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    J 2N930 Price and Stock

    Microchip Technology Inc Jantx2N930

    Bipolar Transistors - BJT Small-Signal BJT
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    Mouser Electronics Jantx2N930 214
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    Microchip Technology Inc Jan2N930

    Bipolar Transistors - BJT Small-Signal BJT
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    Mouser Electronics Jan2N930 101
    • 1 $10.08
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    Microchip Technology Inc Jantxv2N930

    Bipolar Transistors - BJT Small-Signal BJT
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    Microchip Technology Inc JAN2N930UB/TR

    Bipolar Transistors - BJT Small-Signal BJT
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    Microchip Technology Inc JANTX2N930UB/TR

    Bipolar Transistors - BJT Small-Signal BJT
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    J 2N930 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    J 2N930 Thomson-CSF Condensed Data Book 1977 Scan PDF
    J2N930 Thomson-CSF Condensed Data Book 1977 Scan PDF
    J.2N930 Thomson-CSF Condensed Data Book 1977 Scan PDF

    J 2N930 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N65s

    Abstract: 2n907 2N936 2N797 2N706 2N906 2N777 2N945 2N964 2N555
    Text: DIGITRÔN ELECTRONIC CORP 3bE D • 2ñ4St.D7 OOGOOGS 7 ■ • qj DGE'-p Page t,6Î - DIQITRON ELECTRONIC« #2 CORE 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax J O H N J. S C H W A R T Z


    OCR Scan     		PDF 204EbD7 2N497AI 2N539 2N696A 2N728 2N871 2N922 2N498 2N539A 2N697 2N65s 2n907 2N936 2N797 2N706 2N906 2N777 2N945 2N964 2N555

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF

    2n2301

    Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
    Text: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74


    OCR Scan     		PDF 2N727 2N869A 2N929A 2N930' 2N930A 2N1572 2N1S73 2N1574 2N24S3 2N2484 2n2301 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815

    2N9308

    Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
    Text: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5


    OCR Scan     		PDF 00DDS7Ã T-A7-01 2N497 12/3S 30/S9 2N3725A 2N3947 2N4080 2N4137 2N4207 2N9308 2N221BA 2N69S 2N3304 2M2193 2NI893 2N236S 2N408 2N238

    BCY591

    Abstract: BC109C pin configuration 2N718 pin configuration 2N706 BC107C bcy59-7 BC107c pin 2n815 2N25 BC107 pin configuration
    Text: PIN CONFIGURATION 1. Emitter 2. B ase 3. Collector DIM MIN MAX A 5,24 5,84 B 4,52 4,97 C 4,31 5,33 D 0,40 0,53 E - F - 1,27 G - 2,97 0,76 H 0,91 1,17 J K 0,71 1,21 L 45D EG 12,7 - ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN Maximum Ratings


    OCR Scan     		PDF BCY59-10 BFY76 BSX21 BSX48 BSY79 CIL351 CIL352 BCY591 BC109C pin configuration 2N718 pin configuration 2N706 BC107C bcy59-7 BC107c pin 2n815 2N25 BC107 pin configuration

    C495 transistor

    Abstract: BF194 2N4996 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495
    Text: Silect High Frequency Transistors Maximum Ratings Device Type Case outline B V PTOT in brackets CBO ic S j o < hFE Ic BF594 (9) V V mA mW 30 20 30 250 V 1 10 BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38 2N4996 (2) T1S02A (2) 30 30 18 50 12 30 250


    OCR Scan     		PDF BF594 BF594, BF194 BF595 BF195 BF597 BF197 2N4996 BS9300 2N2219A C495 transistor BF194 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495

    MPSA18 BC550

    Abstract: marking 2C marking 2D BC846 National Semiconductor Discrete catalog MPSA18 BC558 BC184 BC550 tr bc548 2N3117 bc857 to 92 2N5210 national
    Text: . Low Noise Am plifiers t,8E J> r Device VcEQ «l>t (Volte) Min 65 NPN Min Max BC546 110 450 BC846 110 300 Typ T0-92(97) 1,2C 10 300 Typ TO-236* 1,2C Notes 2 75 475 2 10 300 Typ TO-92(97) 1,2C 475 2 10 300 Typ TO-236* 1,2C 100 500 0.01 3 60 2N2484 TO-18 2F


