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    J 2N706 Search Results

    J 2N706 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    J 2N706 Thomson-CSF Condensed Data Book 1977 Scan PDF
    J2N706 Thomson-CSF Condensed Data Book 1977 Scan PDF
    J.2N706 Thomson-CSF Condensed Data Book 1977 Scan PDF
    J 2N706A Thomson-CSF Condensed Data Book 1977 Scan PDF
    J2N706A Thomson-CSF Condensed Data Book 1977 Scan PDF
    J-2N706A Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    J.2N706A Thomson-CSF Condensed Data Book 1977 Scan PDF

    J 2N706 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BF456

    Abstract: 2sc1941k 2SC34230 2SC2682P 2SC3271 to92 nec RF package SOT89 BF254 BF179A 2SC225 2SC2682E
    Text: RF POWER SILICON NPN Item Number Part Number I C S 10 Manufacturer 20 25 30 35 40 45 50 BF179A BF179A BF179A BF179B BF179B BF179B BF179C BF179C BF179C -zsDT463 MM3002 ST3002 MM3003 2SC2632 2SC2633 2N706 2N706A 2N706B 2N706C 2SC34230 2SC3423Y 2SC1012 2SC1012A


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    PDF 2SC3424 TBF869 TBF871 2SC1940K 2SC1940L 2SC1940M 2SC2780 2SC1941K 2SC1941L BF456 2SC34230 2SC2682P 2SC3271 to92 nec RF package SOT89 BF254 BF179A 2SC225 2SC2682E

    2N65s

    Abstract: 2n907 2N936 2N797 2N706 2N906 2N777 2N945 2N964 2N555
    Text: DIGITRÔN ELECTRONIC CORP 3bE D • 2ñ4St.D7 OOGOOGS 7 ■ • qj DGE'-p Page t,6Î - DIQITRON ELECTRONIC« #2 CORE 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax J O H N J. S C H W A R T Z


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    PDF 204EbD7 2N497AI 2N539 2N696A 2N728 2N871 2N922 2N498 2N539A 2N697 2N65s 2n907 2N936 2N797 2N706 2N906 2N777 2N945 2N964 2N555

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: RAY THE ON/ SEM IC O N D U C T OR 7597360 "TM RAYTHEON. D Ë J 75=1731.0 0005551 b SE M IC O N D U C T O R 94D Product Specifications Small Signal Transistors 0555 1 D 712S~-/3~ C J N PN Raytheon Ultra High Speed Switches CJ NPN Description High speed gold doped silicon epitaxial tran­


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    PDF 100mA. 2N2369A/JAN 2N4137 2N706A 2N2368 27BSC -050BSC 54BSC

    1N5411

    Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
    Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal


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    PDF CON-46 O-104 14-Lead 16-Lead 12-Lead 16-Lead O-220AB 1N5411 npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756

    BCY591

    Abstract: BC109C pin configuration 2N718 pin configuration 2N706 BC107C bcy59-7 BC107c pin 2n815 2N25 BC107 pin configuration
    Text: PIN CONFIGURATION 1. Emitter 2. B ase 3. Collector DIM MIN MAX A 5,24 5,84 B 4,52 4,97 C 4,31 5,33 D 0,40 0,53 E - F - 1,27 G - 2,97 0,76 H 0,91 1,17 J K 0,71 1,21 L 45D EG 12,7 - ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN Maximum Ratings


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    PDF BCY59-10 BFY76 BSX21 BSX48 BSY79 CIL351 CIL352 BCY591 BC109C pin configuration 2N718 pin configuration 2N706 BC107C bcy59-7 BC107c pin 2n815 2N25 BC107 pin configuration

    bcy5b

    Abstract: BCY591 BC179C BSX21 BC177C BCY581 2N708 2N718 2N718A 2N720
    Text: I— B PIN C O N FIG UR ATIO N 1. Emitter 2. Base 3. C ollector DIM MIN M AX A 5,24 5,84 B 4,52 4,97 C 4,31 5,33 D 0 ,40 0,53 E - 0,76 F - 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45D E G ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN


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    PDF 45DEG Tas25Â 2N706A BCY79-9 BCY79-10 BFX37 CF103 bcy5b BCY591 BC179C BSX21 BC177C BCY581 2N708 2N718 2N718A 2N720

    2N2368

    Abstract: 2N2475 2n2369 2N2476 2N2220 N2904 2N2218 2N2219 2N2221 2N2222
    Text: NPN SW ITCHING - continued Type Max VcEO lc V mA Max VcE sat at V hFE >C mA >B mA Min at Max 'c mA Switching Times (Max) at f j Min at lc MHz mA toff ns ton ns lc Package Comple­ ment mA 30 1000 0 -35 150 15 40 150 50 50 55* 360* 150 TO-39 2N2218 30 800 0 -4


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    PDF BFY51 2N2218 N2904 2N2219 2N2905 2N2220 2N2221 N2906 2N2222 2N2907 2N2368 2N2475 2n2369 2N2476 N2904

