marking J3 sot23
Abstract: MARKING J3 SOT-23 marking J3 J3 SOT23 MARK J3 KDS2236S J3 SOT sot-23 Marking J3
Text: SEMICONDUCTOR KDS2236S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking J3 No. 1 Item Marking Device Mark J3 KDS2236S - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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KDS2236S
OT-23
R1998.
marking J3 sot23
MARKING J3 SOT-23
marking J3
J3 SOT23
MARK J3
KDS2236S
J3 SOT
sot-23 Marking J3
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TE28F640J3C-120
Abstract: 28F64J3 28f256j3c SL894 RC28F128J3C-150 SL897 28F128j3c TE28F640J3C120 sl896 28F320J3C
Text: Intel StrataFlash Memory J3 256-Mbit J3 Family Specification Update June 2005 The 28F256J3, 28F128J3, 28F640J3, and 28F320J3 may contain design defects or errors known as errata that may cause the product to deviate from published specifications. Current
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256-Mbit
28F256J3,
28F128J3,
28F640J3,
28F320J3
TE28F640J3C-120
28F64J3
28f256j3c
SL894
RC28F128J3C-150
SL897
28F128j3c
TE28F640J3C120
sl896
28F320J3C
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Untitled
Abstract: No abstract text available
Text: SDS20D Semiconductor Switching Diode HIGH VOLTAGE SWITCHING APPLICATIONS Features PIN Connection y Fast switching diode in case SOD-323 y For general purpose switching application 1 Ordering Information Device 2 Marking Code 1 Package J3 □ SDS20D 1. Anode
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SDS20D
OD-323
KSD-D6C024-000
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (Ta=25 ℃unless otherwise noted)
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OT-23
OT-23
S9013
S9012
500mA
500mA,
30MHz
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s9013 transistor
Abstract: J3 s9013 S9013 SOT-23 transistor S9013 S9013 data sheet transistor s9013 MARKING J3 SOT-23 S9012 J3 SOT23 marking J3
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
OT-23
S9013
S9012
500mA
500mA,
30MHz
s9013 transistor
J3 s9013
S9013 SOT-23
transistor S9013
S9013
data sheet transistor s9013
MARKING J3 SOT-23
S9012
J3 SOT23
marking J3
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S9013 SOT-23
Abstract: J3 s9013 transistor SOT23 J3 S9013 J3 s9013 transistor transistor S9013 s9013 s9013 transistor SOT23 J3 marking J3 MARKING J3 SOT-23
Text: S9013 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MARKING: J3 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units
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S9013
OT-23
OT-23
S9012
500mA
500mA,
30MHz
S9013 SOT-23
J3 s9013
transistor SOT23 J3
S9013 J3
s9013 transistor
transistor S9013
s9013
s9013 transistor SOT23 J3
marking J3
MARKING J3 SOT-23
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S9013 J3
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
OT-23
S9013
S9012
500mA
500mA,
30MHz
S9013 J3
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN SOT–23 FEATURES z High Collector Current. z Complementary to S9012. z Excellent hFE Linearity. 1. BASE MARKING: J3 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
S9013
S9012.
