diode b3
Abstract: MII 75-12 A3 resistor catalog 30-12A6 grease diode 12A3 B3-12 75-12A3 200-12A4 10-06A6
Text: IGBT Modules B3 1999 IXYS All rights reserved B3 - 1 IGBT Modules Contents Package style VCES IC VCE sat Type Page TC = 25° C TC = 25° C max. V A V 1200 35 3.0 MWI 35-12A5 B3- 4 50 3.0 MWI 50-12A5 B3- 8 75 3.0 MWI 75-12A5 B3-12 75 3.0 MII 75-12A3 MID 75-12A3
|
Original
|
PDF
|
35-12A5
50-12A5
75-12A5
B3-12
75-12A3
75-12A3
B3-16
100-12A3
diode b3
MII 75-12 A3
resistor catalog
30-12A6
grease
diode 12A3
B3-12
200-12A4
10-06A6
|
Untitled
Abstract: No abstract text available
Text: DSSK 60-013A DSSK 60-015A IFAV = 2x30 A VRRM = 130/150 V VF = 0.69 V Power Schottky Rectifier with common cathode Preliminary Data VRSM VRRM V V 130 150 130 150 TO-247 AD Type A DSSK 60-013A DSSK 60-015A C A A C A C TAB A = Anode, C = Cathode , TAB = Cathode
|
Original
|
PDF
|
0-013A
0-015A
O-247
D98004E
D-68623
|
Untitled
Abstract: No abstract text available
Text: Advanced Technical Data DSSK 40-006B IFAV = 2x20 A VRRM = 60 V VF = 0.50 V Power Schottky Rectifier with common cathode VRSM VRRM V V 60 60 TO-247 AD Type A DSSK 40-006B C A A C A Symbol Test Conditions IFRMS IFAV IFAV TC = 130°C; rectangular, d = 0.5 TC = 130°C; rectangular, d = 0.5; per device
|
Original
|
PDF
|
40-006B
O-247
D98004E
D-68623
|
LBA716
Abstract: IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219
Text: Semiconductor Product Catalog IXYS Integrated Circuits Division In April, 2012, Clare, Inc., officially became IXYS Integrated Circuits Division. IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division
|
Original
|
PDF
|
N1016,
CH-2555
LBA716
IXDD630
DARLINGTON TRANSISTOR ARRAY
V/CPC3701
CPC1006N
CPC1014N
CPC1019N
CPC1219
|
Untitled
Abstract: No abstract text available
Text: Advanced Technical Data DSSK 70-008A IFAV = 2x35 A VRRM = 70 V VF = 0.66 V Power Schottky Rectifier with common cathode VRSM VRRM V V 70 70 TO-247 AD Type A DSSK 70-008A C A A C A Symbol Test Conditions IFRMS IFAV IFAV TC = 150°C; rectangular, d = 0.5 TC = 150°C; rectangular, d = 0.5; per device
|
Original
|
PDF
|
0-008A
O-247
D98004E
D-68623
|
Untitled
Abstract: No abstract text available
Text: DSSK 20-013A DSSK 20-015A IFAV = 2x10 A VRRM = 130/150 V VF = 0.65 V Power Schottky Rectifier with common cathode Preliminary Data VRSM VRRM V V TO-220 AB Type A 130 150 130 150 C DSSK 20-013A DSSK 20-015A Symbol Test Conditions IFRMS IFAV IFAV TC = 165°C; rectangular, d = 0.5
|
Original
|
PDF
|
0-013A
0-015A
O-220
D98004E
D-68623
|
IXEP1400
Abstract: CPC1706 CPC1020N
Text: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.
|
Original
|
PDF
|
CH-2555
N1016,
IXEP1400
CPC1706
CPC1020N
|
IXEP1400
Abstract: CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844
Text: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.
