IXGR72N60C3 Search Results

IXGR72N60C3 Price and Stock

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IXYS Corporation IXGR72N60C3 DISC IGBT PT-HIFREQUENCY ISOPLUS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGR72N60C3	Tube			30	1 - 10 - 100 $11.41167 1000 $11.41167 10000 $11.41167	Buy Now
IXYS Corporation IXGR72N60C3D1 IGBT 600V 75A 200W ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGR72N60C3D1	Tube			30	1 - 10 - 100 $7.92233 1000 $7.92233 10000 $7.92233	Buy Now
Bristol Electronics	IXGR72N60C3D1		30			1 - 10 - 100 - 1000 - 10000 -	Get Quote

IXGR72N60C3 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXGR72N60C3D1		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 75A 200W ISOPLUS247		Original	PDF

IXGR72N60C3 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
siemens igbt inverters Abstract: 8D-11 IF110 ISOPLUS247 ixgr72n60c3d1 2X61 Text: IXGR72N60C3D1 GenX3TM 600V IGBT with Diode VCES IC110 VCE sat tfi(typ) High-Speed Low-Vsat PT IGBT 40-100 kHz Switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20	Original	PDF	IXGR72N60C3D1 IC110 IF110 247TM 2x61-06A 72N60C3 11-25-09-C siemens igbt inverters 8D-11 IF110 ISOPLUS247 ixgr72n60c3d1 2X61
72N60C3 Abstract: ISOPLUS247 IXGR72N60C3D1 DS100010 Text: Preliminary Technical Information IXGR72N60C3D1 GenX3TM 600V IGBT High speed PT IGBTs for 40 - 100 kHz switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM	Original	PDF	IXGR72N60C3D1 IC110 2x61-06A 72N60C3 ISOPLUS247 IXGR72N60C3D1 DS100010
Untitled Abstract: No abstract text available Text: Preliminary Technical Information IXGR72N60C3 GenX3TM 600V IGBT VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = £ = 600V 35A 2.7V 55ns High-Speed Low-Vsat PT IGBT 40-100 kHz Switching ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES	Original	PDF	IXGR72N60C3 IC110 247TM 72N60C3 11-25-09-C
Untitled Abstract: No abstract text available Text: GenX3TM 600V IGBT with Diode IXGR72N60C3D1 VCES IC110 VCE sat tfi(typ) High-Speed Low-Vsat PT IGBT 40-100 kHz Switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20	Original	PDF	IXGR72N60C3D1 IC110 247TM IF110 2x61-06A 72N60C3 11-25-09-C
Inverter Welder Abstract: inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter Text: IXYS POWER Efficiency through Technology NEW 600V GenX3 IGBTs PRO D UC T next generation 600V IGBTs for power conversion applications january 2009 OVERVIEW IXYS extends its GenX3TM insulated gate bipolar transistor IGBT product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM	Original	PDF	PB60IGBTA3B3C3 Inverter Welder inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter