BF456
Abstract: 2sc1941k 2SC34230 2SC2682P 2SC3271 to92 nec RF package SOT89 BF254 BF179A 2SC225 2SC2682E
Text: RF POWER SILICON NPN Item Number Part Number I C S 10 Manufacturer 20 25 30 35 40 45 50 BF179A BF179A BF179A BF179B BF179B BF179B BF179C BF179C BF179C -zsDT463 MM3002 ST3002 MM3003 2SC2632 2SC2633 2N706 2N706A 2N706B 2N706C 2SC34230 2SC3423Y 2SC1012 2SC1012A
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2SC3424
TBF869
TBF871
2SC1940K
2SC1940L
2SC1940M
2SC2780
2SC1941K
2SC1941L
BF456
2SC34230
2SC2682P
2SC3271 to92
nec RF package SOT89
BF254
BF179A
2SC225
2SC2682E
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2N65s
Abstract: 2n907 2N936 2N797 2N706 2N906 2N777 2N945 2N964 2N555
Text: DIGITRÔN ELECTRONIC CORP 3bE D • 2ñ4St.D7 OOGOOGS 7 ■ • qj DGE'-p Page t,6Î - DIQITRON ELECTRONIC« #2 CORE 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax J O H N J. S C H W A R T Z
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204EbD7
2N497AI
2N539
2N696A
2N728
2N871
2N922
2N498
2N539A
2N697
2N65s
2n907
2N936
2N797
2N706
2N906
2N777
2N945
2N964
2N555
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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Untitled
Abstract: No abstract text available
Text: RAY THE ON/ SEM IC O N D U C T OR 7597360 "TM RAYTHEON. D Ë J 75=1731.0 0005551 b SE M IC O N D U C T O R 94D Product Specifications Small Signal Transistors 0555 1 D 712S~-/3~ C J N PN Raytheon Ultra High Speed Switches CJ NPN Description High speed gold doped silicon epitaxial tran
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100mA.
2N2369A/JAN
2N4137
2N706A
2N2368
27BSC
-050BSC
54BSC
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1N5411
Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal
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CON-46
O-104
14-Lead
16-Lead
12-Lead
16-Lead
O-220AB
1N5411
npn transistor RCA 467
CD4004T
CA3051
CD4001D
40468A
RCA 40822
40664 SCR
rca 40583
2N5756
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BCY591
Abstract: BC109C pin configuration 2N718 pin configuration 2N706 BC107C bcy59-7 BC107c pin 2n815 2N25 BC107 pin configuration
Text: PIN CONFIGURATION 1. Emitter 2. B ase 3. Collector DIM MIN MAX A 5,24 5,84 B 4,52 4,97 C 4,31 5,33 D 0,40 0,53 E - F - 1,27 G - 2,97 0,76 H 0,91 1,17 J K 0,71 1,21 L 45D EG 12,7 - ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN Maximum Ratings
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BCY59-10
BFY76
BSX21
BSX48
BSY79
CIL351
CIL352
BCY591
BC109C pin configuration
2N718 pin configuration
2N706
BC107C
bcy59-7
BC107c pin
2n815
2N25
BC107 pin configuration
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bcy5b
Abstract: BCY591 BC179C BSX21 BC177C BCY581 2N708 2N718 2N718A 2N720
Text: I— B PIN C O N FIG UR ATIO N 1. Emitter 2. Base 3. C ollector DIM MIN M AX A 5,24 5,84 B 4,52 4,97 C 4,31 5,33 D 0 ,40 0,53 E - 0,76 F - 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45D E G ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN
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45DEG
Tas25Â
2N706A
BCY79-9
BCY79-10
BFX37
CF103
bcy5b
BCY591
BC179C
BSX21
BC177C
BCY581
2N708
2N718
2N718A
2N720
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2N2368
Abstract: 2N2475 2n2369 2N2476 2N2220 N2904 2N2218 2N2219 2N2221 2N2222
Text: NPN SW ITCHING - continued Type Max VcEO lc V mA Max VcE sat at V hFE >C mA >B mA Min at Max 'c mA Switching Times (Max) at f j Min at lc MHz mA toff ns ton ns lc Package Comple ment mA 30 1000 0 -35 150 15 40 150 50 50 55* 360* 150 TO-39 2N2218 30 800 0 -4
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BFY51
2N2218
N2904
2N2219
2N2905
2N2220
2N2221
N2906
2N2222
2N2907
2N2368
2N2475
2n2369
2N2476
N2904
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Untitled
Abstract: No abstract text available
