EEFCX0D221R
Abstract: No abstract text available
Text: Specialty Polymer Aluminum Electrolytic Chip Capacitors SP–Cap / CX Surface Mount Type Series: CX •Features Japan Excellent Noise-absorbent Characteristics ■ Low profile type (2.0mm Height) ■ Pb free ■ 260ºC reflow ■ ■Specification Operating Temp. Range
|
Original
|
PDF
|
ini50
EEFCX0D221R
|
transistor motorola 351
Abstract: MRFIC1808 MRFIC1808DMR2 2C46
Text: Order this document by MRFIC1808/D MRFIC1808 1.9 GHz GaAs Low Noise Amplifier Designed primarily for use in wireless Personal Communication Systems PCS applications such as Digital European Cordless Telephone (DECT), Japan’s Personal Handy System (PHS) and the emerging North American
|
Original
|
PDF
|
MRFIC1808/D
MRFIC1808
MRFIC1808DM
transistor motorola 351
MRFIC1808
MRFIC1808DMR2
2C46
|
Untitled
Abstract: No abstract text available
Text: MRFIC1808 1.9 GHz GaAs Low Noise Amplifier Designed primarily for use in wireless Personal Communication Systems PCS applications such as Digital European Cordless Telephone (DECT), Japan’s Personal Handy System (PHS) and the emerging North American systems as a preamp for discrete or integrated downmixers. The
|
Original
|
PDF
|
MRFIC1808
MRFIC1808DM
|
Nec K 872
Abstract: uPC1652 transistor NEC D 586 uPC1658C IC 14511 NEC D 586 PC1658C PC1658G UPC1652G TRANSISTOR K 1507
Text: Application Note Silicon Low-Noise High-Frequency Amplifier IC Usage of µPC1658G Document No. P10965EJ5V0AN00 5th edition Date Published January 2000 N CP(K) Printed in Japan 1996, 2000 [MEMO] 2 Application Note P10965EJ5V0AN00 The information in this document is subject to change without notice.
|
Original
|
PDF
|
PC1658G
P10965EJ5V0AN00
Nec K 872
uPC1652
transistor NEC D 586
uPC1658C
IC 14511
NEC D 586
PC1658C
PC1658G
UPC1652G
TRANSISTOR K 1507
|
uPC1658C
Abstract: uPC1658 uPC1656 1568G uPC1652 pc1658 uPC1658A 80 nf 100 1658C pc1658C
Text: Application Note LOW-NOISE HIGH-FREQUENCY AMPLIFIERS µPC1658A µPC1658C µPC1658G Document No. P10965EJ3V0AN00 3rd edition Date Published November 1999 N CP(K) Printed in Japan 1996, 1999 [MEMO] 2 Application Note P10965EJ3V0AN00 • The information in this document is subject to change without notice. Before using this document, please
|
Original
|
PDF
|
PC1658A
PC1658C
PC1658G
P10965EJ3V0AN00
intell88-6130
uPC1658C
uPC1658
uPC1656
1568G
uPC1652
pc1658
uPC1658A
80 nf 100
1658C
pc1658C
|
MRF549
Abstract: MRF5711 MRF579 MRF9411 MRF949 MRF9511 MRF959
Text: Order this document by MRF959IB/D Information Brief New Versions of Three Popular Low-Noise Motorola RF Transistors Will Enable Design Shrinks . . . Has 42% smaller footprint area The new MRF949, MRF959 and MRF579 are re-packaged versions of the popular MRF9411, MRF9511 and MRF5711 silicon NPN RF transistors. The newer
|
Original
|
PDF
|
MRF959IB/D
MRF949,
MRF959
MRF579
MRF9411,
MRF9511
MRF5711
SC-90
OT-143
MRF549
MRF9411
MRF949
|
SOT 143 footprint
Abstract: MRF5711 MRF5711 equivalent 602 SOT MRF9511 equivalent MRF9411 MRF949 MRF959 MRF579 MRF9511
