2n60p
Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond
|
Original
|
PDF
|
IXFR48N60P
18N60P
30N60P
22N60P
36N60P
26N60P
48N60P
PLUS220
IXTV22N50PS.
2n60p
gsm based speed control of single phase induction motor
thyristor family
48N60
600v 20 amp mosfet
14n60
300V HiPerFET power MOSFET single die MOSFET
Wireless A.C motor speed controlling system
IXYS SCR MODULE Gate Drive
15N60P
|
16N50P
Abstract: f16n50p
Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM IXFC 16N50P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 500 V = 10 A ≤ 450 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS VDGR
|
Original
|
PDF
|
ISOPLUS220TM
16N50P
1-30-05-A
16N50P
f16n50p
|
Untitled
Abstract: No abstract text available
Text: Advanced Technical Information PolarHVTM Power MOSFET IXTA 16N50P IXTP 16N50P IXTQ 16N50P VDSS ID25 = 500 V = 16 A Ω = 400 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
|
Original
|
PDF
|
16N50P
16N50P
O-220
O-263
405B2
|
16N50P
Abstract: IXYS 16N50P f16n50
Text: PolarHVTM HiPerFET Power MOSFET IXFA 16N50P IXFH 16N50P IXFP 16N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ VGS VGSM
|
Original
|
PDF
|
16N50P
O-220
O-263
O-247
O-220)
5J-745)
16N50P
IXYS 16N50P
f16n50
|
16N50P
Abstract: IXYS 16N50P IXTP IXTP IXTP IXTP IXYS DIODE
Text: PolarHVTM Power MOSFET IXTA 16N50P IXTP 16N50P IXTQ 16N50P = 500 V = 16 A ≤ 400 mΩ Ω VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500
|
Original
|
PDF
|
16N50P
16N50P
IXYS 16N50P
IXTP IXTP IXTP IXTP
IXYS DIODE
|
16N50P
Abstract: No abstract text available
Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFC 16N50P VDSS ID25 RDS on trr = 500 V = 10 A Ω = 450 mΩ = 200 ns Electrically Isolated Tab, N-Channel Enhancement Mode, Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings
|
Original
|
PDF
|
16N50P
16N50P
|
16N50p
Abstract: IXYS 16N50P
Text: Advanced Technical Information PolarHVTM Power MOSFET IXTA 16N50P IXTP 16N50P IXTQ 16N50P VDSS ID25 = 500 V = 16 A Ω = 400 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
|
Original
|
PDF
|
16N50P
O-220
O-263
16N50p
IXYS 16N50P
|
16N50P
Abstract: No abstract text available
Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFA 16N50P IXFP 16N50P IXFH 16N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500
|
Original
|
PDF
|
16N50P
O-220
O-263
O-247
16N50P
|
16n50
Abstract: 646V
Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFA 16N50P IXFP 16N50P IXFH 16N50P VDSS ID25 = 500 V = 16 A Ω = 400 mΩ = 200 ns RDS on trr N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C
|
Original
|
PDF
|
16N50P
16N50P
O-220
O-263
O-247
16n50
646V
|
STW20N60
Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal
|
Original
|
PDF
|
O-220,
ISOPLUS220TM,
O-247,
ISOPLUS247TM,
O-264,
ISOPLUS264TM.
PLUS220
ISOPLUS220TM
PLUS220SMD
O-252
STW20N60
2n60p
IXFB100N50
IXFB100N50P
STW20N60FD
IXFB100N50P TO-264
ixys ixfn100n50p
IXFN48n60p
IXFH30N60P
ixfn100n50p
|
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
|
Original
|
PDF
|
MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
|