Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT ¿XPD29F016L 16M-BIT CMOS LOW-VOLTAGE FLASH MEMORY 2M-WORD BY 8-BIT Description The ^¡PD29F016L is a low-voltage 2.2 to 2.7 V, 2.7 to 3.6 V flash memory organized as 16,777,216 bits (2,097,152
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uPD29F016L
16M-BIT
PD29F016L
40-pin
J1V0DS00
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ ¡jP D 4416001 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT Description The ,uPD4416001 is a high speed, low power, 16,777,216 bits 16,777,216 words by 1 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V (A version) or 2.5 V ± 0.125 V (C version).
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16M-BIT
16M-WORD
uPD4416001
PD4416001
54-pin
PD4416001G
5-A12-9JF
5-A15-9JF
PD4416001G5-C12-9JF
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IEU-1372
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿1PD78011H, 78012H, 78013H, 78014H 8-BIT SINGLE-CHIP MICROCONTROLLER D E S C R IP T IO N The ¿¿PD78011 H, 78012H, 78013H, and 78014H are the products in the /¿PD78014H subseries w ithin the 78K/0 series. Com pared with the older /¿PD78018F subseries, this subseries reduces the EMI Electro M agnetic Interface noise
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uPD78011H
uPD78012H
uPD78013H
uPD78014H
PD78011
78012H,
78013H,
78014H
PD78014H
78K/0
IEU-1372
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transm itter applications for X, Kuband microwave communication systems.
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NE960R5
NE961R500
NE960R500
NE960R575
NE962R575
P14387E
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT ¿¿PD488448, 488488 128/144 M-bit Direct Rambus DRAM Description The Direct Rambus DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including com puter memory, graphics, video, and any other application where
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PD488448,
JUPD488448
128M-bit
PD488488
144M-bit
14072EJ1V0D
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT LCD CONTROLLER/DRIVER WITH ON-CHIP 1/65 DUTY RAM DESCRIPTION The ,uPD16682 is a LCD driver that includes enough RAM capacity to drive full-dot LCD displays. Each chip can drive a full-dot LCD display consisting of up to 132 x 65 dots.
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uPD16682
S13368E
J1V0DS00
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-nolse, hlgh-gain amplification applications • N F = 1.1 dB,
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2SC5508
2SC5508-T2
Rn/50
13865E
J1V0DS00
0DS00
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /iP D 4 3 8 2 16 1,4382181,4382321,4382361 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The ,uPD4382161 is a 524,288-word by 16-bit, the ,uPD4382181 is a 524,288-word by 18-bit, the ,uPD4382321 is a
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uPD4382161
288-word
16-bit,
uPD4382181
18-bit,
uPD4382321
144-word
32-bit
uPD4382361
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transistor NEC D 586
Abstract: NEC D 586
Text: PRELIMINARY DATA SHEET_ HETERO JUNCTION FIELDEFFECT TRANSISTOR NE321000, NE29200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION The NE321000 and NE29200 are Hetero Junction FET that utilizes the hetero junction to create high mobility
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NE321000,
NE29200
NE321000
NE29200
NE321000
P14270E
transistor NEC D 586
NEC D 586
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ ¡j P D 4 4 1 6 0 0 8 16M-BIT CMOS FAST SRAM 2M-WORD BY 8-BIT Description The ,uPD4416008 is a high speed, low power, 16,777,216 bits 2,097,152 words by 8 bits CMOS static RAM.
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16M-BIT
uPD4416008
PD4416008
54-pin
PD4416008G5-A12-9
PD4416008G5-A15-9
PD4416008G5-C12-9J
PD4416008G5-C15-9J
S54G5-80-9JF-1
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ GaAs INTEGRATED CIRCUIT ¿XPG181GR GaAs MMIC DBS Twin IF Switch DESCRIPTION The ^¡PG181GR is intended for use in Direct Broadcast Satellite DBS applications within the Low Noise Block (LNB) down-converter for systems where at least two LNB outputs are required.
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XPG181GR
PG181GR
16-pin
C10535E)
14268E
0DS00
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 2.4G bps ATM SONET FRAMER The ,uPD98414 NEASCOT-P70 is one of ATM LSIs and provides the functions of the TC sublayer of the SONET/SDH-base physical layer of the ATM protocol specified by the ATM Forum.
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uPD98414
NEASCOT-P70â
OC-48c/SDH
STM-16
14242E
0DS00
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _¡jP D 4 4 1 6 0 0 4 16M-BIT CMOS FAST SRAM 4M-WORD BY 4-BIT Description The ,uPD4416004 is a high speed, low power, 16,777,216 bits 4,194,304 words by 4 bits CMOS static RAM.
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16M-BIT
uPD4416004
PD4416004
54-pin
PD4416004G5-A12-9
PD4416004G5-A15-9
PD4416004G5-C12-9J
PD4416004G5-C15-9J
S54G5-80-9JF-1
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226BH
Abstract: it27
Text: P R E LIM IN A R Y DATA S H EE T_ MOS INTEGRATED CIRCUIT AIPD29F800AL 8M-BIT CMOS LOW-VOLTAGE FLASH MEMORY 1M-WORD BY 8-BIT BYTE M O D E /512K-WORD BY 16-BIT (WORD MODE) Description The ^¡PD29F800AL is a low-voltage (2.2 to 2.7 V, 2.7 to 3.6 V) flash memory organized as 8,388,608 bits in 19
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uPD29F800AL
/512K-WORD
16-BIT
PD29F800AL
48-pin
14140EJ1V0D
226BH
it27
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT u P C 8 1 2 6 K 900 MHz BAND DIRECT QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS DESCRIPTION The ^¡PC8126K is a silicon monolithic integrated circuit designed as quadrature modulator for digital mobile
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PC8126K
20-pin
28-pin
IR35-00-2
C10535E)
13488E
J1V0DS00
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET Solid State Relay OCMOS FET PS7241H-1A 4-PIN SOP HIGH ISOLATION VOTAGE 3 750 Vr.m.s. 1-ch Optical Coupled MOS FET DESCRIPTION T he P S 7 2 4 1 H -1 A is a solid s ta te relay con ta in in g G aA s LED s on the light em ittin g sid e (in pu t side) and M O S
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PS7241H-1A
P14475E
J1V0DS00
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿ P D 4 5 1 2 8 4 4 1 - A 7 5 , 4 5 1 2 8 8 4 1 - A 7 5 128M-bit Synchronous DRAM, 133MHz 4-bank, LVTTL Description The ^¡PD45128441-A75, 45128841-A75 are high-speed 134,217,728-bit synchronous dynam ic random-access
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128M-bit
133MHz
PD45128441-A75,
45128841-A75
728-bit
54-pin
14030EJ1V
0DS00
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ HETERO JUNCTION FIELD EFFECT TRANSISTOR NE4210S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.
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NE4210S01
NE4210S01
NE4210S01-T1
NE4210onditions.
IR30-00-1
14232E
0DS00
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current
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2SC5507
2SC5507-T2
Rn/50
P13864E
13864E
J1V0DS00
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ GaAs INTEGRATED CIRCUIT ¿ iP G 1 5 8 T B L, S- BAND SPDT SWITCH DESCRIPTION The ^¡PG158TB is a L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band w ireless application. The device can operate from 500 MHz to 2.5
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uPG158TB
IR35-00-3
14267E
J1V0DS00
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