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    J4 TRANSISTOR Search Results

    J4 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    J4 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DMC26404 Silicon NPN epitaxial planar type Unit: mm For digital circuits • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: J4  Basic Part Number


    Original     		PDF DMC26404 UL-94 DRC2114Y DMC264040R 40easures

    smd transistor J3

    Abstract: SMD TRANSISTOR D2 smd u1 transistor smd transistor C3 j3 smd transistor smd transistor d4 c3 smd transistor MKDSN1.5 transistor smd j4 smd transistor r2
    Text: STMicroelectronics: STEVAL-ILL007V1 Quantity 1 1 2 1 5 1 2 1 1 1 3 1 1 1 1 1 Ref C1 C2 C3, C4 C5 D2, D4, D5, D6, & D7 J1 J2, J4 J3 L1 Q1 Rs, Rs2, Rs3 R1 R2 R3 R4 U1 Part Description 1200uF/35V electrolytic 220pF/50V ceramic 22nF/50V ceramic 4.7nF/50V ceramic


    Original     		PDF STEVAL-ILL007V1 1200uF/35V 220pF/50V 22nF/50V 7nF/50V EEU-FC1V122L STPS2L40U 68ohms 74kohms 33kohms smd transistor J3 SMD TRANSISTOR D2 smd u1 transistor smd transistor C3 j3 smd transistor smd transistor d4 c3 smd transistor MKDSN1.5 transistor smd j4 smd transistor r2

    1090mhz

    Abstract: JESD22-A114 PRA1000
    Text: PRELIMINARY Long & Short Pulse 960-1215Mz 1025-1150MHz 1030-1090MHz PRA1000 300 Watt, 36V, Pulsed LDMOS RF Power Transistor DME, TACAN, TCAS, MODE S, Introduction Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: Sym Value Unit


    Original     		PDF 960-1215Mz 1025-1150MHz 1030-1090MHz PRA1000 PRA1000 52-j1 1090mhz JESD22-A114

    Contrans V17131

    Abstract: contrans I contrans J1 TRANSISTOR V17131-16 B10K transistor BA 14 DIN19234 Contrans V17131-53 10KJ1
    Text: Trennschaltversta¨rker V17131-16 2 Kana¨le, 2 x Transistorausgang J3 J6 • Anschluß Initiatoren, Schaltkontakte, Na¨herungsschalter HB Contrans I A B & ■ galvanische Trennung zwischen Einga¨ngen, Ausga¨ngen und Energieversorgung ■ Drahtbruch- und Kurzschlußu¨berwachung


    Original     		PDF V17131-16 Contrans V17131 contrans I contrans J1 TRANSISTOR V17131-16 B10K transistor BA 14 DIN19234 Contrans V17131-53 10KJ1

    TRANSISTOR SUBSTITUTION

    Abstract: tba 2003 capacitor j4 22010 TRANSISTOR SUBSTITUTION DATA BOOK 08051C222MAT2A 12061C104MAT2A CRF-22010 CRF-22010-TB RO4003
    Text: CRF-22010-TB Evaluation Board for CRF-22010 Version A Narrowband Features • • • • • • Ready-to-Go RF Amplifier Requires Two Power Supplies Externally Adjustable Gate Bias Voltage Solderless Transistor Changeout Includes Heat Sink, Fan, and Wiring Harness


    Original     		PDF CRF-22010-TB CRF-22010 CRF-22010-TB-A CRF-22010 TRANSISTOR SUBSTITUTION tba 2003 capacitor j4 22010 TRANSISTOR SUBSTITUTION DATA BOOK 08051C222MAT2A 12061C104MAT2A CRF-22010-TB RO4003

    2SC4406

    Abstract: 2SC4269 ITR06763 ITR06764 ITR06765 ITR06766 marking JY
    Text: Ordering number:ENN2759A NPN Epitaxial Planar Silicon Transistor 2SC4406 VHF Frequency Mixer, Local Oscillator Applications Applications Package Dimensions • VHF mixer, frequency converters, local oscillators. unit:mm 2059B Features [2SC4406] 0.15 0.2 0.425


