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IXYS Corporation IXFR50N50 MOSFET N-CH 500V 43A ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFR50N50	Tube			30	1 - 10 - 100 $14.225 1000 $14.225 10000 $14.225	Buy Now
Mouser Electronics	IXFR50N50					1 - 10 - 100 - 1000 - 10000 -	Get Quote

IXFR50N50 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFR50N50		IXYS	500V HiPerFET power MOSFET		Original	PDF
IXFR50N50		IXYS	HiPerFET Power MOSFETs ISOPLUS247		Scan	PDF

IXFR50N50 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
50n50 Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface ID25 500 V 43 A 500 V 48 A trr £ 250 ns RDS(on) 100 mW 80 mW Single MOSFET Die Preliminary data Symbol Test Conditions VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW	Original	PDF	ISOPLUS247TM 50N50 55N50 55N50 247TM
IXAN0009 Abstract: 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w Text: IXAN0009 HOW TO DRIVE MOSFETs AND IGBTs INTO THE 21ST CENTURY By Mr. Abhijit D. Pathak and Mr. Ralph E. Locher, IXYS Corporation Santa Clara, CA 95054 ABSTRACT As the industry pushes for higher power levels and higher switching frequencies, power supplies, which use MOSFETs/IGBTs for power	Original	PDF	IXAN0009 IXAN0009 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w
sd 20n60 Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06	Original	PDF	O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface ID25 500 V 43 A 500 V 48 A trr £ 250 ns RDS(on) 100 mW 80 mW Single MOSFET Die Preliminary data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW	Original	PDF	ISOPLUS247TM 50N50 55N50 55N50 247TM
50n50 Abstract: No abstract text available Text: aixYS Advanced Technical Information v HiPerFET Power MOSFETs ISOPLUS247™ IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface DSS p ^D25 500 V 43 A 500 V 48 A trr <250 ns DS(on) 100 mi] 80 m£2 Single MOSFET Die Symbol Test Conditions Maximum Ratings	OCR Scan	PDF	ISOPLUS247TM 50N50 55N50 Cto150 55N50
50n50 Abstract: IXFK55N50 ISOPLUS247 55n50 Text: Advanced Technical Information □ IX Y S V DSS HiPerFET Power MOSFETs ISOPLUS247™ IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface D ^D25 500 V 43 A 500 V 48 A t rr < 250 ns DS(on) 100 mQ 80 mQ Single MOSFET Die Symbol TestConditions v Tj = 25°C to 150°C	OCR Scan	PDF	ISOPLUS247â 50N50 55N50 55N50 IXFK55N50 ISOPLUS247
ne 22 mosfet Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50 Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)	OCR Scan	PDF	ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50