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Untitled
Abstract: No abstract text available
Text: DMA26404 Silicon PNP epitaxial planar type Unit: mm For digital circuits • Features Low collector-emitter saturation voltage VCE sat Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: J3 Basic Part Number
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DMA26404
UL-94
DRA2114Y
DMA264040R
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CHT9013PT
Abstract: h 033 marking J2 sot-23 MARKING J3 SOT-23 J1 TRANSISTOR J3 SOT-23 transistor SOT23 J1
Text: CHENMKO ENTERPRISE CO.,LTD CHT9013PT SURFACE MOUNT NPN Silicon Transistor VOLTAGE 25Volts CURRENT 0.5 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * HFE L :J3 * HFE(H):J2 * HFE(J):J1 .066 (1.70)
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CHT9013PT
25Volts
OT-23
OT-23)
120uA
100uA
CHT9013PT
h 033
marking J2 sot-23
MARKING J3 SOT-23
J1 TRANSISTOR
J3 SOT-23
transistor SOT23 J1
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CHT9013GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHT9013GP SURFACE MOUNT NPN Silicon Transistor VOLTAGE 25Volts CURRENT 0.5 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * HFE L :J3 * HFE(H):J2 * HFE(J):J1 .066 (1.70)
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CHT9013GP
25Volts
OT-23
OT-23)
120uA
100uA
CHT9013GP
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Untitled
Abstract: No abstract text available
Text: CYStech Electronics Corp. TO-252 Dimension C A Marking: D B G F L 3 H E K 2 I 1 J 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 *: Typical Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2520 0.2677 0.2125 0.2283
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O-252
UL94V-0
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TAG 8409
Abstract: ASTM d4066 ms3367 TC817 THOMAS BETTS TYZ528M TL075 MS3367-4-9 MS21266-2N MS3367-5-9 TYZ28M MS3367-6-0
Text: 412031.J01 TYRAP 3/12 3/14/03 11:15 AM Page 1 / Cable Fastening Systems Ty-Rap /Ty-Fast® Cable Tying System Overview .J2-J3 Ty-Rap® Cable Ties .J4-J8 Cable Ties for Special Environments .J9-J10
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J9-J10
J12-J13
J17-J19
TY910X
TY910-11
TY910-1
TY910-2
TY910-3
TY910-4
TY910-5
TAG 8409
ASTM d4066 ms3367
TC817
THOMAS BETTS TYZ528M
TL075
MS3367-4-9
MS21266-2N
MS3367-5-9
TYZ28M
MS3367-6-0
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Untitled
Abstract: No abstract text available
Text: Not Recommended for New Designs bq27505-J3 www.ti.com SLUS986A – OCTOBER 2009 – REVISED FEBRUARY 2010 System-Side Impedance Track Fuel Gauge 1 INTRODUCTION 1.1 FEATURES 1.2 • Battery Fuel Gauge for 1-Series Li-Ion Applications • Resides on System Main Board
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bq27505-J3
SLUS986A
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100D9103
Abstract: 100D91 j814 J8 N type
Text: A d v a n c e d R e l e a s e FEATURES MODEL NO. 100D9103 420 - 450 MHz 47 dB Directivity 100 dB Isolation Amplitude Tracking Phase Tracking MFD Switch Input MARKING AREA 7.00 2.00 3.00 J7 1.00 .25 J1 .75 4 X .253-.262 DIA THRU J4 J3 J7 .25 CONNECTOR, 15 PIN
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100D9103
M24308/3-2F
100D9103
100D91
j814
J8 N type
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100C9102
Abstract: marking j9 combiner
Text: A d v a n c e d R e l e a s e FEATURES MODEL NO. 100C9102 420 - 450 MHz 0.1dB Insertion Loss 100 dB Isolation SMA Connectors MFD Combiner 12 X CONNECTOR, SMA FEMALE .38 LONG TYP MARKING AREA J1 6.50 J3 2:1 COMBINER J6 2:1 COMBINER J9 2:1 COMBINER J12 J2 6.000
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100C9102
100C9102
marking j9
combiner
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murata filter cfm 455 d
Abstract: CFJ455K 13 murata filter cfj455k e10.7s CFWM 450 CFM455D cfj455K14 murata ceramic filter e10.7a cfj455k5 murata murata cfj 455
Text: FILTERS FOR AM APPLICATIONS 450–470kHz SFU/SFZ SERIES SFU450B14 for contact to IFT SFZ450HL3/JL3/KL3 SFZ450H3/J3/K3 (for contact to resistor) FEATURES • Center frequency range between 450 and 470kHz is available. Standard tolerance is ±2kHz. ■ For synthesizers, the types of center