    Original     		PDF ENN2759A 2SC4406 2059B 2SC4406] 2SC4406applied 2SC4406 2SC4269 ITR06763 ITR06764 ITR06765 ITR06766 marking JY

    2SC4270

    Abstract: ITR06587 ITR06588 ITR06589 ITR06590 ITR06591 transistor KT 816
    Text: Ordering number:ENN2971 NPN Epitaxial Planar Silicon Transistor 2SC4270 UHF Converter, Local Oscillator Applications Features Package Dimensions • Small noise figure : NF=3.0dB typ f=0.9GHz · High power gain : PG=12dB typ (f=0.9GHz) · High cutoff frequency : fT=3.0GHz typ


    Original     		PDF ENN2971 2SC4270 2018B 2SC4270] 2SC4270 ITR06587 ITR06588 ITR06589 ITR06590 ITR06591 transistor KT 816

    Ic14nf

    Abstract: 2SA1669 ITR04064 ITR04065 ITR04066 ITR04067 ITR04068
    Text: Ordering number:ENN2972 PNP Epitaxial Planar Silicon Transistors 2SA1669 High-Frequency Amplifier Applications Features Package Dimensions • High cutoff frequnecy : fT=3.0GHz typ. · High power gain : MAG=11dB typ f=0.9GHz · Small noise figure : NF=2.0dB typ (f=0.9GHz)


    Original     		PDF ENN2972 2SA1669 2018B 2SA1669] Ic14nf 2SA1669 ITR04064 ITR04065 ITR04066 ITR04067 ITR04068

    2SC4269

    Abstract: ITR06577 ITR06578 ITR06579 ITR06580 ITR06581
    Text: Ordering number:ENN2969A NPN Epitaxial Planar Silicon Transistor 2SC4269 VHF Converter, Local Oscillator Applications Features Package Dimensions • High power gain : PG=15dB typ f=0.4GHz · High cutoff frequency : fT=1.2GHz typ unit:mm 2018B 0.4 0.16 0 to 0.1


    Original     		PDF ENN2969A 2SC4269 2018B 2SC4269] 2SC4269 ITR06577 ITR06578 ITR06579 ITR06580 ITR06581

    TEMPERATURE CONTROL IC 4570

    Abstract: SANYO DC 303 2SC4364 ITR06644 ITR06645 ITR06646 ITR06647 ITR06648 ic 4570
    Text: Ordering number:ENN3008 NPN Epitaxial Planar Silicon Transistor 2SC4364 VHF, UHF/MIX. OSC. Low-Voltage High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage operation : fT=3.0GHz typ VCE=3V : MAG=11dB typ (VCE=3V, IC=3mA) : NF=3.0dB typ (VCE=3V, IC=3mA)


    Original     		PDF ENN3008 2SC4364 2018B 2SC4364] TEMPERATURE CONTROL IC 4570 SANYO DC 303 2SC4364 ITR06644 ITR06645 ITR06646 ITR06647 ITR06648 ic 4570

    F J1 3007-2

    Abstract: J1 3007-2 J1 3007-1
    Text: Ordering number:ENN3007 NPN Epitaxial Planar Silicon Transistor 2SC4365 VHF, UHF/MIX. OSC. Low-Voltage High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage operation : fT=3.0GHz typ VCE=3V : MAG=12dB typ (VCE=3V, IC=10mA) : NF=1.5dB typ (VCE=3V, IC=5mA)


    Original     		PDF ENN3007 2SC4365 2018B 2SC4365] F J1 3007-2 J1 3007-2 J1 3007-1

    J1 3007-1

    Abstract: J1 3007-2 2SC4365 ITR06656 ITR06657 ITR06658 ITR06659 ITR06660 F J1 3007-2 marking amplifier j02
    Text: Ordering number:ENN3007 NPN Epitaxial Planar Silicon Transistor 2SC4365 VHF, UHF/MIX. OSC. Low-Voltage High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage operation : fT=3.0GHz typ VCE=3V : MAG=12dB typ (VCE=3V, IC=10mA) : NF=1.5dB typ (VCE=3V, IC=5mA)


