12N100A
Abstract: 12n100 IXGH12N100 IXGH12N100A
Text: Low VCE sat IGBT High Speed IGBT Symbol Test Conditions VCES IXGH 12N100 IXGH 12N100A Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C
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12N100
12N100A
O-247AD
Mounti00
IXGH12N100/A
IXGH12N100U/AU1
12N100A
12n100
IXGH12N100
IXGH12N100A
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STR-G6551
Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision
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2002-Sep.
STR-G6551
STR-F6654
g6551
TDA16822
STR-F6653
strg6551
IGBT cross reference
KA5M0565R
TOP224Y equivalent
BUP 312
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IXGD32N60B-5X
Abstract: ixgh45n120 IXGH24N60B IXGH50N60B IXGH32N60B
Text: Insulated Gate Bipolar Transistors IGBT-Chips Type VCES VCE sat @ IC Cies typ. tfi typ. ns Chip type Chip size dimensions High Speed Low VCE(sat) TJM = 150°C mm Source bond wire recommend Equivalent device data sheet Dim. outline No. V V A pF mils IXGD28N30-43
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IXGD28N30-43
IXGD40N30-5X
IXGD12N60B-3X
IXGD31N60-4X
IXGD41N60-5X
IXGD60N60-7Y
IXGD200N60B-9X
IXGD2N100-1M
IXGD4N100-1T
IXGD8N100-2L
IXGD32N60B-5X
ixgh45n120
IXGH24N60B
IXGH50N60B
IXGH32N60B
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Untitled
Abstract: No abstract text available
Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack Symbol Test Conditions VCES IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30
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12N100U1
12N100AU1
O-247AD
IXGH12N100U1
IXGH12N100AU1
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IXFd50n20
Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type
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IXGH12N100AU1
Abstract: IXGH12N100U1
Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack Symbol Test Conditions VCES IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30
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12N100U1
12N100AU1
O-247AD
IXGH12N100U1
IXGH12N100AU1
IXGH12N100AU1
IXGH12N100U1
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12n100
Abstract: No abstract text available
Text: Low VCE sat IGBT High Speed IGBT Symbol Test Conditions VCES IXGH 12N100 IXGH 12N100A Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C
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12N100
12N100A
O-247AD
O-247
IXGH12N100/A
IXGH12N100U/AU1
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Untitled
Abstract: No abstract text available
Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack Symbol Test Conditions VCES IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30
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12N100U1
12N100AU1
O-247AD
IXGH12N100U1
IXGH12N100AU1
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4453 smd
Abstract: to247 f tab 4453
Text: v Low c E s 3 t IGBT ^ High Speed IGBT 1000 V 24 A IXGH 12 N10O IXGH12N100A 1000 V 24 A . Symbol Test Conditions V * CES T, = 25°C to 150°C 1000 V V C6R ^ = 25°C to 150°C; RGE = 1 Mfi 1000 V v GES Continuous ±20 V vt g e m Transient ±30 V ^C25 T c = 25°C
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IXGH12N100A
O-247
TQ-247SMD
O-247AD
4453 smd
to247 f
tab 4453
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Untitled
Abstract: No abstract text available
Text: IGBT with Diode CES IXGH12N100U1 IXGH 12N100AU1 L O W V CE S« | High Speed OC Jj K g 1000 V 1000 V Test Conditions V VCGR Tj Tj v OES VGEM Continuous Transient ^C25 ^CM Tc =25=C Tc =90°C T c = 25° C, 1 ms SSOA (RBSOA VG6 = 1 5 V ,T VJ= 125° C, RG= 1 5 0 Q
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IXGH12N100U1
12N100AU1
O-247
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IXGD40N60A
Abstract: 1XGH10N60 xgh10n60a IXGD30N60 IXGD10N60 IXGH40N60 IXGH50N60A 1X57 IXGD40N60 IXGH60N60
Text: IXYS Insulated Gate Bipolar Transistors IGBT-Chips Type e» High Speed Low T j. s is ir c £ tn typ 28°C ns C hip typ V V A S* IXGD28N30 IXGD40N30 300 1.8 1.45 20 20 1500 2500 180 220 1X43 1X57 IXGD10N60 IXGD20N60 IXGD31N60 IXGD30N60 IXGD38N60 IXGD40N60
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IXGD28N30
IXGD40N30
IXGD10N60
IXGD20N60
IXGD31N60
IXGD30N60
IXGD38N60
IXGD40N60
IXGD60N60
IXGD200N60
IXGD40N60A
1XGH10N60
xgh10n60a
IXGH40N60
IXGH50N60A
1X57
IXGH60N60
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T0247AC
Abstract: IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 electronics CunoBbie TpaH3MCTopbi IGBT copTMpoBKa no HanpflweHMro UCE TpaH3Mcrop IGBT (Insulated Gate Bipolar Transistor) npeflCTaBrmeT c o 6 om 6 M n o r m p H b iM T p a H 3 M C T o p c M3 o n M p o B a H H H M 3 a T B o p o M , y n p a B r m e M b iM H a n p a ^ e H M e M . O h x a p a K T e p M 3y e T c a b h c o k m m
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B03M0WH0CTb
npe06pa30Baiennx
paUP212
T0220AB
BUP213
BUP313
T0218AB
BUP313D
T0247AC
IRG4PC50FD
