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    50n60

    Abstract: No abstract text available
    Text: High-Gain IGBTs IXGA50N60B4 IXGP50N60B4 IXGH50N60B4 VCES = 600V IC110 = 50A VCE sat ≤ 1.8V Low-Vsat PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXGA50N60B4 IXGP50N60B4 IXGH50N60B4 IC110 O-263 IC110 O-220AB O-247 50N60B4 50n60 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information High-Gain IGBTs IXGA50N60B4 IXGP50N60B4 IXGH50N60B4 VCES = 600V IC110 = 36A VCE sat ≤ 1.80V Low-Vsat PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C


    Original     		IXGA50N60B4 IXGP50N60B4 IXGH50N60B4 IC110 O-263 IC110 O-220AB O-247 50N60B4 PDF

    Untitled

    Abstract: No abstract text available
    Text: High-Gain IGBTs VCES = 600V IC110 = 50A VCE sat ≤ 1.8V IXGA50N60B4 IXGP50N60B4 IXGH50N60B4 Low-Vsat PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IC110 IXGA50N60B4 IXGP50N60B4 IXGH50N60B4 O-263 O-220AB 50N60B4 PDF