|
Original
|
PDF
|
CH-2555
N1016,
IXEP1400
CPC7601
CPC1907B
CPC1106N
CPC1004N
CPC1006N
CPC1009N
CPC1114N
CPC1333
IX21844
|
P65 switch
Abstract: No abstract text available
Text: Advanced Technical Data DSSK 40-008B IFAV = 2x20 A VRRM = 70 V VF = 0.57 V Power Schottky Rectifier with common cathode VRSM VRRM V V 70 70 TO-247 AD Type A DSSK 40-008B C A A C A Symbol Test Conditions IFRMS IFAV IFAV TC = 130°C; rectangular, d = 0.5 TC = 130°C; rectangular, d = 0.5; per device
|
Original
|
PDF
|
40-008B
O-247
IRM700,
28-0045B
28-0045B
P65 switch
|
Untitled
Abstract: No abstract text available
Text: □IXYS Advanced Technical Data DSSK 40-006B Power Schottky Rectifier Ifav with common cathode V rrm Vp v RSM ^ rrm V V 60 60 2x20 A = 60 V = 0.66 V = TO-247 AD Type L r*T ~ A DSSK 40-006B C A C TAB Symbol Test Conditions Maximum Ratings 70 20 70 A A A 350
|
OCR Scan
|
PDF
|
40-006B
O-247
D98004E
D-68623
|
Untitled
Abstract: No abstract text available
Text: □IXYS DSEC 60-04; HiPerFRED Epitaxial Diode with soft recovery v RSM Type V VRHM V 400 400 DSEC 60-04A I fav VRRM t,rr 30 A 400 V 30 ns TO-247 AD V C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Test Conditions Maximum Ratings 70 30 tbd A A A I fsm
|
OCR Scan
|
PDF
|
O-247
0-04A
D98004E
D-68623
|
Untitled
Abstract: No abstract text available
Text: □IXYS DSSK 20-013A DSSK 20-015A Power Schottky Rectifier lFAV = 2x10 A VRRM = 130/150 V VF = 0.65 V with common cathode Preliminary Data V RSM TyPe V rrm V ' V r T ~ ^ A 130 150 130 150 Symbol C A = Anode, C = Cathode , TAB = Cathode Test C onditions Maximum Ratings
|
OCR Scan
|
PDF
|
0-013A
0-015A
D-68623
|
Untitled
Abstract: No abstract text available
Text: □IXŸS DSSK 70-008A Power Schottky Rectifier •f a v with common cathode V rrm VF v RSM v rr« V V 70 70 i- j Typ e A DSSK 70-008A C 1 2x35 A 70 V 0.66 V TO-247 AD A C TAB Symbol Test Conditions Maximum Ratings 70 35 70 A A A 700 A lAS = tbd A; L = 180 pH; TVJ = 25°C; non repetitive
|
OCR Scan
|
PDF
|
0-008A
O-247
D98004E
D-68623
GGD473Ã
|
IXYS snubber DIODE
Abstract: No abstract text available
Text: □IXYS DSEP 2x31-04B HiPerFRED Epitaxial Diode •FAV with soft recovery V 2x30 A 400 V 30 ns rrm l rr Prelim inary Data V RSM V RRM V V 400 400 Type 1 fel b H 1 1 DSEP 2x31-04B Test Conditions Ifrms Ifavm Ifrm Tc = 100°C ; rectangular, d = 0.5 W 1 1
|
OCR Scan
|
PDF
|
2x31-04B
2x31-04B
OT-227
1500C
D-68623
IXYS snubber DIODE
|
|
ixys free catalog
Abstract: No abstract text available
Text: □ IXYS D S E C 16-12A JL JL. Jl. -JL. HiPerFRED Epitaxial Diode IFAV = 2x 10 A VRRM = 1200 V trr = 40 ns with common cathode and soft recovery V RSM 1200 V RRM TvDe ïr' 1200 DSEC 16-12A TO-220 AB A = Anode, C = Cathode, TA B = Cathode Symbol U rms U
|
OCR Scan
|
PDF
|
6-12A
25-VR
ixys free catalog
|
Untitled
Abstract: No abstract text available
Text: □IXYS MUBW 30-12 A6 Converter - Brake - Inverter Module CBI1 Rectifier Brake Inverter V RRM = 1600V *FAVM - 25 A U = 370 A VCES = 1200 V V CES = 1200 V 'C25 =18 A VCE(Sat,= 2.6 V 'C25 = 31 A V CE,Sat,= 2.2 V Features Input Rectifier Bridge D8 - D13 Symbol
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: □IXYS MUBW 20-06 A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 24 25 D 2Ï Preliminary data Ì VCES = 600 V 'C25 = 23 A Vnc, H= 2.1 V CE(sat) > VCES = 600 V 'C25 = 1 1 A II VRRM = 1200V L.,. = 11 A FAVM lC Q M = 250 A FSM u t(s a t)
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: □IXYS MUBW 10-12A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 24 25 D 2Ï Preliminary data Rectifier Brake Inverter V RRM = 1600V L.,. FAVM = 11 A U = 250 A VCES = 1200 V V CES = 1200 V 'C25 =3-6 A VCE(Sat,= 2 - 8 V 'C25 = 13 A
|
OCR Scan
|
PDF
|
10-12A6
|
Untitled
Abstract: No abstract text available
Text: □IXYS MUBW 35-06 A6 Converter - Brake - Inverter Module CBI1 Rectifier Brake Inverter VRRM = 1200V *FAVM - 25 A lC QM = 370 A FSM VCES = 600 V 'C25 = 23 A Vnc, H= 2.1 V CE(sat) VCES = 600 V 'C25 = 38 A Vnc, H= 2.1 V CE(sat) Features Input Rectifier Bridge D8 - D13
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: □IXYS MUBW 6-06 A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 24 25 D 2Ï Preliminary data Rectifier Brake Inverter V RRM = 1200V L.,. = 11 A FAVM U = 250 A VCES = 600 V VCES = 600 V 'C25 =7A VCE(Sat,= 2.0 V 'C25 =7A VCE,Sat,= 2.0 V
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: □IXYS DSS 60-0045B Power Schottky Rectifier 60 A 45 V 0.57 V •FAV V rrm VF Prelim inary Data TO-247 AD V RSM TyP e V rrm V V 45 45 o k M A DSS 60-0045B C TAB Symbol Test Conditions Maximum Ratings ^FRMS Tc = 100°C; rectangular, d = 0.5 ^FAV TVJ = 4 5 °C ; £ = 10 ms (50 Hz), sine
|
OCR Scan
|
PDF
|
60-0045B
O-247
1000C
|
Untitled
Abstract: No abstract text available
Text: niXYS DSEP 30-04 HiPerFRED Epitaxial Diode Ì fav with soft recovery V rrM trr v” r s m V RR« V V 400 400 30 A 400 V 30 ns TO-247AD Type DSEP 3 0 - 0 4 A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Test Conditions Maximum Ratings 70 30 tbd A
|
OCR Scan
|
PDF
|
O-247AD
D98004E
D-68623
0DD4733
|
Untitled
Abstract: No abstract text available
Text: □IXYS MUBW 15-06 A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 24 25 D 2Ï Preliminary data VCES = 600 V Ì 'C25 = 18 A Vnc, H= 2.1 V CE(sat) > VCES = 600 V 'C25 = 1 1 A II VRRM = 1200V L.,. = 11 A FAVM lC Q M = 250 A FSM u t(s a t)
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: □IXYS MUBW 25-06 A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 0 D 23 8 25 24 D 2Ï Preliminary data Rectifier Brake Inverter VRRM = 1200V L.,. = 11 A FAVM lC Q M = 250 A FSM VCES = 600 V 'C25 = 1 8 A Vnc, H= 2.1 V C E (sat) VCES = 600 V
|
OCR Scan
|
PDF
|
|