IXTP3N100P Search Results

IXTP3N100P Price and Stock

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Littelfuse Inc IXTP3N100P MOSFET N-CH 1000V 3A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTP3N100P	Tube	263		1	1 $4.69 10 $4.69 100 $4.69 1000 $2.10324 10000 $2.10324	Buy Now
Newark	IXTP3N100P	Bulk			300	1 - 10 - 100 $3 1000 $2.41 10000 $2.24	Buy Now
IXYS Corporation IXTP3N100P MOSFETs 3 Amps 1000V 4.8 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTP3N100P		292			1 $4.69 10 $4.62 100 $2.42 1000 $2.1 10000 $2.1	Buy Now
Future Electronics	IXTP3N100P	Tube		24 Weeks	300	1 - 10 - 100 $2.46 1000 $2.46 10000 $2.46	Buy Now
TTI	IXTP3N100P	Tube			300	1 - 10 - 100 - 1000 $2.1 10000 $2.1	Buy Now
TME	IXTP3N100P				1	1 $3.59 10 $2.86 100 $2.57 1000 $2.57 10000 $2.57	Get Quote
Chip 1 Exchange	IXTP3N100P		3,643			1 - 10 - 100 - 1000 - 10000 -	Get Quote

New Advantage Corporation	IXTP3N100P		2,203		1	1 - 10 - 100 $5.22 1000 $5.22 10000 $4.87	Buy Now

IXTP3N100P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTP3N100P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 3A TO-220		Original	PDF

IXTP3N100P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXTP3N100P Abstract: IXTA3N100P 3n100p T3N100 IXTH3N100P 3n100 Text: PolarTM Power MOSFET IXTA3N100P IXTH3N100P IXTP3N100P VDSS ID25 = 1000V = 3.0A ≤ 4.8Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXTA3N100P IXTH3N100P IXTP3N100P O-263 3N100P 3-08-A IXTP3N100P IXTA3N100P T3N100 IXTH3N100P 3n100
IXTH3N100P Abstract: IXTA3N100P Text: PolarTM Power MOSFET VDSS ID25 IXTA3N100P IXTH3N100P IXTP3N100P = 1000V = 3.0A ≤ 4.8Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25°C to 150°C 1000 V VDGR	Original	PDF	IXTA3N100P IXTH3N100P IXTP3N100P O-263 O-220 3N100P 3-08-A IXTH3N100P IXTA3N100P
T3N100 Abstract: IXTH3N100P IXTP3N100P IXTA3N100P Siemens DIODE E 1220 Text: Polar VHVTM Power MOSFET IXTA3N100P IXTH3N100P IXTP3N100P VDSS ID25 = 1000V = 3A ≤ Ω 4.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXTA3N100P IXTH3N100P IXTP3N100P O-263 3N100P T3N100 IXTH3N100P IXTP3N100P IXTA3N100P Siemens DIODE E 1220
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original	PDF
MJ1005 Abstract: MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007 Text: STI Type: IXTM3N100A Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 7.0 Trans Conductance Mhos: 1.5 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:	Original	PDF	IXTM3N100A O-204AA/TO-3 IXTM3N70A IXTM3N70 O-204AA/TO-3: MJ13081 MJ13091 MJ1005 MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007