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    IXTB62N50L Search Results

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    IXTB62N50L Price and Stock

    Littelfuse Inc IXTB62N50L

    MOSFET N-CH 500V 62A PLUS264
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    DigiKey IXTB62N50L Tube 200 1
    • 1 $57.97
    • 10 $57.97
    • 100 $42.7504
    • 1000 $42.7504
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    Newark IXTB62N50L Bulk 300
    • 1 -
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    • 100 $44.81
    • 1000 $44.81
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    IXYS Corporation IXTB62N50L

    MOSFETs 62 Amps 500V 0.1 Rds
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    Mouser Electronics IXTB62N50L
    • 1 $56.23
    • 10 $54.4
    • 100 $42.75
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    • 10000 $42.75
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    Future Electronics IXTB62N50L Tube 300
    • 1 $44.01
    • 10 $43.42
    • 100 $41.92
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    TTI IXTB62N50L Tube 25 25
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    • 100 $57
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    TME IXTB62N50L 11 1
    • 1 $65.88
    • 10 $52.37
    • 100 $48.78
    • 1000 $48.78
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    IXYS Integrated Circuits Division IXTB62N50L

    MOSFET DIS.62A 500V N-CH PLUS264-3 LINEAR THT
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    Ozdisan Elektronik IXTB62N50L
    • 1 $79.47072
    • 10 $79.47072
    • 100 $74.2717
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    IXTB62N50L Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTB62N50L IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 62A PLUS264 Original PDF

    IXTB62N50L Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: LinearTM Power MOSFET w/Extended FBSOA VDSS ID25 IXTB62N50L RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 62A ≤ 100mΩ Ω PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original
    PDF IXTB62N50L PLUS264TM 62N50L 11-04-11-B

    62N50L

    Abstract: IXTB62N50L
    Text: Preliminary Technical Information Linear Power MOSFET IXTB62N50L With Extended FBSOA VDSS ID25 N-Channel Enhancement Mode RDS on Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous


    Original
    PDF IXTB62N50L 264TM 62N50L 5-07-A 62N50L IXTB62N50L

    IXTB62N50L

    Abstract: No abstract text available
    Text: LinearTM Power MOSFET w/Extended FBSOA IXTB62N50L VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 62A ≤ 100mΩ Ω PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original
    PDF IXTB62N50L PLUS264TM 62N50L 11-04-11-B IXTB62N50L

    IXAN0068

    Abstract: IXTK46N50L Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs 1000V 2A BJT 1200W MOSFET power IXTH24n50l mosfet modern applications 400V linear regulator IXTN62N50L IXTH12N100L
    Text: Linear Power MOSFETS Basic and Applications Abdus Sattar, Vladimir Tsukanov, IXYS Corporation IXAN0068 Applications like electronic loads, linear regulators or Class A amplifiers operate in the linear region of the Power MOSFET, which requires high power dissipation capability


    Original
    PDF IXAN0068 6710405B2, IXAN0068 IXTK46N50L Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs 1000V 2A BJT 1200W MOSFET power IXTH24n50l mosfet modern applications 400V linear regulator IXTN62N50L IXTH12N100L