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    IXFN32N120 Search Results

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    IXFN32N120 Price and Stock

    Littelfuse Inc IXFN32N120P

    MOSFET N-CH 1200V 32A SOT-227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFN32N120P Tube 400 1
    • 1 $65.74
    • 10 $55.685
    • 100 $55.685
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    Verical IXFN32N120P 230 1
    • 1 $65.46
    • 10 $55.02
    • 100 $54.38
    • 1000 $54.38
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    Arrow Electronics IXFN32N120P 230 54 Weeks 1
    • 1 $65.46
    • 10 $55.02
    • 100 $54.38
    • 1000 $54.38
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    Newark IXFN32N120P Bulk 300
    • 1 -
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    • 100 $58.36
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    RS IXFN32N120P Bulk 8 Weeks 10
    • 1 -
    • 10 $86.13
    • 100 $86.13
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    IXYS Corporation IXFN32N120

    MOSFET N-CH 1200V 32A SOT-227B
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    DigiKey IXFN32N120 Box 10
    • 1 -
    • 10 $27.366
    • 100 $27.366
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    Newark IXFN32N120 Bulk 1
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    IXYS Corporation IXFN32N120P

    MOSFET Modules 32 Amps 1200V
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    Mouser Electronics IXFN32N120P 602
    • 1 $65.74
    • 10 $55.68
    • 100 $55.68
    • 1000 $55.68
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    TTI IXFN32N120P Tube 300
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    • 1000 $55.69
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    TME IXFN32N120P 1
    • 1 $85.73
    • 10 $68.04
    • 100 $68.04
    • 1000 $68.04
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    New Advantage Corporation IXFN32N120P 16 1
    • 1 -
    • 10 $137.26
    • 100 $128.11
    • 1000 $128.11
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    IXYS Integrated Circuits Division IXFN32N120P

    MOSFET MOD.32A 1200V N-CH SOT227B HIPERFET CHASSIS
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    Ozdisan Elektronik IXFN32N120P 20
    • 1 $103.27159
    • 10 $96.5155
    • 100 $96.5155
    • 1000 $96.5155
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    IXFN32N120 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFN32N120 IXYS Discrete MOSFETs: HiPerFET Power MOSFETS Original PDF
    IXFN32N120P IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1200V 32A SOT-227B Original PDF

    IXFN32N120 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET IXFN32N120P VDSS = 1200V 32A ID25 = Ω RDS on ≤ 0.31Ω ≤ 300 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFN32N120P 32N120P

    32N120P

    Abstract: ixfn32n120p IXFN32N120
    Text: PolarTM Power MOSFET HiPerFETTM IXFN32N120P VDSS = 1200V ID25 = 32A Ω RDS on ≤ 310mΩ ≤ 300ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFN32N120P 300ns 32N120P 4-03-08-B ixfn32n120p IXFN32N120

    IXFN32N120P

    Abstract: 32N120P 32N120
    Text: IXFN32N120P PolarTM HiPerFETTM Power MOSFET VDSS = 1200V ID25 = 32A Ω RDS on ≤ 310mΩ ≤ 300ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol miniBLOC E153432 Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFN32N120P 300ns E153432 Nm/l100 100ms 32N120P 3-04-10-D IXFN32N120P 32N120

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    1200 volt mosfet

    Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
    Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET


    Original     		PDF 000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P