marking JC marking code JC JC MARKING SOT-23 marking 724 diode jc marking code sot23
Text: 1SV3401 SILICON EPITAXIAL PLANAR DIODE Band Switching Diode For VHF band switching applications 3 2 1 Marking Code: JC SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Reverse Voltage VR 35 V Forward Power Dissipation
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1SV3401
OT-23
code jc
marking JC diode
marking JC
marking code JC
JC MARKING SOT-23
marking 724 diode
jc marking code sot23
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Untitled
Abstract: No abstract text available
Text: LM3410 www.ti.com SNVS541F – OCTOBER 2007 – REVISED AUGUST 2010 LM3410/LM3410Q 525kHz/1.6MHz, Constant Current Boost and SEPIC LED Driver with Internal Compensation Check for Samples: LM3410 FEATURES 1 • • • • • 2 • • • • Space Saving SOT23-5 & 6-LLP Package
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LM3410
SNVS541F
LM3410/LM3410Q
525kHz/1
OT23-5
LM3410-Y)
LM3410-X)
LM3410Q
AEC-Q100
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1CGK
Abstract: FS0102DL
Text: FS01.L SENSITIVE GATE SCR On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 200 V ÷ 600 V SOT23-3L FEATURES Glass/passivated die junctions Low current SCR Low thermal resistance High surge current capability Low forward voltage drop
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2002/95/EC
2002/96/EC
J-STD-020,
OT23-3L.
MIL-STD-750
J-STD-002
JESD22-B102.
FS01ibutors
fs01lsg
Dec-11
1CGK
FS0102DL
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TS16949
Abstract: ZXTC2063E6 ZXTC2063E6TA SOT23-6 MARKING 57 NPN SOT23-6
Text: ZXTC2063E6 40V, SOT23-6, complementary medium power transistors Summary BVCEO > 40 -40 V BVECO > 6 (-3)V IC(cont) = 3.5 (-3)A VCE(sat) < 60 (-90)mV @ 1A RCE(sat) = 38 (58)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device. Combining NPN and PNP
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ZXTC2063E6
OT23-6,
OT23-6
ZXTC2063E6TA
D-81541
TS16949
ZXTC2063E6
ZXTC2063E6TA
SOT23-6 MARKING 57
NPN SOT23-6
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DIODES 11W
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTC2063E6 40V, SOT23-6, complementary medium power transistors Summary BVCEO > 40 -40 V BVECO > 6 (-3)V IC(cont) = 3.5 (-3)A VCE(sat) < 60 (-90)mV @ 1A RCE(sat) = 38 (58)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve
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ZXTC2063E6
OT23-6,
OT23-6
ZXTC20:
D-81541
DIODES 11W
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Untitled
Abstract: No abstract text available
Text: MMBR911LT1 RF & MICROWAVE TRANSISTORS DESCRIPTION KEY FEATURES ! High FTau-6.0 GHz EL PR The MMBR911LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package IMPORTANT: For the most current data, visit: http://www.advancedpower.com
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MMBR911LT1
MMBR911LT1
OT-23
MMBR911MLT1
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Untitled
Abstract: No abstract text available
Text: BFR92ALT1 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION DESCRIPTION KEY FEATURES E PR The BFR92ALT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. Low noise-3.0dB@500MHz Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
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BFR92ALT1
BFR92ALT1
500MHz
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MMBR911LT1
Abstract: MMBR911MLT1
Text: MMBR911MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR911MLT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package
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MMBR911MLT1
MMBR911MLT1
MMBR911LT1
MMBR911LT1
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Untitled
Abstract: No abstract text available
Text: MMBR911LT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR911LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
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MMBR911LT1
MMBR911LT1
MMBR911MLT1
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Untitled
Abstract: No abstract text available
Text: BFR92ALT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The BFR92ALT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-3.0dB@500MHz ! Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
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BFR92ALT1
BFR92ALT1
500MHz
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Untitled
Abstract: No abstract text available
Text: MMBR5179LT1 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION DESCRIPTION KEY FEATURES E PR The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. Low noise-4.5dB@200MHz Low cost SOT23 package
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MMBR5179LT1
MMBR5179LT1
200MHz
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Untitled