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470kHz
SFU450B14
SFZ450HL3/JL3/KL3
SFZ450H3/J3/K3
470kHz
468kHz
450kHz)
SFU450A3
SFU450C5
SFU455A/C5/B
murata filter cfm 455 d
CFJ455K 13
murata filter cfj455k
e10.7s
CFWM 450
CFM455D
cfj455K14
murata ceramic filter e10.7a
cfj455k5 murata
murata cfj 455
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Untitled
Abstract: No abstract text available
Text: LDVER RDW ELECTRICAL SPECIFICATIONS* l.D TURNS RATIO P 1-P E-P3 i (J1 -J2 ) CP 4-P 5 -P 6) ; (J3 -J6 > 2.0 INDUCTANCE <P6-P4> (P3-PL) 3.0 LEAKAGE INDUCTANCE P 6 -P 4 (WITH J6 AND J3 SHDRT) P3-P1 (WITH J2 AND JL SHDRT) 4.0 INTERW INDING CAPACITANCE CP6.P5.P4) TD (J6,J3)
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350uH
CT720112
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35NAG
Abstract: td 6d01
Text: LDWER ROW <D <£> <£> £> ELECTRICAL SPECIFICATIONS: 1.Û TURNS RATIO (PL-P2-P3 i CJ1-J2) (P 4-P 5-P6 ) i CJ3-J6) 2.0 INDUCTANCE (P6-P4) (P3-P1) 3.0 LEAKAGE INDUCTANCE P6-P4 <V1TH J6 AND J3 SHDRT) P3-P1 (WITH JE ANI J1 SHDRT) 4.Û INTERWINDING CAPACITANCE (P6,P5,P4) TD (J6,J3>
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350uH
CT720114
ST-30083
35NAG
td 6d01
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Untitled
Abstract: No abstract text available
Text: 1CT : 1CT J1 TD+ J2 TD- J3 RD+ J4 J5 J6 RD- J7 J8 lOOOpF, 2 K V ELECTRICAL SPECIFICATIONS: 1 .0 TURNS RATIO: P 3 -P 7 -P 6 : (J3-J6 ) (P 1 -P 4 -P 5 -P 2 ) : (J1-J2 ) 1 CT 1 CT 2 .0 INDUCTANCE: 3 .0 LEAKAGE INDUCTANCE: (P 3 -P 6 ) (J1-J2 ) 400uH 400uH MIN.
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400uH
400uH
I-70005
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ni usb 6501
Abstract: NI 6501 RJ45 USB RJ45 usb connector
Text: 1CT : 1CT J1 J2 J3 J4 J5 J6 J7 J8 lO O O p F , TD + TDRD+ RD- 2 K V N DT E S 1,0 P I N S V I T H D U T E L E C T R I C A L CONNECTION ARE EMITTED, ELECTRICAL SPECIFICATIONS: 1.0 TU RNS RATIO: P 7 - P 6 - P 8 (P 1 -P 3 -P 2 ) : (J3 -J6 ) : (J1 -J2 ) 2.0
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350uH
100KHz,
ni usb 6501
NI 6501
RJ45 USB
RJ45 usb connector
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113 marking code PNP transistor
Abstract: 113 marking code transistor 2SB852K T146 transistor PNP transistor 2SB
Text: 2SB852K Transistor, PNP, Darlington pair Features Dimensions U n its : mm available In SMT3 (SMT, SC-59) package 2SB852K (SMT3) package marking: 2SB852K; (-)★ where ★ is hFE code 0.8 * 0. Darlington connection provides high DC current gain (hFE) fl J3
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2SB852K
SC-59)
2SB852K;
2SB852K
2SB852K,
113 marking code PNP transistor
113 marking code transistor
T146
transistor PNP
transistor 2SB
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m8340109k
Abstract: M8340107M M8340107K M83401-08/M1000JC M8340108M M83401
Text: THICK FILM MILITARY QUALIFIED MOLDED SIPs/LOW PROFILE • Molded package is compatible with automatic insertion equipment ■ Low profile is compatible with DIPs p o x jR is r s Models M83401-07/M83401-08/M83401 -09 J3"' Resistor Network CHARACTERISTICS 24.99
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M83401-07/M83401-08/M83401
100ppm/
000MegQ
300ppm/
4306R-102-RC
4306R-101-RC
4308R-102-RC
M8340108KXXXXGC
M8340108KXXXXJC
M8340108MXXXXGC
m8340109k
M8340107M
M8340107K
M83401-08/M1000JC
M8340108M
M83401
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TRANSISTOR BI 187
Abstract: sot-23 npn marking code cr TRANSISTOR BC 187 BUV71 bc 187 npn transistor TRANSISTOR BI 237 on BC 187 TRANSISTOR telefunken ta 750 12A3 T0126
Text: L 1 TELEFUNKEN ELECTRONIC 17E D • ô'téOO'ib 000*5571 0 . BUV71 m S F M IM electronic CrMiiwltchnofogw» T-S3-J3 Silicon NPN Power Transistors Applicâtions: Motor controls, switching mode power supplies Features: • Implantation • High reverse voltage
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BUV71
T0126
15A3DIN
TRANSISTOR BI 187
sot-23 npn marking code cr
TRANSISTOR BC 187
BUV71
bc 187 npn transistor
TRANSISTOR BI 237
on BC 187 TRANSISTOR
telefunken ta 750
12A3
T0126
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