    Untitled

    Abstract: No abstract text available
    Text: 5LE J> m m057& 000btitiS 332 • ZETB^'2 '*7' 0 { NPN LOW LEVEL ZETEX SEMICONDUCTORS Type V CB V ceo V M ax lc V mA M a x V CE sat at V k mA Min f-jat hFE at !b Min M ax 'c m A MHz mA mA Continued P.ot at =ta Package Comple­ ment mW 2N3053 60 40 700 1.4


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    PDF 000bt 2N3053 2N696 2N697 BFY51 BSY51 BSY52 BC107 BCY59 BCY56

    2n2301

    Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
    Text: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74


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    PDF 2N727 2N869A 2N929A 2N930' 2N930A 2N1572 2N1S73 2N1574 2N24S3 2N2484 2n2301 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815

    Untitled

    Abstract: No abstract text available
    Text: CRIMSON S E M I C O ND UC TO R INC TT •.~>=. •^^ - 2514096 CRIMSON SEMICONDUCTOR 99 D 0 0 2 9 2 D DfViCE TYPl PACKAGE BVCEO BVCBO BVEBO ICBO @ VCB V i M IN IVI M IN (VI M IN («IAI M A X |V| De ( E s m o ^ b INC ' J ~ — 3 & - c>'i COB fT Nf tp tl U A f t


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    PDF 2N656 2N697 2N699 2N703 2N706 2N708 2N709 2N720 2N722 2N930

    2N702

    Abstract: 2N834 MPS3564 MPS914 2N744 2N3011 2N5224 2N835 2N743 2N914
    Text: MOTOROLA I SC -CDIODES/OPTOJ- 6367255 MOTOROLA SC 34 D Ü j|fc .3 h 7 E 5 S D IO D E S /O P TO 34C □ U ^ Ï T r '5 37975 "I D T'35-J5 SILICO N SM A LL-SIG N A L TR A N SISTO R DICE (continued) 2C2369A DIE NO. — NPN LINE SOURCE — DMB103 This die provides performance similar to that of the following device types:


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    PDF 35-J5 DMB103 2N702 2N703 2N706 2N708 2N743 2N744* 2N753* 2N834 MPS3564 MPS914 2N744 2N3011 2N5224 2N835 2N914

    BSX21

    Abstract: BC107C BC10B 2N718 pin configuration 2N915 BC109C pin configuration bfy76 BSY79 BC-108 2N2221A
    Text: TO-18 P IN C O N F I G U R A T I O N 1. E m itte r 2. B a s e 3. C o lle c to r DIM MIN A 5,24 MAX 5,84 B 4,52 4,97 C 4,31 5,33 D 0,40 0,53 E - F - 0,76 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45 DEG ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN


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    PDF BCY59-9 BFY76 BSX21 BSX48 BSY79 CIL351 CIL352 BSX21 BC107C BC10B 2N718 pin configuration 2N915 BC109C pin configuration BC-108 2N2221A

    Untitled

    Abstract: No abstract text available
    Text: SbE m T> ^7057fl NPN SWITCHING Type BFY51 Max V CEO 'c 0 0 0 b ^ 6 ZETEX S E M I C O N D U C T O R S Continued M ax V CE sat at hFE 'b Min M ax 40 V •c V mA mA mA 30 1000 0.35 150 15 041 « Z E T B " F i b S ~ C > j fT Min at at - Switching times (Max.) at


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    PDF 7057fl BFY51 2N2218 2N2904 2N2219 2N2905 2N2221 2N2369A 2N2368 2N2369

    BCY79-9

    Abstract: bcy791 BcY591 BSX21 2N706 BC107C BC109C pin configuration 2N706A 2N718A 2N720
    Text: TO-18 h - B -h ! o PIN C O N F IG U R A T IO N 1. Em itter 2. B a s e 3. Co llector DIM MIN A 5 ,2 4 M AX 5 ,8 4 B 4 ,5 2 4 ,9 7 C 4,31 5 ,3 3 D 0 ,4 0 0 ,5 3 0 ,7 6 E - F - 1,27 G - 2 ,9 7 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45 D E G ALL DIMENSIONS ARE IN M.M.


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    PDF 2N706 2N706A BCY79-9 BCY79-10 BFX37 CF103 23fl33cm 000135T BCY79-9 bcy791 BcY591 BSX21 BC107C BC109C pin configuration 2N718A 2N720

    2N8772

    Abstract: 2N877-81 2N706 2N877 2N878 2N885 2N886 GES706 2N885-889 12 volts 6 Ampere power supply
    Text: 2N706 S E E GES706 SCR 2N877-81 2N885-89 F E A T U R E S: • A ll-d iffu se d for P ro v e d R e liab ility • M in ia tu re P a c ka ge T O -1 8 • Tw o R a n g e s o f G a te Se n sitivity: 2 N 8 7 7 -8 8 1 - 2 0 0 u a max. 2 N 8 8 5 -8 8 9 — 2 0 u a max.


