Untitled
Abstract: No abstract text available
Text: A B C D E G F H REVISIONS REV DESCRIPTION, ECN, EAR NO. DATE APP'D A PRODUCT DRAWING EAR 14150 JAN07/13 KL 5.50 [.217] DEEP THREADED HOLES. SEE ORDERING CODE THREAD OPTION 1 1 4.50 .177 24.00 .945 2.50 .098 RUGGED 8 POSITION RECEPTACLE DATE CODE INK MARKING
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JAN07/13
MRJR-578
JAN04/13
P-MRJR-578X-X1
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Untitled
Abstract: No abstract text available
Text: A B C D E G F H REVISIONS 5.50 [.217] DEEP THREADED HOLES. SEE ORDERING CODE THREAD OPTION REV DESCRIPTION, ECN, EAR NO. DATE APP'D A PRODUCT DRAWING EAR 14150 JAN07/13 K.L. B PRODUCT DRAWING (EAR 14296) JUL24/14 K.L. 1 1 4.50 .177 24.00 .945 2.50 .098 DATE CODE
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JAN07/13
JUL24/14
MRJR-578
JAN04/13
P-MRJR-578X-X1
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Untitled
Abstract: No abstract text available
Text: A B C D E G F H REVISIONS 5.50 [.217] DEEP THREADED HOLES. SEE ORDERING CODE THREAD OPTION 4.50 .177 1 REV DESCRIPTION, ECN, EAR NO. DATE APP'D A PRODUCT DRAWING EAR 13977 JAN31/13 KL 28.32±0.50 1.115±.020 24.00 .945 2.50 .098 DATE CODE INK MARKING 18.00±0.25
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JAN31/13
JAN07/13
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet, Rev. 1.6, Januar 2007 6ED003L06-F Integrated 3 Phase Gate Driver Power Management & Drives N e v e r s t o p t h i n k i n g 6ED003L06-F Integrated 3 Phase Gate Driver 6ED003L06-F Preliminary Revision History: Previous Version: Page
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6ED003L06-F
6ED003L06-F
HLG05506
Jan-07
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BAT18
Abstract: ASS infineon
Text: BAT18. Silicon RF Switching Diode Low-loss VHF / UHF switch above 10 MHz PIN diode with low forward resistance BAT18-04 BAT18-05 3 3 D 1 D 2 D 1 1 2 1 D 2 2 Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS nH Marking
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BAT18.
BAT18-04
BAT18-05
BAT18-04
BAT18-04,
BAT18
ASS infineon
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180-nm CMOS standard cell library inverter
Abstract: 130 nm CMOS standard cell library 45-nm CMOS standard cell library process technology 45 nm library CS200A 130nm 130-nm CMOS standard cell library inverter S/130 nm CMOS standard cell library SEM 2006 CS201
Text: Fujitsu @ 65nm: Providing Solutions through Integrated Design Services The Fujitsu Advantage…Not Just a Foundry Contents Benefits of leading-edge technology at 65nm Challenges Solutions Fujitsu Microelectronics America, Inc. 2 FSA Semiconductor Forum, June 14, 2006
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130nm
180-nm CMOS standard cell library inverter
130 nm CMOS standard cell library
45-nm CMOS standard cell library process technology
45 nm library
CS200A
130-nm CMOS standard cell library inverter
S/130 nm CMOS standard cell library
SEM 2006
CS201
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NS9360B-0-C177
Abstract: NS9360B-0-I155 NS9750B-0-C125 NS9750B-0-C200 NS9360B-0-C103 NET 50-QIT-3 301902901 NS7520B-1-I55 DB78F UNC20
Text: Digi International RoHS Compliant Product Information Item Description Plan Compliant Note Sample - Production Date Multiport Serial Cards 76000001 4 Port DB9F DTE Cable RoHS Jun-06 76000002 4 Port DB9F RS422 Cable RoHS Feb-06 76000003 4 Port DB9M DTE Cable
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Jun-06
RS422
Feb-06
DB25F
DB25M
Jan-06
NS9360B-0-C177
NS9360B-0-I155
NS9750B-0-C125
NS9750B-0-C200
NS9360B-0-C103
NET 50-QIT-3
301902901
NS7520B-1-I55
DB78F
UNC20
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1519B
Abstract: P4C1041
Text: P4C1041 HIGH SPEED 256K x 16 4 MEG STATIC CMOS RAM FEATURES Easy Memory Expansion Using CE and OE Inputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down when deselected Packages —44-Pin SOJ, TSOP II High Speed (Equal Access and Cycle Times)
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P4C1041
--44-Pin
P4C1041
SRAM133
SRAM133
Jan-07
1519B
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Six-Sigma Methodologies Support Back-End Yield and Quality Metrics Improvement
Abstract: No abstract text available
Text: Six-Sigma Methodologies Support Back-End Yield and Quality Metrics Improvement Tom Hand, Jennifer Welborn, and Jim Oerth Skyworks Solutions, 20 Sylvan Road, Woburn, MA 01801 [email protected] 781 376-3539 Keywords: … Backend Process Visual Yield Six Sigma
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BAT18
Abstract: ASS infineon
Text: BAT18. Silicon RF Switching Diode Low-loss VHF / UHF switch above 10 MHz PIN diode with low forward resistance BAT18-04 BAT18-05 3 3 D 1 D 2 D 1 1 2 1 D 2 2 Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS nH Marking
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BAT18.