    Original     		PDF ENN3007 2SC4365 2018B 2SC4365] J1 3007-1 J1 3007-2 2SC4365 ITR06656 ITR06657 ITR06658 ITR06659 ITR06660 F J1 3007-2 marking amplifier j02

    2SC4311

    Abstract: No abstract text available
    Text: • J4 v ¥ > 9 iV 7 Switching Power Transistor HDT series Outline Dimensions 6a 2SC4311 NPN (TP6V80HDT) Case : ITO -220 4.6*9-» 2.7*02 0.7±ti U n it • m m Absolute Maximum Ratings m Item te g n * Symbol Storage Temperature Junction Temperature 3 U 9 9 • '■<—X'ftEE


    OCR Scan     		PDF 2SC4311 TP6V80HDT) 0003b31 2SC4311

    matsua aluminium capacitors

    Abstract: Matsushita aluminium electrolytic capacitors ECA1CM102L electrolytic capacitor date code H60A H60S H63A aluminium electrolytic capacitor ECA0JM470 JV3L
    Text: Issu eN o , : IA J4 -1 J -0 5 -Û 3 S . Date o f Issue : OS*. N ovem ber, 2004 Classification : ItN e w Q C hanged Ö R evised PRODUCT SPECIFICATION Product Description Product Part Num ber Aluminium Electrolytic Capacitor A TYPE M SERIES


    OCR Scan     		PDF

    91fm

    Abstract: J4-39 J439
    Text: FMMJ4391 to FM M J4393 SOT23 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS PAR TM AR KIN G DETAILS: F M M J4 3 9 1 - C91 F M M J 4 3 9 2 - C 92 FM M J4393 - C 93 APPLICATION AREAS: * LOW ON RESISTANCE SW ITCHES * CHOPPERS ABSOLUTE M A X IM U M RATINGS at Tamb = 2 5 °C


    OCR Scan     		PDF J4393 FMMJ4391 J4393 J4392 J4391 DS169 91fm J4-39 J439

    transistor 86 y 87

    Abstract: No abstract text available
    Text: WJ-EA41 sBasm « « . ‘Al m ! , MIS _wt * j4* Se» '- .i I; 1000 to 4000 MHz TO-5 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ WIDE BANDWIDTH: 1000 TO 4000 MHz MEDIUM OUTPUT POWER: +12 dBm TYP. LOW NOISE: 3.5 dB (TYP.) MEDIUM THIRD ORDER INTERCEPT POINT: +23 dBm (TYP.)


    OCR Scan     		PDF WJ-EA41 transistor 86 y 87

    HP 450 opto coupler

    Abstract: rop 101 ap 4506 A 4506 igbt
    Text: ¥ h o \ HEW LETT mLEM P A C K A R D Intelligent Power Module and Gate Drive Interface Optocouplers HCPL-4506 h c p l-j4 5 6 HCPL-0466 HCNW 4506 Technical Data F eatu res • Performance Specified for Common IPM Applications over Industrial Temperature Range: -40°C to 100°C


    OCR Scan     		PDF HCPL-4506 HCPL-0466 HCPL-4506/0466 HCPLJ456 HCNW4506 HCNW4506) VDE0884 HP 450 opto coupler rop 101 ap 4506 A 4506 igbt

    HCNW4506

    Abstract: No abstract text available
    Text: Thpt H E W L E T T mL/ÍM P A C K A R D Intelligent Power Module and Gate Drive Interface Optocouplers HCPL-4506 h c p l-j4 5 6 HCPL-0466 HCNW4506 Technical Data Features • Performance Specified for Common IPM Applications over Industrial Temperature Range: -40°C to 100°C