    OCR Scan     		PDF LSD113D 0D3152M BC546 T0-92 BC846 O-236* BC556 BC856 2N2484 MPSA18 BC550 marking 2C marking 2D BC846 National Semiconductor Discrete catalog MPSA18 BC558 BC184 BC550 tr bc548 2N3117 bc857 to 92 2N5210 national

    bcy5b

    Abstract: BCY591 BC179C BSX21 BC177C BCY581 2N708 2N718 2N718A 2N720
    Text: I— B PIN C O N FIG UR ATIO N 1. Emitter 2. Base 3. C ollector DIM MIN M AX A 5,24 5,84 B 4,52 4,97 C 4,31 5,33 D 0 ,40 0,53 E - 0,76 F - 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45D E G ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN


    OCR Scan     		PDF 45DEG Tas25Â 2N706A BCY79-9 BCY79-10 BFX37 CF103 bcy5b BCY591 BC179C BSX21 BC177C BCY581 2N708 2N718 2N718A 2N720

    Untitled

    Abstract: No abstract text available
    Text: 5LE J> m m057& 000btitiS 332 • ZETB^'2 '*7' 0 { NPN LOW LEVEL ZETEX SEMICONDUCTORS Type V CB V ceo V M ax lc V mA M a x V CE sat at V k mA Min f-jat hFE at !b Min M ax 'c m A MHz mA mA Continued P.ot at =ta Package Comple­ ment mW 2N3053 60 40 700 1.4


    OCR Scan     		PDF 000bt 2N3053 2N696 2N697 BFY51 BSY51 BSY52 BC107 BCY59 BCY56

    Untitled

    Abstract: No abstract text available
    Text: CRIMSON S E M I C O ND UC TO R INC TT •.~>=. •^^ - 2514096 CRIMSON SEMICONDUCTOR 99 D 0 0 2 9 2 D DfViCE TYPl PACKAGE BVCEO BVCBO BVEBO ICBO @ VCB V i M IN IVI M IN (VI M IN («IAI M A X |V| De ( E s m o ^ b INC ' J ~ — 3 & - c>'i COB fT Nf tp tl U A f t


    OCR Scan     		PDF 2N656 2N697 2N699 2N703 2N706 2N708 2N709 2N720 2N722 2N930

    UM9C

    Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651
    Text: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma


    OCR Scan     		PDF DDDQS16 2N2242 2N2368 2N2369 2N2369A 2N2410 N2475 2N2481 2N2501 2N2651 UM9C J 2N930 2N2651

    BSX21

    Abstract: BC107C BC10B 2N718 pin configuration 2N915 BC109C pin configuration bfy76 BSY79 BC-108 2N2221A
    Text: TO-18 P IN C O N F I G U R A T I O N 1. E m itte r 2. B a s e 3. C o lle c to r DIM MIN A 5,24 MAX 5,84 B 4,52 4,97 C 4,31 5,33 D 0,40 0,53 E - F - 0,76 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45 DEG ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN


    OCR Scan     		PDF BCY59-9 BFY76 BSX21 BSX48 BSY79 CIL351 CIL352 BSX21 BC107C BC10B 2N718 pin configuration 2N915 BC109C pin configuration BC-108 2N2221A

    Untitled

    Abstract: No abstract text available
    Text: PLESSEY SEI1IC0ND/DISCRETE | TS DÌf| 752D533 O D D ^ E S 3 95D 04925 7 2 2 0 5 3 3 P L E S S E Y S E M I C O N D /D I S C R E T E T? Z D L .J NPN LOW NOISE TABLE 5 - NPN SILICON PLANAR LOW NOISE TRANSISTORS i The transistors shown in this table are characterised for low noise, low level amplification and are particularly


    OCR Scan     		PDF 752D533 2N2907A ZT181 BCY58 BC109 BCY78 ZT187 30-15K BC179

    Untitled

    Abstract: No abstract text available
    Text: TO-18 - A • T o P IN C O N F IG U R A T IO N 1. E m itte r 2. B a s e 3 . C o lle c to r DIM MIN A 5,24 5,84 B 4,52 4,97 MAX C 4,31 5,33 D 0,40 0,53 0,76 E - F - 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 L 45 DEG - ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN


    OCR Scan     		PDF 2N2221 BSX48 CIL352 BSX21 BFY76 BCY59-9 BCY59-8 BCY59-7 BCY59-10 BCY59

    JIDC

    Abstract: No abstract text available
    Text: SE M IC O N D U C T O R TECHNICAL DATA 2N930JAN, JTX Processed per MIL-S-19500/253 NPN Silicon Sm all-Signal Transistor CRYSTALOWCS 2805 Veterans Highway Suite 14 designed fot i o * powuf am putar applicano* RonkOTkOfTì*. N.Y. 11779 MAXIMUM R A T IN G S


