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IXFN20N120 Price and Stock

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IXYS Corporation IXFN20N120 MOSFET N-CH 1200V 20A SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN20N120	Tube			10	1 - 10 $19.527 100 $19.527 1000 $19.527 10000 $19.527	Buy Now
Mouser Electronics	IXFN20N120					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Littelfuse Inc IXFN20N120P MOSFET N-CH 1200V 20A SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN20N120P	Tube			300	1 - 10 - 100 - 1000 $34.431 10000 $34.431	Buy Now
Newark	IXFN20N120P	Bulk			300	1 - 10 - 100 - 1000 $36.09 10000 $36.09	Buy Now
RS	IXFN20N120P	Bulk		8 Weeks	10	1 - 10 $53.25 100 $53.25 1000 $53.25 10000 $53.25	Get Quote
IXYS Corporation IXFN20N120P MOSFET Modules 20 Amps 1200V 0.6 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFN20N120P					1 - 10 - 100 - 1000 $37.55 10000 $37.55	Get Quote
TTI	IXFN20N120P	Tube			300	1 - 10 - 100 - 1000 $34.77 10000 $34.77	Buy Now
TME	IXFN20N120P		27		1	1 $46.92 10 $39.31 100 $39.31 1000 $39.31 10000 $39.31	Buy Now
New Advantage Corporation	IXFN20N120P		7		1	1 - 10 $79.54 100 $79.54 1000 $79.54 10000 $79.54	Buy Now

IXFN20N120 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFN20N120		IXYS	Discrete MOSFETs: HiPerFET Power MOSFETS		Original	PDF
IXFN20N120P		IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1200V 20A SOT-227B		Original	PDF

IXFN20N120 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
20N120P Abstract: No abstract text available Text: VDSS ID25 IXFN20N120P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous	Original	IXFN20N120P 300ns OT-227 E153432 20N120P 04-03-08-B	PDF
20N120P Abstract: IXFN20N120P Text: IXFN20N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous	Original	IXFN20N120P 300ns OT-227 E153432 20N120P 04-03-08-B IXFN20N120P	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original		PDF
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P	PDF