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    IXYS Corporation IXGH25N100U1

    IGBT Transistors 1000V 50A
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    IXGH25N100U1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGH25N100U1 IXYS 1000V low voltage high speed IGBT with diode Original PDF

    IXGH25N100U1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary data Low VCE sat High speed IGBT with Diode VCES IXGH25N100U1 1000 V IXGH25N100AU1 1000 V IC25 VCE(sat) 50 A 50 A 3.5 V 4.0 V TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF IXGH25N100U1 IXGH25N100AU1 O-247 IXGH25N100AU1

    25N100

    Abstract: IXGH25N100AU1 IXGH25N100U1 25N100U
    Text: Preliminary data Low VCE sat High speed IGBT with Diode VCES IXGH25N100U1 1000 V IXGH25N100AU1 1000 V IC25 VCE(sat) 50 A 50 A 3.5 V 4.0 V TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF IXGH25N100U1 IXGH25N100AU1 O-247 IXGH25N100AU1 25N100 25N100U

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Preliminary data Low -u vv V v ICE sat High speed IGBT with Diode V " ces 1000 V IXGH25N100U1 IXGH25N100AU1 1000 V ^C25 50 A 50 A V v CE(sat) 3.5 V 4.0 V TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES ^ v CGR Tj = 25°C to 150°C; RGE = 1 M£i


    OCR Scan     		PDF IXGH25N100U1 IXGH25N100AU1 O-247 IXGH25N100U1 IXGH25N100AU1

    s2555

    Abstract: No abstract text available
    Text: Preliminary data v Low i_ w r v v V * C E s a t High speed IGBT with Diode CES IXGH25N100U1 1000 V IXGH25N100AU1 1000 V ^C 25 50 A 50 A v ¥ CE (sat) 3.5 V 4.0 V TO-247 AD (IXGH) Symbol Test C onditions v CES J j = 25°C to 150°C 1000 V v CGR Td = 25°C to 150°C; RGE = 1 MO


    OCR Scan     		PDF IXGH25N100U1 IXGH25N100AU1 O-247 XGH25N1Ô s2555

    ixgr32n60cd1

    Abstract: IXGT-32N60BD1 IXGH32N60CD1 IXGH24N60CD1 IXGH17N100AU1 IXGK50N60BD1 IXGH24N60BD1 IXGH40N30BD ixgh15n120cd1 IXGH32N60
    Text: Discrete IGBTs with FRED Diode U r u G series *C<25> min V A v T0-220(P CSH5A.T) max V typ ne PLUS247 (X) TO-268(T) ISOPLUS247™(R) TO-247(H) T0-204(M) TO-264(K) SOT-227B(N) J0* TO-263(A) ► NetV LOW SATURATION VOLTAGE TYPES 600 1000 40 2.0 200 IXGH28N60D1


    OCR Scan     		PDF O-268 ISOPLUS247TM OT-227B T0-220 PLUS247TM O-263 O-247 T0-204 O-264 IXGA12N100U1 ixgr32n60cd1 IXGT-32N60BD1 IXGH32N60CD1 IXGH24N60CD1 IXGH17N100AU1 IXGK50N60BD1 IXGH24N60BD1 IXGH40N30BD ixgh15n120cd1 IXGH32N60