    OCR Scan     		PDF 2N930JAN, MIL-S-19500/253 -65IO200 JIDC

    sf317

    Abstract: SCR 2N1595
    Text: PQWEREX INC 74 DE I 7 2 ^ 4 ^ 5 3 DDP1341 SCR ÖT T-i$' // ” I 2 N 1 5 9 5 -9 9 I 2N929 S E E GES929 2N930 S E E GES930 The 2N1595 series of Silicon Controlled Rectifiers are planar-passivated, all-diffused, three junction, reverse blocking triode thyristors for low power switching and con­


    OCR Scan     		PDF DDP1341 2N929 GES929 2N930 GES930 2N1595 2N2322 sf317 SCR 2N1595

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA 2N930. NPN Silicon Small-Signal Transistor CR Y S TA IO N C S 2805 veterww Highway Veterans Hij Suite 14 designad for low power amplifier applications. Ronkonkoma, N.Y. 11778 MAXIMUM RATINGS Symbol Valu« Collector-Emitter Voltage


    OCR Scan     		PDF 2N930.

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON R!tlD EæilLI(g'iri iD(SS 2 N930 LOW-LEVEL, LOW -NOISE AMPLIFIERS D E S C R IP T IO N The 2N930 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case, designed for use in high performance, low-level, low-noise ampli­ fier applications.


    OCR Scan     		PDF 2N930

    2N930

    Abstract: No abstract text available
    Text: 2N930, A M A X IM U M RATINGS Symbol 2N930 2N930A Unit C o lle cto r-E m itte r Voltage VCEO 45 45 Vdc C ollector-B ase V o ltage VCBO 45 60 Vdc Em itter-Base V o ltage vebo 5.0 6.0 Vdc Rating lC 30 m A dc Ty\ = 25cC Pd 0.5 3.33 W m W /T T o ta l Device D issipa tion a T q = 25°C


    OCR Scan     		PDF 2N930, 2N930 2N930A O-206AA)

    2n930

    Abstract: 2N930A A-2N930
    Text: 2N930, A M AXIM U M RATINGS R a tin g Sym bol 2N930 2N930A U n it v CEO 45 45 Vdc C o lle cto r-E m itte r V o lta g e C o lle cto r-B ase V olta g e v CBO 45 60 Vdc E m itte r-B a se V olta g e v EBO 5.0 6.0 Vdc C o lle c to r C urrent >C 30 m Adc To tal D evice D issip a tio n @ T a = 25°C


    OCR Scan     		PDF 2N930, 2N930 2N930A O-206AA) 3b7554 b3b7554 2n930 2N930A A-2N930

    Untitled

    Abstract: No abstract text available
    Text: 3QE D 7^237 0031101 3 T ' Z \ - \ 1 Gl SCS-THOMSON 2N930 me S G S-THOMSON LOW-LEVEL, LOW-NOISE AMPLIFIERS DESCRIPTIO N The 2N930 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case, designed for use in high performance, low-level, low-noise am­


    OCR Scan     		PDF 2N930 2N930

    Untitled

    Abstract: No abstract text available
    Text: Illl = ^ = Illl SEME 2N930CSM LAB HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA D im e nsio ns in mm inches FEATURES 0.51 ±0.10 (0.02 ±0.004)


    OCR Scan     		PDF 2N930CSM 30MHz 10Hzto

    2N930

    Abstract: 2N930A
    Text: Boca Semiconductor Corp. BSC 2N930, A M A X IM U M RATINGS Sym bol 2N930 2N930A U n it C o lle c t o r - E m it t e r V o lta g e VCEO 45 45 Vdc C o lle c to r - B a s e V o lta g e VCBO 45 60 Vdc E m itt e r - B a s e V o lta g e V e BO 5.0 6 .0 R a tin g


    OCR Scan     		PDF 2N930 2N930A 2N930, O-206AA)

    2N930

    Abstract: No abstract text available
    Text: 3QE ]> 7 t 2 clS37 0 0 3 1 1 0 1 3 SCS-THOMSON ^ D O S ] ll L i ( g lF [ R ] ( Q ) K ! l D Û S S G S-THOMSON LOW-LEVEL, LOW-NOISE AMPLIFIERS D E S C R IP T IO N The 2N930 is a silicon planar epitaxial NPN transistor in Jedec TO -18 metal case, designed for


    OCR Scan     		PDF 2N930 2N930