Text: 5LE J> m m057& 000btitiS 332 • ZETB^'2 '*7' 0 { NPN LOW LEVEL ZETEX SEMICONDUCTORS Type V CB V ceo V M ax lc V mA M a x V CE sat at V k mA Min f-jat hFE at !b Min M ax 'c m A MHz mA mA Continued P.ot at =ta Package Comple ment mW 2N3053 60 40 700 1.4
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000bt
2N3053
2N696
2N697
BFY51
BSY51
BSY52
BC107
BCY59
BCY56
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2n2301
Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
Text: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74
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2N727
2N869A
2N929A
2N930'
2N930A
2N1572
2N1S73
2N1574
2N24S3
2N2484
2n2301
2N4001 diode
d880
2N3051
2N2B31
2N125 Ti
D880 NPN
2N70j
transistor d880
2N1815
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Untitled
Abstract: No abstract text available
Text: CRIMSON S E M I C O ND UC TO R INC TT •.~>=. •^^ - 2514096 CRIMSON SEMICONDUCTOR 99 D 0 0 2 9 2 D DfViCE TYPl PACKAGE BVCEO BVCBO BVEBO ICBO @ VCB V i M IN IVI M IN (VI M IN («IAI M A X |V| De ( E s m o ^ b INC ' J ~ — 3 & - c>'i COB fT Nf tp tl U A f t
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2N656
2N697
2N699
2N703
2N706
2N708
2N709
2N720
2N722
2N930
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2N702
Abstract: 2N834 MPS3564 MPS914 2N744 2N3011 2N5224 2N835 2N743 2N914
Text: MOTOROLA I SC -CDIODES/OPTOJ- 6367255 MOTOROLA SC 34 D Ü j|fc .3 h 7 E 5 S D IO D E S /O P TO 34C □ U ^ Ï T r '5 37975 "I D T'35-J5 SILICO N SM A LL-SIG N A L TR A N SISTO R DICE (continued) 2C2369A DIE NO. — NPN LINE SOURCE — DMB103 This die provides performance similar to that of the following device types:
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35-J5
DMB103
2N702
2N703
2N706
2N708
2N743
2N744*
2N753*
2N834
MPS3564
MPS914
2N744
2N3011
2N5224
2N835
2N914
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BSX21
Abstract: BC107C BC10B 2N718 pin configuration 2N915 BC109C pin configuration bfy76 BSY79 BC-108 2N2221A
Text: TO-18 P IN C O N F I G U R A T I O N 1. E m itte r 2. B a s e 3. C o lle c to r DIM MIN A 5,24 MAX 5,84 B 4,52 4,97 C 4,31 5,33 D 0,40 0,53 E - F - 0,76 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45 DEG ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN
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BCY59-9
BFY76
BSX21
BSX48
BSY79
CIL351
CIL352
BSX21
BC107C
BC10B
2N718 pin configuration
2N915
BC109C pin configuration
BC-108
2N2221A
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Untitled
Abstract: No abstract text available
Text: SbE m T> ^7057fl NPN SWITCHING Type BFY51 Max V CEO 'c 0 0 0 b ^ 6 ZETEX S E M I C O N D U C T O R S Continued M ax V CE sat at hFE 'b Min M ax 40 V •c V mA mA mA 30 1000 0.35 150 15 041 « Z E T B " F i b S ~ C > j fT Min at at - Switching times (Max.) at
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7057fl
BFY51
2N2218
2N2904
2N2219
2N2905
2N2221
2N2369A
2N2368
2N2369
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BCY79-9
Abstract: bcy791 BcY591 BSX21 2N706 BC107C BC109C pin configuration 2N706A 2N718A 2N720
Text: TO-18 h - B -h ! o PIN C O N F IG U R A T IO N 1. Em itter 2. B a s e 3. Co llector DIM MIN A 5 ,2 4 M AX 5 ,8 4 B 4 ,5 2 4 ,9 7 C 4,31 5 ,3 3 D 0 ,4 0 0 ,5 3 0 ,7 6 E - F - 1,27 G - 2 ,9 7 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45 D E G ALL DIMENSIONS ARE IN M.M.
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2N706
2N706A
BCY79-9
BCY79-10
BFX37
CF103
23fl33cm
000135T
BCY79-9
bcy791
BcY591
BSX21
BC107C
BC109C pin configuration
2N718A
2N720
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2N8772
Abstract: 2N877-81 2N706 2N877 2N878 2N885 2N886 GES706 2N885-889 12 volts 6 Ampere power supply
Text: 2N706 S E E GES706 SCR 2N877-81 2N885-89 F E A T U R E S: • A ll-d iffu se d for P ro v e d R e liab ility • M in ia tu re P a c ka ge T O -1 8 • Tw o R a n g e s o f G a te Se n sitivity: 2 N 8 7 7 -8 8 1 - 2 0 0 u a max. 2 N 8 8 5 -8 8 9 — 2 0 u a max.