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    PDF 2N877-881 2N885-889 2N877-881 2N706 GES706 2N877-81 2N885-89 2N877, 2N885 2N8772 2N877-81 2N877 2N878 2N886 GES706 2N885-889 12 volts 6 Ampere power supply

    ILS 404 CB

    Abstract: 2n706 transistor transistor array K1 marking 3001 8AT transistor 2n706
    Text: MIL-S-19500/120C 15 April iyTO SUPERSEDING MIL-S-19500/120B 26 June 1063 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, LCW-PCWER TYPE 2N706 This specification Is mandatory fo r use by all De^ partm ents and Agencies of the Department of Defense.


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    PDF MIL-S-19500/120C MIL-S-19500/120B 2N706 MIL-S-19500 ILS 404 CB 2n706 transistor transistor array K1 marking 3001 8AT transistor 2n706

    2N706

    Abstract: 2N706A J 2N706 2N706AB 2N706B 2N706 JAN 2N2368
    Text: MOTOROLA SC XSTRS/R F D | b3b72SM OOflbait. 1 | M A X IM U M R A T IN G S R ating Collector-Em itter V olta g e 2N 706A,B C ollector-E m itter Voltag eO C o llector-Base V olta g e Em itter-Base V olta g e 2N706 2N 706A 2N706B C o llector Current 2N706AB


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    PDF 2n706a 2n706 2n706b 2n706ab 2N706B 10Vdc J 2N706 2N706 JAN 2N2368

    2n706 transistor

    Abstract: 2N706 transistor 2n706
    Text: MIL-S-19500/120C amendment 3 10 M a y 1976 SUPERSEDING AMENDMENT 2 7 August 197*» MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, LOW-POWER TYPE 2N706 This amendment forms a part of Military Specification MIL-S-19500/12QC,


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    PDF L-S-19500/120C 2N706 MlL-S-19500/120C, MiL-S-13ience 2n706 transistor 2N706 transistor 2n706

    mwab

    Abstract: 2N706 transistor 2n706 2n706 transistor mwab 3.3
    Text: MIL-S-19500/120C 15 April iyTO SUPERSEDING MIL-S-19500/120B 26 June 1063 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, LCW-PCWER TYPE 2N706 This specification Is mandatory fo r use by all De^ partm ents and Agencies of the Department of Defense.


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    PDF MIL-S-19500/120C MIL-S-19500/120B 2N706 MJL-S-19900; MIL-S-19500 mwab 2N706 transistor 2n706 2n706 transistor mwab 3.3

    2n706 transistor

    Abstract: 2N706 transistor 2n706 transistor #2N706
    Text: 4 ^ Nicht für Neuentwicklungen Not for new developments 2N706 'W Silizium-NPN-Epitaxial-Planar-Schalttransistor Silicon NPN Epitaxial Planar Switching Transistor Anwendungen: Schnelle Schalter Applications: Fast switches Abmessungen in mm Dimensions in mm


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    PDF 2N706 2n706 transistor 2N706 transistor 2n706 transistor #2N706

    2N706A

    Abstract: npn transistor wc 2N706 2n706a transistor J 2N706A
    Text: 0 /V E F ^ IP 2N706A NEW ENGLAND SEMICONDUCTOR SILICON SWITCHING NPN TRANSISTORS • • • FAST SWITCHING LOW SATURATION VOLTAGE HIGH FREQUENCY M A X IM U M R A T IN G S R A T IN G S Collector-Em itter Voltage Collector-Base Voltage Emitter-Base Voltage


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    PDF 2N706A 2N706A 32ESTING npn transistor wc 2N706 2n706a transistor J 2N706A

    2n3052

    Abstract: 2n706 transistor 2N744 2n708 Transistor 2N708
    Text: TYPE 2N3052 DUAL N-P-N SILICON TRANSISTOR B U L L E T I N N O . D L -S 6 7 4 2 3 6 , A U G U S T 1 9 6 3 - R E V I S E D A P R IL Î 9 6 7 DESIGNED FOR MINIATURIZED APPLICATIONS REQUIRING DEVICES SIMILAR TO 2N706, 2N708, 2N744, 2N753, 2N834, 2N914, ETC. •


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    PDF 2N3052 2N706, 2N708, 2N744, 2N753, 2N834, 2N914, 2n706 transistor 2N744 2n708 Transistor 2N708

    N2369

    Abstract: 2N4260 2N2368 2N3546 2N2369A 2N3227 2N4261 2N706 2N708 2N869A
    Text: TO-18 T R A N S IS T O R S F A S T S P E E D SW IT C H NPN Device Type 2N706 2N708 2N914 2N2368 2N 2369 2 N 2369A 2N3227 BSX90 2N4260 2N4261 lc max. mA Polarity v C EO , VcER<+> (Volts) NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 20 (+ ) 15 15 15 15 15 20 12


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    PDF 2N706 2N708 2N914 N2368 N2369 2N2369A 2N3227 BSX90 2N4260 2N4261 2N2368 2N3546 2N869A