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    IXYS Corporation IXTQ240N055T

    MOSFET N-CH 55V 240A TO3P
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    IXTQ240N055T Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTQ240N055T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 55V 240A TO-3P Original PDF

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    IXTH240N055T

    Abstract: IXTQ240N055T 240N055T
    Text: Preliminary Technical Information IXTH240N055T IXTQ240N055T TrenchMVTM Power MOSFET VDSS ID25 RDS on = 55 V = 240 A Ω ≤ 3.6 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF IXTH240N055T IXTQ240N055T O-247 240N055T 11-16-06-B IXTH240N055T IXTQ240N055T 240N055T

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    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTH240N055T IXTQ240N055T VDSS ID25 RDS on = 55 V = 240 A Ω ≤ 3.6 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF IXTH240N055T IXTQ240N055T O-247 240N055T 11-16-06-B

    1262-33

    Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
    Text: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.


    Original     		PDF 5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T