Abstract: No abstract text available
Text: MMBR911MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR911MLT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package
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MMBR911MLT1
MMBR911MLT1
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MMBR901
Abstract: MRF9011LT1 MRF9011MLT1 MMBR901MLT1
Text: MMBR901MLT1/MRF9011MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR901LT1/MRF9011LT1 are low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-1.8dB@1GHz ! Low cost SOT23/SOT143
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MMBR901MLT1/MRF9011MLT1
MMBR901LT1/MRF9011LT1
OT23/SOT143
MMBR901
MRF9011LT1
MRF9011MLT1
MMBR901MLT1
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MRF9411MLT1
Abstract: No abstract text available
Text: MMBR941MLT1/MRF9411MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR941MLT1/MRF9411MLT1 are low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-1.3dB@1GHz ! Low cost SOT23/SOT143
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MMBR941MLT1/MRF9411MLT1
MMBR941MLT1/MRF9411MLT1
OT23/SOT143
MMBR941LMT1/MRF9411MLT1
MRF9411MLT1
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1D SOT 23-6
Abstract: MMBTA06 MMBTA42 MMBTA43 NZT6714 NZT6715 NZT6717 PZTA06 PZTA42
Text: This Surface Mount Transistors Material tr Copyrighted □ □ Ln a t-* t-1 Ui Discrete POWER & Signal Technologies Na t i o n a I f i Semiconductor" Surface Mount Transistors a NPN Medium Power JC a JC -0 _D By ai a -i Device No. SOT-23 Mark Case Style
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OT-23
MMBTA06
O-236
PZTA06
O-261
NZT6714
NZT6715
NZT6717
1D SOT 23-6
MMBTA06
MMBTA42
MMBTA43
PZTA42
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Untitled
Abstract: No abstract text available
Text: VP2106 VP2110 Superte jc¡ne. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ BV Order Number / Package ^DS ON ' d (ON) (max) (min) TO-92 TO-236AB* Diet 12fi -0.5A VP2106N3 — VP2106ND P1 A * VP2110ND where * = 2-week alpha date code
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VP2106
VP2110
VP2106N3
O-236AB*
VP2110K1
VP2106ND
VP2110ND
OT-23:
-100V
VP2106/VP2110
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Untitled
Abstract: No abstract text available
Text: M AXIMUM RATINGS Symbol Value C o lle ctor-E m itter Voltage Rating v CEO 40 Vdc Collector-Base Voltage v CBO 60 Vdc Em itter-Base Voltage v EBO 6.0 Vdc 'c 600 m Adc Symbol Max Unit Pd 225 mW 1.8 m W:'JC Collector C urrent — C ontinuous Unit MMBT4401LT1*
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MMBT4401LT1*
OT-23
O-236AB)
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PAL 007 B
Abstract: PAL 007 c PAL 007 E PAL 007 a TDA8505 ENCODER PAL TO NTSC PAL 007 philips fag circuit IEC134 TDA8501
Text: P h ilip s Sem iconductors Video Products O b je c t lv ^ p e c if jc a t jo n TDA8501 PAL/NTSC encoder FEA TU RES G EN ERAL DESCRIPTION • Two input stages: R , G , B and - R -Y , -(B -Y ), Y with multiplexing • Chrominance processing, highly integrated, includes
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TDA8501
MKA455
MKA456
MKA457
7110A2b
0D77DM7
711002b
0D77D4B
PAL 007 B
PAL 007 c
PAL 007 E
PAL 007 a
TDA8505
ENCODER PAL TO NTSC
PAL 007
philips fag circuit
IEC134
TDA8501
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Untitled
Abstract: No abstract text available
Text: M C C SOT-23 P la s tic-E n cap su fa te T ra n s is to rs ^ 1.BASE 2 .EMITTER 3.COLLECTOR 8 9 0 1 5LT1 TR A N SIS TO R PNP FEATURES ftovterdtesipation PCM: 0.2 W (Tam b= 25'C) Collector current ICM: -0.1 A Collector-base voltage V( b r jc b o :-50V Operating and storage junction temperature range
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OT-23
-100m
-10mA
30MHz
S9015LT1
S9015LT1
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CV 1
Abstract: No abstract text available
Text: M C C SOT-23 P lastic-E n cap su late T ra n s is to rs ^ ^ ^ M M B T 5401LT 1 TR A N SISTO R PNP 1 .BASE 2.EMITTER 3.COLLECTOR FEATURES Power dissipation Pcm: 0.3 W (Tamb=25"C) C ollecto r current ICM: -0 .6 A 2.4 Collector-base voltage « 13 ► V ( b r jc b o :-1 6 0 V
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OT-23
5401LT
-100w
-500m
-50mA
100MHz
MMBT5401LT1
MMBT5401LT1
CV 1
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Untitled
Abstract: No abstract text available
Text: Diodes/Transistors/LEDs Assortment Kit 42 \ nines mini t I k IIs /i S i m i l l Si ^ 11: 11 H i n d i s h i t I lim it s SOT23 SOT23 MMBD914 BAS16 MMBD2838 (BAV70) MMBD2836 (BAW56) MMBD7000 (BAV99) * SOD80 BAV100 LL914 LL4148 R lL 'IillL T S SOD80 l.ll \ 111|]
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MMBD914
BAS16)
MMBD2838
BAV70)
MMBD2836
BAW56)
MMBD7000
BAV99)
SM4001
SM4002
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