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    IXFT26N50 Price and Stock

    IXYS Corporation IXFT26N50

    MOSFET N-CH 500V 26A TO268
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    DigiKey IXFT26N50 Tube 30
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    Mouser Electronics IXFT26N50
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    IXYS Corporation IXFT26N50Q

    MOSFET N-CH 500V 26A TO268
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    IXYS Corporation IXFT26N50Q-TR

    MOSFET N-CH 500V 26A TO268
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    DigiKey IXFT26N50Q-TR Reel
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    IXFT26N50 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFT26N50 IXYS 500V HiPerFET power MOSFET Original PDF
    IXFT26N50Q IXYS 500V HiPerFET power MOSFET Q-class Original PDF
    IXFT26N50Q TR IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 26A TO268 Original PDF

    IXFT26N50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    21n50

    Abstract: ixfh 26 n 49
    Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous


    Original     		PDF IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 21N50 24N50 26N50 ixfh 26 n 49

    104 k 100

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous


    Original     		PDF IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 21N50 24N50 26N50 104 k 100

    24n50

    Abstract: IXFH26N50 IXFH24N50 IXFH21N50 .24n50 21N50 26N50 IXFM21N50 IXYS IXFH26N50
    Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V V GS


    Original     		PDF IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 24n50 IXFH26N50 IXFH24N50 IXFH21N50 .24n50 21N50 26N50 IXFM21N50 IXYS IXFH26N50

    IXFH21N50

    Abstract: IXFH24N50 0225 21N50 24N50 26N50 IXFM21N50
    Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS


    Original     		PDF IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 O-247 IXFH21N50 IXFH24N50 0225 21N50 24N50 26N50 IXFM21N50

    IXFH26N50

    Abstract: IXFH21N50
    Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS


    Original     		PDF IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 IXFH26N50 IXFH21N50

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80

    IXFH21N50

    Abstract: No abstract text available
    Text: HiPerFET Power MOSFETs IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, L o w trr, HDM O S™ Family Maximum Ratings Test Conditions V DSS T d = 25°C to 150°C 500 V v DGR T d = 25°C to 150°C; RGS = 1 M£i 500


    OCR Scan     		PDF IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 O-247 IXFT24N50 IXFH26N50 IXFM26N50 IXFT26N50 IXFH21N50

    ixys ml 075

    Abstract: TXYS aj 312
    Text: HiPerFET Power MOSFETs IXFH26N50Q IXFT26N50Q VD S S ^D25 trr <250 ns N-Channel Enhancement Mode AvalancheRated Low Qg,High dv/dt vDSS VDGR Vss vGSM Test Conditions Maxim um R atings Tj = 25°C to 150°C 500 V TJ = 25°C to 150°C; RGS= 1 MO 500 V Continuous


    OCR Scan     		PDF IXFH26N50Q IXFT26N50Q O-24T O-268 ixys ml 075 TXYS aj 312

    ne 22 mosfet

    Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
    Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)


    OCR Scan     		PDF ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50