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    IXYS Corporation IXTY05N100

    MOSFET N-CH TO252AA
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    IXTY05N100 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: VDSS ID25 IXTU05N100 IXTY05N100 High Voltage Power MOSFET = = ≤ RDS on 1000V 750mA Ω 17Ω N-Channel Enhancement Mode Avalanche Rated TO-251 G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTU05N100 IXTY05N100 750mA O-251 05N100M PDF

    Untitled

    Abstract: No abstract text available
    Text: High Voltage Power MOSFET IXTU05N100 IXTY05N100 VDSS ID25 = =  RDS on 1000V 750mA  17 N-Channel Enhancement Mode Avalanche Rated TO-251 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M


    Original     		IXTU05N100 IXTY05N100 750mA O-251 100ms 05N100 3-14-A PDF

    IXTY05N100

    Abstract: IXTU05N10 IXTU 1000V IXTU05N
    Text: High Voltage Power MOSFET IXTU05N100 IXTY05N100 VDSS ID25 = = ≤ RDS on 1000V 750mA Ω 17Ω N-Channel Enhancement Mode Avalanche Rated TO-251 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000


    Original     		IXTU05N100 IXTY05N100 750mA O-251 05N100M IXTY05N100 IXTU05N10 IXTU 1000V IXTU05N PDF