IXTP14N60PM Search Results

IXTP14N60PM Price and Stock

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Littelfuse Inc IXTP14N60PM MOSFET N-CH 600V 7A TO220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTP14N60PM	Tube			300	1 - 10 - 100 - 1000 $2.05807 10000 $2.05807	Buy Now
Newark	IXTP14N60PM	Bulk			300	1 - 10 - 100 $2.84 1000 $2.28 10000 $2.12	Buy Now
IXYS Corporation IXTP14N60PM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Future Electronics	IXTP14N60PM	Tube		24 Weeks	50	1 - 10 - 100 $2.33 1000 $2.33 10000 $2.33	Buy Now
TTI	IXTP14N60PM	Tube			300	1 - 10 - 100 - 1000 $2.14 10000 $2.1	Buy Now
TME	IXTP14N60PM				1	1 $3.43 10 $2.72 100 $2.46 1000 $2.46 10000 $2.46	Get Quote
New Advantage Corporation	IXTP14N60PM		67		1	1 - 10 - 100 $4.94 1000 $4.94 10000 $4.94	Buy Now

IXTP14N60PM Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTP14N60PM		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 7A TO-220		Original	PDF

IXTP14N60PM Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
14n60 Abstract: IXTP14N60PM Text: PolarHVTM Power MOSFET VDSS ID25 IXTP14N60PM RDS on = 600V = 7A Ω ≤ 550mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED (IXTP.M) OUTLINE Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	PDF	IXTP14N60PM 14N60P 12-22-08-G 14n60 IXTP14N60PM
IXTP14N60PM Abstract: 14n60 7A 27 Text: IXTP14N60PM PolarHVTM Power MOSFET VDSS ID25 RDS on = 600V = 7A Ω ≤ 550mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED (IXTP.M) OUTLINE Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	PDF	IXTP14N60PM 14N60P 12-22-08-G IXTP14N60PM 14n60 7A 27
IXTP14N60PM Abstract: No abstract text available Text: PolarHVTM Power MOSFET IXTP14N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600 V = 7 A Ω ≤ 550 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	PDF	IXTP14N60PM O-220 14N60P 8-21-06E IXTP14N60PM
IXGP70N33 Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim	Original	PDF	D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250