IXGN50N60 Search Results

IXGN50N60 Price and Stock

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IXYS Corporation IXGN50N60BD3 IGBT MOD 600V 75A 250W SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGN50N60BD3	Tube			10	1 - 10 $17.778 100 $17.778 1000 $17.778 10000 $17.778	Buy Now
IXYS Corporation IXGN50N60BD2 IGBT MOD 600V 75A 250W SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGN50N60BD2	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	IXGN50N60BD2		76		1	1 $36 10 $36 100 $30.4632 1000 $30.4632 10000 $30.4632	Buy Now
Quest Components	IXGN50N60BD2		60			1 $39 10 $39 100 $34.5 1000 $34.5 10000 $34.5	Buy Now

IXGN50N60 Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXGN50N60		IXYS	Power MOSIGBTs		Scan	PDF
IXGN50N60B		IXYS	600V HiPerFAST IGBT		Original	PDF
IXGN50N60B		IXYS	HiPerFAST IGBT		Original	PDF
IXGN50N60BD2		IXYS	IGBT Modules: Boost Configurated IGBT Modules		Original	PDF
IXGN50N60BD2.		IXYS	Power Factor Correction Modules		Original	PDF
IXGN50N60BD3		IXYS	Buck Configuration		Original	PDF

IXGN50N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BD3 diode Abstract: 50N60BD2 w a2a Text: HiPerFASTTM IGBT with HiPerFRED IXGN 50N60BD2 IXGN 50N60BD3 Buck & boost configurations IGBT .BD2 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75	Original	PDF	50N60BD2 50N60BD3 Applic100 BD3 diode w a2a
IGBT 60A Abstract: ixgn50N60 60-06A IXGN50N60BD2 IXGN50N60BD3 ixgn Text: HiPerFASTTM IGBT with HiPerFRED IXGN 50N60BD2 IXGN 50N60BD3 Buck & boost configurations IGBT .BD2 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C	Original	PDF	50N60BD2 50N60BD3 OT-227B, 0-06A IGBT 60A ixgn50N60 60-06A IXGN50N60BD2 IXGN50N60BD3 ixgn
50N60BD3 Abstract: No abstract text available Text: HiPerFASTTM IGBT with HiPerFRED IXGN 50N60BD2 IXGN 50N60BD3 Buck & boost configurations IGBT Preliminary data sheet .BD2 Test Conditions VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	50N60BD2 50N60BD3 OT-227B, IXGN50N60BD2 IXGN50N60BD3 0-06A 50N60BD3
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT with HiPerFRED IXGN 50N60BD2 IXGN 50N60BD3 Buck & boost configurations IGBT .BD2 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C	Original	PDF	50N60BD2 50N60BD3 OT-227B, IXGN50N60BD2 0-06A
DIN 46249 TERMINALS Abstract: ixgn50n100 1XGQ150N6QY3 IXGQ50N100Y4 Text: I X Y S CORP IS E D 4ti8b25fcj O O O O S S O T ]\/[OSBLOC MODULES The MOSBLOC family of isolated modules are designed for high power industrial and commercial applica tions requiring improved ruggedness and efficiency. They are available with either IXYS* advanced MOSIGBTs	OCR Scan	PDF	4ti8b25fcj DIN 46249 TERMINALS ixgn50n100 1XGQ150N6QY3 IXGQ50N100Y4
ixgr32n60cd1 Abstract: IXGT-32N60BD1 IXGH32N60CD1 IXGH24N60CD1 IXGH17N100AU1 IXGK50N60BD1 IXGH24N60BD1 IXGH40N30BD ixgh15n120cd1 IXGH32N60 Text: Discrete IGBTs with FRED Diode U r u G series C<25> min V A v T0-220(P CSH5A.T) max V typ ne PLUS247 (X) TO-268(T) ISOPLUS247™(R) TO-247(H) T0-204(M) TO-264(K) SOT-227B(N) J0 TO-263(A) ► NetV LOW SATURATION VOLTAGE TYPES 600 1000 40 2.0 200 IXGH28N60D1	OCR Scan	PDF	O-268 ISOPLUS247TM OT-227B T0-220 PLUS247TM O-263 O-247 T0-204 O-264 IXGA12N100U1 ixgr32n60cd1 IXGT-32N60BD1 IXGH32N60CD1 IXGH24N60CD1 IXGH17N100AU1 IXGK50N60BD1 IXGH24N60BD1 IXGH40N30BD ixgh15n120cd1 IXGH32N60
Untitled Abstract: No abstract text available Text: m yY V C •■¡I O jl IXGN 50N60BD2 IXGN 50N60BD3 HiPerFAST IGBT with HiPerFRED V CES ^C25 V CE sat t Buck & boost configurations = 600 V = 75 A = 2.5 V = 150 ns IGBT .BD2 Symbol TestC onditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V CGR	OCR Scan	PDF	50N60BD2 50N60BD3 IXGN50N60BD2 120AlF=
IXGN40N60 Abstract: IXGH24N60CD1 IXGR39N60BD1 ixgr32n60cd1 Text: Discrete IGBT with FAST Diodes WifaH High Speed Series VcES V C<25 A VCE SAT) max V t typ ns TO-220 (P) JP TO-263 (A) PLUS247 (X) TO-247 (H) ► Ne w TO-268 AA T0 -2 04 (T) (M) ♦ ra ^ ISOPLUS220 ISOPLUS247™(R) SOT-2^ TO-264 (K) PLUS264™ (B) LOW SATU RATION VOLTAGE TYPES	OCR Scan	PDF	ISOPLUS247TM O-220 PLUS247TM O-263 O-268 O-247 ISOPLUS220 O-264 PLUS264TM IXGA12N100U1* IXGN40N60 IXGH24N60CD1 IXGR39N60BD1 ixgr32n60cd1
IXGH30N50A Abstract: IXGH20N50A IXGP10N50A IXGH20N50 IXGH25N80A ixgh40n60 IXGP10N60A Amp. mosfet 1000 watt IXGH25N90A IXGM30N60 Text: IXYS' MOSIGBT combines the best characteristics ofPower MOSFET and bipolar devices on a single mono lithic chip.The MOS gated input allows the MOSIGBT to be voltage driven like a MOSFET The complexity and cost of the drive circuitiy is greatly reduced. Since the MOSIGBT uses	OCR Scan	PDF	4bflb55b IXGH30N50A IXGH20N50A IXGP10N50A IXGH20N50 IXGH25N80A ixgh40n60 IXGP10N60A Amp. mosfet 1000 watt IXGH25N90A IXGM30N60
Ixgr50n60 Abstract: IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C Text: Discrete ÌGBT Ultra Hi9h Speed 9" Suffix c High Speed Series vT ces C<2S V A VCE SAT) max V »n typ ns T 0 -2 2 0 PLUS247 (X) " TO-263 (A) I3-Pac (J) TO-247 (H) J ♦ ► Ne yv TO-268AA TO-204 (T) (M) ISOPLUS22Û lSOPLUS247™{R) SOT-227B (N) TO-264 (K)	OCR Scan	PDF	O-263 PLUS247TM O-247 IXGH28N60B IXGH31N60 O-268AA O-204 lSOPLUS247TM OT-227B IXGA20N120 Ixgr50n60 IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C