    OCR Scan     		PDF HCPL-4506 HCPL-0466 HCNW4506 HCPL-4506/0466 HCPL-J456 HCPL-4506 HCNW4506

    Molectron Detector

    Abstract: molectron J3-09 J9119A molectron J3-05 J3S-10 Molectron j3 molectron J305 boxcar joulemeter
    Text: Features im iiiiiim J3/J4/J3S Series Pyroelectric/Silicon Joulemeter a Wide dynamic range fJ to J a High rep rate to 20 kHz a Large area to 1 cm2 a NIST traceable CAL in V/mJ and V/nJ a Spectral range UM, VIS, Far IR a Excellent EMI shielding a Use directly with oscilloscope


    OCR Scan     		PDF J3-05. JS25Q Molectron Detector molectron J3-09 J9119A molectron J3-05 J3S-10 Molectron j3 molectron J305 boxcar joulemeter

    Untitled

    Abstract: No abstract text available
    Text: 8368602 S O L I TRO N D E V I C E S , IN Q ^ b l D E olitron Devices, Inc, If lB b f lb D S e n p c o ts : S P E C I F I C A T I O N S Voltage, Collector to Base VCB0 I T r- ?i-i> NO.: Sa iva- TYPE: //p A / S J4 J& » / CASE: MAXIMUM RATINGS 5 00013^ 0 T 0 -3


    OCR Scan     		PDF

    J441

    Abstract: mosfet J442 IRFJ441 IRFJ442 IRFJ440 IRFJ443 MOSFET "CURRENT source" g581 9409A
    Text: HE D I 4Ô55455 □ 0Gcife»04 7 I • ■ Data Sheet No. PD-9.409A INTERNATIONAL R E C T I F I E R T IN T E R N A T I O N A L RECITI FIE R HEXFET TRANSISTORS !I«R IRFJ440 IRFJ441 N-CHANNEL POWER MOSFETs IRFJ442 IRFJ443 500 Volt, 0.85 Ohm HEXFET The HEXFET® technology is the key to International


    OCR Scan     		PDF T-39-11 IRFJ440 IRFJ441 IRFJ442 param12 G-585 IRFJ440, IRFJ441. IRFJ442, IRFJ443 J441 mosfet J442 IRFJ441 IRFJ442 IRFJ440 MOSFET "CURRENT source" g581 9409A

    Untitled

    Abstract: No abstract text available
    Text: BIPOLAR TRANSISTOR MODULES ' Ratings and Specifications jjfi 600 volts class high F ife — power transistor modules • Because this m o d u le has 10 tim e s or m o re th e con vention al DC cu rren t gain, set p ro p o rtio n a lly fo r each ele m en t


    OCR Scan     		PDF 2DI30M-050 6DI50M-050 6DI50MA 6DI75M-050 6DI75MA 6DI100M

    transistor 75 U50

    Abstract: 2DI50M-050 2DI100MA-050 2DI30M-050 M203 M208 M210 6DI100M-050
    Text: BIPOLAR TRANSISTOR M O DULES Ratings and Specifications 600 volts class high Fife power transistor modules • Because this m o d u le has 10 tim e s or m o re th e con vention al DC cu rren t gain, set p ro p o rtio n a lly fo r each ele m en t cu rren t capacity 75 to 300A , it is possible to m in iatu rize and standardize th e base drive circuit and drive p o w er supply.


    OCR Scan     		PDF 2DI30M-050 6DI30M 6DI30MA 6DI50M 6DI50MA 6DI100M 0DD3722 transistor 75 U50 2DI50M-050 2DI100MA-050 M203 M208 M210 6DI100M-050

    2DI100MA-050

    Abstract: 6DI100M050 6DI30MA-050 transistor TH 208
    Text: BIPOLAR TRANSISTOR MODULES Ratings and Specifications m 600 volts class high hFE power transistor modules • B eca use t h is m o d u l e has 10 t im e s o r m o r e t h e c o n v e n t i o n a l DC c u r r e n t ga in , set p r o p o r t i o n a l l y f o r ea ch e le m e n t


    OCR Scan     		PDF 6DI30M-050 6DI30MA-050 6DI50M-050 6DI50MA-050 6DI75M-050 6DI75MA-050 6DI100M-050 2DI100MA-050 6DI100M050 transistor TH 208