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    Abstract: No abstract text available
    Text: i X y s lflE D coRP 000Db32 □ IX Y S S 1-3^1-13 IXTE10N60X4 MAXIMUM RATINGS PER DEVICE Parameter Sym. IXTE10N60X4 Drain-Source Voltage (1) Voss 600 Vdc Drain-Gate Voltage (Rqs = 1.0MO) (1) Vdgr 600 Vdc Vqs ±20 Vgsm ±30 Vdc V Id 10 Ado Drain Current Pulsed (3)


    OCR Scan     		PDF 000Db32 IXTE10N60X4 IXTE10N60X4

    f g megamos

    Abstract: megamos megamos 48 TO220H ID 48 Megamos megamos 13 IXGE
    Text: I X Y S CORP 16E 5 IS 4b fit55t Q000563 H H§ I T t-m MODULESand PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech­ nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested


    OCR Scan     		PDF ofMIL-S-19500 MIL-M-38510. f g megamos megamos megamos 48 TO220H ID 48 Megamos megamos 13 IXGE

    f g megamos

    Abstract: megamos 13 megamos IXGE75N100Z ID 48 Megamos
    Text: I X Y S CORP 16E 5 IS 4 b fit55t Q000563 H H§ ITt-m MODULES and PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech­ nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested


    OCR Scan     		PDF fit55t Q000563 f g megamos megamos 13 megamos IXGE75N100Z ID 48 Megamos