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2N877-881
2N885-889
2N877-881
2N706
GES706
2N877-81
2N885-89
2N877,
2N885
2N8772
2N877-81
2N877
2N878
2N886
GES706
2N885-889
12 volts 6 Ampere power supply
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ILS 404 CB
Abstract: 2n706 transistor transistor array K1 marking 3001 8AT transistor 2n706
Text: MIL-S-19500/120C 15 April iyTO SUPERSEDING MIL-S-19500/120B 26 June 1063 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, LCW-PCWER TYPE 2N706 This specification Is mandatory fo r use by all De^ partm ents and Agencies of the Department of Defense.
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MIL-S-19500/120C
MIL-S-19500/120B
2N706
MIL-S-19500
ILS 404 CB
2n706 transistor
transistor array K1 marking
3001 8AT
transistor 2n706
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2N706
Abstract: 2N706A J 2N706 2N706AB 2N706B 2N706 JAN 2N2368
Text: MOTOROLA SC XSTRS/R F D | b3b72SM OOflbait. 1 | M A X IM U M R A T IN G S R ating Collector-Em itter V olta g e 2N 706A,B C ollector-E m itter Voltag eO C o llector-Base V olta g e Em itter-Base V olta g e 2N706 2N 706A 2N706B C o llector Current 2N706AB
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2n706a
2n706
2n706b
2n706ab
2N706B
10Vdc
J 2N706
2N706 JAN
2N2368
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2n706 transistor
Abstract: 2N706 transistor 2n706
Text: MIL-S-19500/120C amendment 3 10 M a y 1976 SUPERSEDING AMENDMENT 2 7 August 197*» MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, LOW-POWER TYPE 2N706 This amendment forms a part of Military Specification MIL-S-19500/12QC,
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L-S-19500/120C
2N706
MlL-S-19500/120C,
MiL-S-13ience
2n706 transistor
2N706
transistor 2n706
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mwab
Abstract: 2N706 transistor 2n706 2n706 transistor mwab 3.3
Text: MIL-S-19500/120C 15 April iyTO SUPERSEDING MIL-S-19500/120B 26 June 1063 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, LCW-PCWER TYPE 2N706 This specification Is mandatory fo r use by all De^ partm ents and Agencies of the Department of Defense.
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MIL-S-19500/120C
MIL-S-19500/120B
2N706
MJL-S-19900;
MIL-S-19500
mwab
2N706
transistor 2n706
2n706 transistor
mwab 3.3
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2n706 transistor
Abstract: 2N706 transistor 2n706 transistor #2N706
Text: 4 ^ Nicht für Neuentwicklungen Not for new developments 2N706 'W Silizium-NPN-Epitaxial-Planar-Schalttransistor Silicon NPN Epitaxial Planar Switching Transistor Anwendungen: Schnelle Schalter Applications: Fast switches Abmessungen in mm Dimensions in mm
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2N706
2n706 transistor
2N706
transistor 2n706
transistor #2N706
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2N706A
Abstract: npn transistor wc 2N706 2n706a transistor J 2N706A
Text: 0 /V E F ^ IP 2N706A NEW ENGLAND SEMICONDUCTOR SILICON SWITCHING NPN TRANSISTORS • • • FAST SWITCHING LOW SATURATION VOLTAGE HIGH FREQUENCY M A X IM U M R A T IN G S R A T IN G S Collector-Em itter Voltage Collector-Base Voltage Emitter-Base Voltage
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2N706A
2N706A
32ESTING
npn transistor wc
2N706
2n706a transistor
J 2N706A
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2n3052
Abstract: 2n706 transistor 2N744 2n708 Transistor 2N708
Text: TYPE 2N3052 DUAL N-P-N SILICON TRANSISTOR B U L L E T I N N O . D L -S 6 7 4 2 3 6 , A U G U S T 1 9 6 3 - R E V I S E D A P R IL Î 9 6 7 DESIGNED FOR MINIATURIZED APPLICATIONS REQUIRING DEVICES SIMILAR TO 2N706, 2N708, 2N744, 2N753, 2N834, 2N914, ETC. •
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2N3052
2N706,
2N708,
2N744,
2N753,
2N834,
2N914,
2n706 transistor
2N744
2n708
Transistor 2N708
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N2369
Abstract: 2N4260 2N2368 2N3546 2N2369A 2N3227 2N4261 2N706 2N708 2N869A
Text: TO-18 T R A N S IS T O R S F A S T S P E E D SW IT C H NPN Device Type 2N706 2N708 2N914 2N2368 2N 2369 2 N 2369A 2N3227 BSX90 2N4260 2N4261 lc max. mA Polarity v C EO , VcER<+> (Volts) NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 20 (+ ) 15 15 15 15 15 20 12
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2N706
2N708
2N914
N2368
N2369
2N2369A
2N3227
BSX90
2N4260
2N4261
2N2368
2N3546
2N869A
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