BAT18-04
BAT18-05
BAT18-04
BAT18-04,
BAT18
ASS infineon
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fast diode SOT-227
Abstract: N-channel MOSFET to-247 FREDFETs TO-264 TO247 APT17F120J TO-247 APT44F80L to264
Text: TM Power MOS 8 is a new family of high speed, high voltage N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These new MOSFETs /FREDFETs have been optimized for both hard and soft switching in high frequency, high voltage applications rated above
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APT84M50L
APT58M50J
APT100M50J
APT34F60B
O-247
O-264
OT-227
fast diode SOT-227
N-channel MOSFET to-247
FREDFETs
TO-264
TO247
APT17F120J
TO-247
APT44F80L
to264
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BAT18
Abstract: BAT18-05 BAT18-04
Text: BAT18. Silicon RF Switching Diode Low-loss VHF / UHF switch above 10 MHz PIN diode with low forward resistance BAT18-04 BAT18-05 3 3 D 1 D 2 D 1 1 2 1 D 2 2 Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS nH Marking
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BAT18.
BAT18-04
BAT18-05
BAT18-04,
Jan-07-2003
100MHz
BAT18
BAT18-05
BAT18-04
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P9936LV
Abstract: nikos
Text: P9936LV Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 PRODUCT SUMMARY V BR DSS RDS(ON) ID 25 120mΩ 5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS
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P9936LV
P9936LV"
JAN-07-2002
P9936LV
nikos
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Untitled
Abstract: No abstract text available
Text: R E V IS IO N S SYM ERN NO. B APPRD. DATE JAN07/08 PROPOSAL 4 AMPHENOL PART NUMBER CONFIGURATION EON, ZONE NOV05/08 UPDATED THIS IS A CAD DRAWING. DO NOT MANUALLY REVISE. U78 — B 1 1 2 7 — 0 X X X 1 DUST COVER OPTION -0 = NO DUST COVER
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JAN07/08
NOV05/08
127-0XXX1
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mark P03
Abstract: No abstract text available
Text: JGN-07-2000 11:40 u LTC BOSTON SPILES i 978 656 4760 P.02 LM138/883 5 Amp Positive Adjustable Regulator m TECHNOLOGY m n x im u m u r t i a g s D C S C R IP TIO n a b s o lu te The LM138/883 is a 3 terminal positive adjustable regula tor capable of supplying up to 5A. The output is adjusted
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JGN-07-2000
LM138/883
MIL-STD-883
5004of
mark P03
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Untitled
Abstract: No abstract text available
Text: TH I S DRAW ING IS U N P U B L I S H E D . C O P Y R I G H T 2 0 08 R E L E A S E D FOR P U B L I C A T I O N L OC REV I S IONS D I ST BY T Y C O E L E C T R O N I C S C O R P O R A T I O N . A L L R I G H T S R E S E R V E D . D E S C R I P T I ON M4 M5 16-AUG-05 None gleich
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16-AUG-05
JAN-07
25-JUN-08
06APR2009
05-1AN-89
9628V6
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a8498
Abstract: ECR-07-00
Text: TH I 5 DRAW I NG I S U N P U B L I S H E D . COPYRIGHT R E L E A S E D FOR P U B L I C A T I O N 19 BY AMP INCORPORATED. ALL RIGHTS . I9 LOC REV I S IONS D I ST DY RESERVED. LTR R E V I S E D E C R - 07-00 I 592 N OT E S : -is * POS . # fln C U U ln Q n t U ln G r
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ECR-07-00
JAN07
g-84981
470-I
9MAY94
a8498
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Untitled
Abstract: No abstract text available
Text: 2 TH I S DRAW ING IS U N P U B L I S H E D . COPYRIGHT 2006 R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S COR POR AT I ON . A L L RIGHTS 20 LOC REV I S I O N S D I ST 2 RESERVE[ - p LTR DE SCRI PTI ON A2 1. RJ 4 E C A T E G O R Y 5E P A T E H E A B L E A S S E M B L I E S
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Untitled
Abstract: No abstract text available
Text: 2 TH I S DRAW ING IS U N P U B L I S H E D . COPYRIGHT 2006 1. R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S COR POR AT I ON . A L L RIGHTS 20 LOC D I ST RJ 4 E C A T E G O R Y 5E P A T E H E A B L E A S S E M B L I E S USED AS P A T E H L E A D S IN GEN ERI C C U S T O M E R
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Untitled
Abstract: No abstract text available
Text: 4 TH IS DRAWING 3 IS U N P U B LIS H E D . RELEASED FOR PUBLICATIO N ALL COPYRIGHT RIGHTS - 2 - LOC RESERVED. GP BY TYCO ELECTRONICS CORPORATION. 7 27.10 [1.067] / S \ DATE CODE DIST 00 LTR D E SC RIPTIO N C -Y - DATE REVISED PER E C O -0 7 -0 0 0 5 1 3
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JAN07
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