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    IXYS Corporation IXTP16N50PM

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    IXTP16N50PM

    Abstract: 16N50 16N50P
    Text: Advance Technical Information IXTP16N50PM PolarHVTM Power MOSFET VDSS ID25 RDS on = 500V = 7.5A Ω ≤ 420mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED (IXTP.M) OUTLINE Symbol Test Conditions


    Original     		IXTP16N50PM 16N50P 4-30-09-C IXTP16N50PM 16N50 PDF