Text: Order this document by MRF579IB/D Information Brief New Versions of Three Popular Low-Noise Motorola RF Transistors Will Enable Design Shrinks . . . Has 42% smaller footprint area The new MRF949, MRF959 and MRF579 are re-packaged versions of the popular MRF9411, MRF9511 and MRF5711 silicon NPN RF transistors. The newer
|
Original
|
PDF
|
MRF579IB/D
MRF949,
MRF959
MRF579
MRF9411,
MRF9511
MRF5711
SC-90
OT-143
SOT 143 footprint
MRF5711 equivalent
602 SOT
MRF9511 equivalent
MRF9411
MRF949
|
mrf9411
Abstract: MRF579 low noise transistors rf mrf571 MRF5711 equivalent SOT 143 footprint MRF5711 MRF949 MRF9511 MRF959
Text: Order this document by MRF949IB/D Information Brief New Versions of Three Popular Low-Noise Motorola RF Transistors Will Enable Design Shrinks . . . Has 42% smaller footprint area The new MRF949, MRF959 and MRF579 are re-packaged versions of the popular MRF9411, MRF9511 and MRF5711 silicon NPN RF transistors. The newer
|
Original
|
PDF
|
MRF949IB/D
MRF949,
MRF959
MRF579
MRF9411,
MRF9511
MRF5711
SC-90
OT-143
mrf9411
low noise transistors rf
mrf571
MRF5711 equivalent
SOT 143 footprint
MRF949
|
MRF5711
Abstract: MRF579 MRF9411 MRF949 MRF9511 MRF959
Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Order this document by MRF949IB/D ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Information Brief New Versions of Three Popular Low-Noise Motorola RF Transistors Will Enable Design Shrinks . . . Has 42% smaller footprint area
|
Original
|
PDF
|
MRF949IB/D
MRF949,
MRF959
MRF579
MRF9411,
MRF9511
MRF5711
SC-90
OT-143
MRF9411
MRF949
|
MRF549
Abstract: MRF579 MRF959 MRF5711 MRF9411 MRF949 MRF9511 SOT 143 footprint
Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Order this document by MRF959IB/D ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Information Brief New Versions of Three Popular Low-Noise Motorola RF Transistors Will Enable Design Shrinks . . . Has 42% smaller footprint area
|
Original
|
PDF
|
MRF959IB/D
MRF949,
MRF959
MRF579
MRF9411,
MRF9511
MRF5711
SC-90
OT-143
MRF549
MRF9411
MRF949
SOT 143 footprint
|
a2073
Abstract: 2SA2073 Transistor 2sa2073 2SC5826
Text: 2SA2073 Transistors High voltage discharge, High speed switching, Low Noise −60V, −3A 2SA2073 zDimensions (Unit : mm) ATV 0.5 4.4 0.9 1.0 0.65Max. (1) (2) (3) 2.54 2.54 (1) Emitter (2) Collector (3) Base zApplications High speed switching, Low noise
|
Original
|
PDF
|
2SA2073
65Max.
-200mV
-200mA)
2SC5826.
A2073
a2073
2SA2073
Transistor 2sa2073
2SC5826
|
2SA2092
Abstract: 2SC5865 2SA20
Text: 2SC5865 Transistors High voltage discharge, High speed switching, Low Noise 60V, 1A 2SC5865 zApplications High speed switching, Low noise zDimensions (Unit : mm) TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) 1.6 2.8 0~0.1 0.3~0.6 zFeatures 1) High speed switching. ( Tf : Typ. : 50ns at IC = 1.0A)
|
Original
|
PDF
|
2SC5865
200mV
500mA,
2SA2092.
2SA2092
2SC5865
2SA20
|
A2072
Abstract: 2SC5825 2SA2072 A207-2 Japan Low Noise Transistors
Text: 2SA2072 Transistors High voltage discharge, High speed switching, Low Noise −60V, −3A 2SA2072 zExternal dimensions (Unit : mm) 6.5 5.1 CPT3 (SC-63) <SOT-428> 2.3 2.5 0.65 0.9 (2) Collector (1) 2.3 (2) (3) 2.3 (3) Emitter 0.8Min. 0.75 (1) Base zApplications
|
Original
|
PDF
|
2SA2072
-200mV
-200mA)
2SC5825.
