IXFM13N50 Search Results

IXFM13N50 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFM13N50		IXYS	500V HiPerFET power MOSFET		Original	PDF
IXFM13N50		IXYS	HiperFET Power MOSFETS		Scan	PDF
IXFM13N50		Unknown	Shortform Datasheet & Cross References Data		Short Form	PDF

IXFM13N50 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXFH15N100 Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80 Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP	Original	PDF	IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
dioda by 238 Abstract: 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100 Text: I X Y S CORP IñE D • 4bflb22b 0000573 1 ■ HiPerFETs_ The HiPerFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling" rectifiers in a broad range of power switching	OCR Scan	PDF	0D00S73 dioda by 238 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100
mosfet 4800 Abstract: ixfn27n80 150N10 IXFN44N50 RD5A Co701 4800 power mosfet IXFN36n60 ixfm40n30 ixfm35n30 Text: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode T jm = 150°C >- New V DSS max. V P ' d 25 Tc = 25°C A DS(on) Tc = 25°C Q typ. C rss typ. max. ° 9 typ. PF pF rts nC C iss p thJC PD max. K/W W 7 >- IXFN 200N06 60 200 0.0055	OCR Scan	PDF	200N06 200N07 150N10 100N20 106N20 73N30 44N50 48N50 58N50 61N50 mosfet 4800 ixfn27n80 150N10 IXFN44N50 RD5A Co701 4800 power mosfet IXFN36n60 ixfm40n30 ixfm35n30
1XFH12n100 Abstract: transistor 13n80 Text: MbE D • 4bflb22b G O D D E S S 4 HIXY I X Y S CORP T - l V l S □IXYS Data Sheet No. 91532A October 1991 HiPerFET POWER MOSFETs N-Channel, High dv/dt, Low trr, HDMOS™ Fam ily C haracteristics Features * Low RDS{on HDMOS™ Process • Rugged Polysilicon Gate Ceil Structure	OCR Scan	PDF	4bflb22b 1532A 200ns) IXFH12N100 IXFH10N100 IXFM12N100 IXFM10N100 1XFH12n100 transistor 13n80
TL 650 ht Abstract: mbab diode sy 166 ditti IXFH26N50 MKL series IXFN15N100 IXFMS0N20 IXFH12N100 IXFH5N100 Text: I X Y S CÔRP lûE D • 4bSL22b Q00Q573 1 ■ f JiPerFETs_ The HIPerFET family of Power MOSFETs Is designed to provide superior dv/dt performance while eliminating th e need for discrete, fast recoveiy “free wheeling" rccllfiers in a broad range of power switching	OCR Scan	PDF	4bfid22b O-204 O-284 TL 650 ht mbab diode sy 166 ditti IXFH26N50 MKL series IXFN15N100 IXFMS0N20 IXFH12N100 IXFH5N100
ne 22 mosfet Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50 Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)	OCR Scan	PDF	ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50