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    IXYS Corporation IXTA1N80P

    MOSFET N-CH TO263
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    IXTA1N80P Datasheets Context Search

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    1N80P

    Abstract: T1N80 IXTU1N80P IXTA1N80P IXTA1N80 IXTP1N80P
    Text: Preliminary Technical Information PolarTM Power MOSFET IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P N-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G S VDSS ID25 RDS(on) TO-251 (IXTU) TO-220 (IXTP) (TAB) G G (TAB) D S Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P O-263 O-251 O-220 1N80P T1N80 IXTU1N80P IXTA1N80P IXTA1N80 IXTP1N80P PDF

    IXTU1N80P

    Abstract: T1N80 1N80P
    Text: Preliminary Technical Information PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G S VDSS ID25 IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P RDS(on) TO-251 (IXTU) TO-220 (IXTP) (TAB) G G (TAB) S Test Conditions VDSS TJ = 25°C to 150°C


    Original     		O-263 IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P O-251 O-220 IXTU1N80P T1N80 1N80P PDF