SC-63)
OT-428>
A2072
A2072
2SC5825
2SA2072
A207-2
Japan Low Noise Transistors
|
LP1001
Abstract: LP1001A
Text: MOTOROLA Order this document by LP1001/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors LP1001 LP1001A The LP1001 is designed for CATV and other Broadband linear applications. This Motorola series of small–signal plastic transistors offers superior quality
|
Original
|
PDF
|
LP1001/D
LP1001
LP1001A
LP1001
226AA
LP1001/D*
LP1001A
|
|
MRF5711LT1
Abstract: MMBR571LT1 MRF571 11608A ZO 103 MA 75 603
Text: MOTOROLA Order this document by MMBR571LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors MMBR571LT1 MRF5711LT1 Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic packages. This
|
Original
|
PDF
|
MMBR571LT1/D
MMBR571LT1
MRF5711LT1
MRF5711LT1,
MRF571)
A/500
MMBR571LT1)
MRF5711LT1)
MMBR571LT1
MRF5711LT1
MRF571
11608A
ZO 103 MA 75 603
|
LM833
Abstract: LM833DR2 lm833 equivalent LM833D LM833N MC33079
Text: LM833 Dual Low Noise, Audio Amplifier The LM833 is a standard low–cost monolithic dual general–purpose operational amplifier employing Bipolar technology with innovative high–performance concepts for audio systems applications. With high frequency PNP transistors, the LM833 offers low voltage noise
|
Original
|
PDF
|
LM833
LM833
r14525
LM833/D
LM833DR2
lm833 equivalent
LM833D
LM833N
MC33079
|
2SC3837K
Abstract: T108 marking X4 UMX4N
Text: EMX4 / UMX4N / IMX4 Transistors High transition frequency dual transistors EMX4 / UMX4N / IMX4 zExternal dimensions (Unit : mm) zFeatures 1) Two 2SC3837K chips in a EMT or UMT or SMT package. 2) High transition frequency. (fT=1.5GHz) 3) Low output capacitance. (Cob=0.9pF)
|
Original
|
PDF
|
2SC3837K
T108
marking X4
UMX4N
|
ic 710
Abstract: BA6809F BA6819AF
Text: Motor driver ICs 2-phase half-wave motor driver BA6809F / BA6819AF The BA6809F and BA6819AF are motor drivers designed for 3V and 5V fan motors. Built-in output transistors reduce the number of external components required. The ICs have an alarm output pin BA6809F and Hall output pin
|
Original
|
PDF
|
BA6809F
BA6819AF
BA6819AF
BA6809F)
BA6819AF)
BA6819Aipment
ic 710
|
MMBT5088
Abstract: MMBT5088LT1 MMBT5088LT1G MMBT5089 MMBT5089LT1 MMBT5089LT1G
Text: MMBT5088LT1, MMBT5089LT1 MMBT5089LT1 is a Preferred Device Low Noise Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO MMBT5088 MMBT5089
|
Original
|
PDF
|
MMBT5088LT1,
MMBT5089LT1
MMBT5089LT1
MMBT5088
MMBT5089
MMBT5088LT1/D
MMBT5088
MMBT5088LT1
MMBT5088LT1G
MMBT5089
MMBT5089LT1G
|
IC built-in 2-phase FAN motor
Abstract: BA6407AF Audio Circuit with IC 701 3 pin 12V Hall IC Fan Driver
Text: Motor driver ICs 2-phase half-wave motor driver BA6407AF The BA6407AF is a motor driver dedicated to 12V fan motors. Built-in output transistors reduce the number of external components required. The IC has a lock signal output pin. FApplications Fan motors
|
Original
|
PDF
|
BA6407AF
BA6407AF
IC built-in 2-phase FAN motor
Audio Circuit with IC 701
3 pin 12V Hall IC Fan Driver
|
Untitled
Abstract: No abstract text available
Text: MBT6429DW1T1 Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol 6429DW1T1 Unit Collector - Emitter Voltage VCEO 45 Vdc Collector - Base Voltage VCBO 55 Vdc Emitter - Base Voltage VEBO 6.0 Vdc IC 200 mAdc Characteristic Symbol Max Unit Total Device Dissipation Note 1
|
Original
|
PDF
|
MBT6429DW1T1
6429DW1T1
SC-88
OT-363)
MBT6429DW1T1/D
|
MMBT5088
Abstract: MMBT5088LT1 MMBT5089 MMBT5089LT1
Text: ON Semiconductort MMBT5088LT1 MMBT5089LT1 Low Noise Transistors NPN Silicon MMBT5089LT1 is a Preferred Device 3 MAXIMUM RATINGS Rating 1 Symbol 5088LT1 5089LT1 Unit Collector–Emitter Voltage VCEO 30 25 Vdc Collector–Base Voltage VCBO 35 30 Vdc Emitter–Base Voltage
|
Original
|
PDF
|
MMBT5088LT1
MMBT5089LT1
MMBT5089LT1
5088LT1
5089LT1
236AF)
r14525
MMBT5088LT1/D
MMBT5088
MMBT5088LT1
MMBT5089
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by CA901/D SEMICONDUCTOR TECHNICAL DATA VHF/UHF CATV Amplifiers CA901 Designed for broadband applications requiring low–distortion amplification. Specifically intended for CATV/MATV market requirements. These amplifiers feature ion–implanted arsenic emitter transistors and an all gold metal system.
|
Original
|
PDF
|
CA901/D
CA901
DIN45004B
CA901
|
motorola 7673 A
Abstract: MRF957 MMBR951 MMBR951ALT1 MMBR951LT1 MRF957T1 NF50 sot-23 marking 7z Motorola 8039
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors Order this document by MMBR951/D MMBR951 MRF957 SERIES Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.
|
Original
|
PDF
|
MMBR951/D
MMBR951
MRF957
MMBR951LT1
MRF957T1
MMBR951
motorola 7673 A
MRF957
MMBR951ALT1
MMBR951LT1
MRF957T1
NF50
sot-23 marking 7z
Motorola 8039
|