VMO 440
Abstract: 650-01F 1200NC VMO 550-01F ixys VMO 440 motor IG 2200 19 x 000 15 r
Text: MOSFET Modules Contents VDSS ID cont RDS(on)max max. TC = 25°C TC = 25°C V A mΩ Ω 100 590 2.1 VMO 550-01F C3-2 690 1.8 VMO 650-01F C3-4 85 25 85 25 200 TO 240 Page VMK 90-02 T2 C3-6 VMM 85-02F C3-10 1) C3-14 C3-18 450 4.6 VMO 450-02F 500 4.2 VMO 500-02F 2)
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550-01F
650-01F
85-02F
C3-10
C3-14
C3-18
450-02F
500-02F
380-02F
400-02F
VMO 440
650-01F
1200NC
VMO 550-01F
ixys VMO 440
motor IG 2200 19 x 000 15 r
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VMO 440
Abstract: ixys VMO 440 VMO 550-01F lb 1470 2360A
Text: HiPerFETTM MOSFET Module VMO 550-01F VDSS = 100 V = 590 A ID25 RDS on = 2.1 mW D N-Channel Enhancement Mode G E 72873 G Preliminary Data S KS S Symbol Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 10 kW 100 V VGS Continuous
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550-01F
VMO 440
ixys VMO 440
VMO 550-01F
lb 1470
2360A
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VMO 440
Abstract: No abstract text available
Text: HiPerFETTM MOSFET Module VMO 550-01F VDSS = 100 V = 590 A ID25 RDS on = 2.1 mW D N-Channel Enhancement Mode G Preliminary Data E 72873 KS S S Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 10 kΩ 100 V VGS Continuous ±20
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550-01F
VMO 440
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VMO 440
Abstract: No abstract text available
Text: HiPerFETTM MOSFET Module VMO 550-01F VDSS = 100 V ID25 = 590 A RDS on = 2.1 mW D N-Channel Enhancement Mode G E 72873 G Preliminary Data S KS S Symbol Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 10 kW 100 V VGS Continuous
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550-01F
VMO 440
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7n60b
Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3
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AXC-051
AXC-053
AXC-101
AXC-102
AXL-001
AXL-051
AXV-102
142-12io8
142-16io8
19-08ho1
7n60b
35N120u1
ixys dsei 45-12a
DSDI 35-12A
20N80
80n06
80n60
VVY 40-16IO1
IXYS CS 2-12
IXFX 44N80
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full bridge igbt induction heating generator
Abstract: transistor x112 WESTCODE catalog 100-12E8 2-IAO-QMC-01001 IGBT ac switch in SSR IGBT D-Series IGCT 4.5kv ixys vuo 52 input id MITA15WB1200TMH
Text: P R O D U C T S E L E C T O R G U I D E IGBT & Rectifier Modules M A Y 2 0 0 7 Selector Guide incl.: Product Overview Tables Application Overview Technology Overview MiniPack 2 NEW Press-Pack IGBTs POWER DEVICES Power MOSFET Discreets RF Power MOSFETs IGBT Discreets
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
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MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
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Untitled
Abstract: No abstract text available
Text: VMO 550-01F VDSS Id25 HiPerFET MOSFET Module ^ D S o n = 100V “ 590 A “ 2 .1 m O N-Channel Enhancement Mode Preliminary Data (pS Maximum Ratings Symbol Test Conditions vv DSS Td = 25°C to 150°C 100 V v DGR Td = 25°C to 150°C; RGS = 10 kß 100
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550-01F
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VMO 440
Abstract: ixys VMO 440
Text: HiPerFET MOSFET Module VMO 550-01 F VD S S D25 R DS on N-Channel Enhancement Mode ? G = 100 V = 590 A = 2.1 m ii D I Preliminary Data KS A s Symbol Test Conditions Voss Tj = 25°C to 150°C 100 V Tj = 25°C to 150°C; R as = 10 kil 100 V VGs vG SM 'dbo
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VMO 440
Abstract: ixys VMO 440
Text: DIXYS HiPerFET MOSFET Module VMO 550-01F VDSS = 100V I D25 = 590 A RDS on = 2 .1 m Q N-Channel Enhancement Mode Preliminary Data Symbol Test Conditions Maximum Ratings VDSS Tj = 25°C to 150°C 100 V v MR Tj = 25°C to 150°C; RGS = 10 k£2 100 V Vos Continuous
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550-01F
VMO 440
ixys VMO 440
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