T0-220AB
bup314
T0-247AC
bup314d
IRG4BC40U
T0220AB
IRG4PC50UD
BUP212
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IGBT 200A 1200V
Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D
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bup203
t0220)
BUP212
BUP213
BUP313
BUP313D
BUP314
BUP314D
GT20D101-T0s
GT20D201-T0s
IGBT 200A 1200V
T0247
T0220AB
BUP313D
IGBT IRG4BC20KD
igbt 20A 1200v
IGBT 1200V 60A
T0247A
BUP314D
MG50Q2YS40
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Untitled
Abstract: No abstract text available
Text: □ I X Y S Low VrP, IGBT with Diode CE sat High Speed IGBT with Diode Combi Pack v CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Maximum Ratings Symbol Test Conditions V v CES V CGR Td = 25°C to 150°C
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12N100U1
12N100AU1
O-247
IXGH12N100U1
IXGH12N100AU1
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IXGN40N60
Abstract: IXGH24N60CD1 IXGR39N60BD1 ixgr32n60cd1
Text: Discrete IGBT with FAST Diodes WifaH High Speed Series VcES V *C<25 A VCE SAT) max V t* typ ns TO-220 (P) JP TO-263 (A) PLUS247 (X) TO-247 (H) ► Ne w TO-268 AA T0 -2 04 (T) (M) ♦ ra ^ ISOPLUS220 ISOPLUS247™(R) SOT-2^ TO-264 (K) PLUS264™ (B) LOW SATU RATION VOLTAGE TYPES
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ISOPLUS247TM
O-220
PLUS247TM
O-263
O-268
O-247
ISOPLUS220
O-264
PLUS264TM
IXGA12N100U1*
IXGN40N60
IXGH24N60CD1
IXGR39N60BD1
ixgr32n60cd1
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Untitled
Abstract: No abstract text available
Text: OIXYS V CES Low VCE ,i(| IGBT High Speed IGBT IXGH 12 N100 IXGH 12 N100A e _ Symbol Test Conditions VCES Tj = $ Maximum Ratings 25°C to 150°C 1000 v CGR Tj = 25°C to 150°C; RGE = 1 MQ 1000 V Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 24 A
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N100A
O-247
-247S
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IXGH24N50B
Abstract: IXGH50N60B IXGH32N60B IXGH50N60A ixgh24n60a equivalent IXGH24N60A IXGH17N100
Text: nixYS Insulated Gate Bipolar Transistors IGBT-Chips v Type •• c «V- Chip typ - tn » Chip s o b dbnemtons Source bm d wire »C Tj„ = l&O'C TO Equivalent device datasheet Dim. out line V V A pF IXGD28N30-43 IXGD40N30-5X 300 2.1 1.5 20 20 1500 2500
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IXGD28N30-43
IXGD40N30-5X
IXGD12N60B-33
IXGD31N60-4X
IXGD41N60-5X
IXGD60N60-7X
IXGD200N60-9X
IXGD8N100-2L
IXGD12N100-33
IXGD17N100-4T
IXGH24N50B
IXGH50N60B
IXGH32N60B
IXGH50N60A
ixgh24n60a equivalent
IXGH24N60A
IXGH17N100
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D 819
Abstract: No abstract text available
Text: □1XYS Preliminary Data Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack V CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Symbol Test C onditions V CES Tj = 25°C to 150°C 1000 V
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12N100U1
12N100AU1
24SBSC
T0-247
D 819
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1-20Q
Abstract: AD 483 D 819
Text: □IXYS V CES Low VCE sat IGBT High Speed IGBT IXGH 12 N100 IXGH 12N100A Maximum Ratings Sym bol Test C onditions V CES Td = 25°C to 150°C 1000 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 1000 V v GES v GEM Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C
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N100A
247AD
1-20Q
AD 483
D 819
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Untitled
Abstract: No abstract text available
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 C u n o B b ie T p a H 3 M C T o p b i IG B T IX Y S C #epa npMMeHeHMa: b n po M biw ne rn-ib ix ycTaHOBKax M a n o fi m cpeflHeM m o w ,h o c tm , b npMBOAHbix CMCTeMax, b yd p o M C T B a x ynpaB ^eH M a, b 6 ecn p0B 0A H bix 6 no K ax riMTaHMA Arm
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3S88SSS588S8888gÂ
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Ixgr50n60
Abstract: IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C
Text: Discrete ÌGBT Ultra Hi9h Speed 9" Suffix c High Speed Series vT ces *C<2S V A VCE SAT) max V »n typ ns T 0 -2 2 0 PLUS247 (X) " TO-263 (A) I3-Pac (J) TO-247 (H) J* ♦ ► Ne yv TO-268AA TO-204 (T) (M) ISOPLUS22Û lSOPLUS247™{R) SOT-227B (N) TO-264 (K)
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O-263
PLUS247TM
O-247
IXGH28N60B
IXGH31N60
O-268AA
O-204
lSOPLUS247TM
OT-227B
IXGA20N120
Ixgr50n60
IXGN60N60
IXGX120N60B
ISOPLUS247TM
IXGR40N60
IXGH60N60
ixgh32n170
ixgh35n120
IXGA20N60B
IXGP12N60C
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PH2001
Abstract: P12N100
Text: IGBT L0W VCES 1000 V! 24 A 1000 v! 24 A IXGA / IX G P 12N100 IXGA / IX G P 12N100A V CE S. t | High speed IGBT ^C25 V CE(sat 3.5 V 4.0 V OC Symbol Test C onditions Maximum Ratings V CES Td = 25°C to 150°C 1000 V v CGR T,J = 2 5 °C to 150°C; FLGc =1 MQ
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12N100
12N100A
O-220
O-263
PH2001
P12N100
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