IXFX55N50F
Abstract: IXFK55N50F ixfn*55N50F 55N50F IXFN55N50F PLUS247
Text: Advance Technical Information IXFK55N50F IXFX55N50F HiPerRFTM Power MOSFETs VDSS ID25 = = 500V 55A Ω 85mΩ 250ns RDS on ≤ ≤ trr F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated Low Qg, Low Intrinsic Rg High dV/dt, Low trr TO-264 (IXFK)
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IXFK55N50F
IXFX55N50F
250ns
O-264
IXFX55N50F
IXFK55N50F
ixfn*55N50F
55N50F
IXFN55N50F
PLUS247
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information HiPerRFTM Power MOSFETs VDSS ID25 IXFK55N50F IXFX55N50F = = 500V 55A Ω 85mΩ 250ns RDS on ≤ ≤ trr F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated Low Qg, Low Intrinsic Rg High dV/dt, Low trr TO-264 (IXFK)
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IXFK55N50F
IXFX55N50F
250ns
O-264
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50n50
Abstract: 55N50 150N50 IXFK55N50
Text: VDSS HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface ID25 RDS(on) Ω 100 mΩ Ω 90 mΩ 500 V 43 A 500 V 48 A trr ≤ 250 ns Single Die MOSFET Maximum Ratings ISOPLUS 247TM Symbol Test Conditions VDSS VDGR
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ISOPLUS247TM
50N50
55N50
247TM
IXFK55N50
50N50
55N50
150N50
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET IXFK 55N50 IXFX 55N50 IXFN 55N50 VDSS ID25 RDS on t rr Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C 500 500 V V VGSS VGSM Continuous Transient ±20 ±30 V V ID25 IDM TC = 25°C
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55N50
PLUS247
O-264
IXFX55N50
IXFN55N50
125OC
IXFK55N50/IXFX55N50
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IXFG 55N50
Abstract: ISO264 ISO264TM IXFK55N50 55N50
Text: HiPerFETTM Power MOSFETs IXFG 55N50 ISOPLUS247TM Electrically Isolated Back Surface VDSS ID25 RDS(on) = 500 V = 48 A = 90 mΩ Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500
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55N50
ISOPLUS247TM
ISO264TM
ISO264
IXFK55N50
728B1
123B1
728B1
065B1
IXFG 55N50
ISO264TM
55N50
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IXFH32N50Q equivalent
Abstract: ixfk24n100 IXFD80N20Q-8X IXFN80N50 1672 mos-fet IXFH40N30
Text: HiPerFETTM Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss trr max. Chip type Chip size dimensions Source ¬ bond wire recommend Equivalent device data sheet Dim. outline No. V Ω
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IXFD50N20-7X
IXFD50N20Q-7X
IXFD80N20Q-8X
IXFD90N20Q-8Y
IXFD120N20-9X
IXFD180N20-9Y
IXFD60N25Q-8X
IXFD100N25-9X
IXFD40N30-7X
IXFD40N30Q-7X
IXFH32N50Q equivalent
ixfk24n100
IXFN80N50
1672 mos-fet
IXFH40N30
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Untitled
Abstract: No abstract text available
Text: VDSS HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface ID25 RDS(on) Ω 100 mΩ Ω 90 mΩ 500 V 43 A 500 V 48 A trr ≤ 250 ns Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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ISOPLUS247TM
50N50
55N50
IXFK55N50
50N50
55N50
728B1
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IXTD08N100P-1A
Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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ixys ixfn 55n50
Abstract: 50n50 IXFK50N50 IXFN50N50 IXFK55N50 IXFN55N50
Text: HiPerFETTM Power MOSFET IXFN IXFN IXFK IXFK Single Die MOSFET 55N50 50N50 55N50 50N50 VDSS ID25 RDS on 500V 500V 500V 500V 55A 50A 55A 50A 80mΩ 100mΩ 80mΩ 100mΩ trr 250ns 250ns 250ns 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK)
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55N50
50N50
250ns
O-264
ixys ixfn 55n50
50n50
IXFK50N50
IXFN50N50
IXFK55N50
IXFN55N50
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50n50
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface ID25 500 V 43 A 500 V 48 A trr £ 250 ns RDS(on) 100 mW 80 mW Single MOSFET Die Preliminary data Symbol Test Conditions VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW
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ISOPLUS247TM
50N50
55N50
55N50
247TM
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IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
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AO4405
AO4407
AO4408
AO4409
AO4410
AO4411
AO4413
AO4415
AO4422
AO4700
IRF1830G
IRF1830
transistor IRF1830G
APM2054N equivalent
apm2054n
AP85L02h
AP70N03S
2SK3683
ap70l02h
2SK2696
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFG 55N50 ISOPLUS247TM Electrically Isolated Back Surface VDSS ID25 RDS(on) = 500 V = 48 A = 90 mΩ Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500
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55N50
ISOPLUS247TM
ISO264
IXFK55N50
728B1
123B1
728B1
065B1
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IXAN0009
Abstract: 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w
Text: IXAN0009 HOW TO DRIVE MOSFETs AND IGBTs INTO THE 21ST CENTURY By Mr. Abhijit D. Pathak and Mr. Ralph E. Locher, IXYS Corporation Santa Clara, CA 95054 ABSTRACT As the industry pushes for higher power levels and higher switching frequencies, power supplies, which use MOSFETs/IGBTs for power
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IXAN0009
IXAN0009
0009
ixan0009 2
ixan0009 3
TMS320F2407a
GE SCR Manual
mosfet inverter 2kW 100khz
smps 1kW
schematic diagram inverter 500w USING MOSFET
schematic diagram PWM inverter 500w
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ixys ixfn 55n50
Abstract: ixys ixfn55n50 IXFK50N50
Text: HiPerFETTM Power MOSFET IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die VDSS I D25 RDS on t rr 500V 500V 500V 500V 55A 80mW 250ns 50A 100mW 250ns 55A 80mW 250ns 50A 100mW 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK) Maximum Ratings
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55N50
50N50
50N50
250ns
100mW
ixys ixfn 55n50
ixys ixfn55n50
IXFK50N50
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MD 202
Abstract: IXFX55N50 IXFK55N50 SOT-227B Outline IXFN55N50 55N50 "SOT-227 B" dimensions PLUS247 55n5
Text: IXFK 55N50 IXFX 55N50 IXFN 55N50 HiPerFETTM Power MOSFET VDSS ID25 RDS on t rr Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C 500 500 V V VGSS VGSM Continuous Transient ±20 ±30 V V ID25 IDM TC = 25°C
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55N50
PLUS247
O-264
IXFX55N50
IXFN55N50
125OC
IXFK55N50/IXFX55N50
MD 202
IXFX55N50
IXFK55N50
SOT-227B Outline
IXFN55N50
55N50
"SOT-227 B" dimensions
55n5
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sd 20n60
Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06
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O-247
PLUS247
ISOPLUS247TM
O-268
O-264
80N06-11
76N07-11
76N07-12
100N10
170N10
sd 20n60
IXFX 44N80
20n80
60n60
9n80
C2625
power mosfet 100n20
IXFH32N50
230N10
8N80
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IXFd50n20
Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface ID25 500 V 43 A 500 V 48 A trr £ 250 ns RDS(on) 100 mW 80 mW Single MOSFET Die Preliminary data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
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ISOPLUS247TM
50N50
55N50
55N50
247TM
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55n50
Abstract: ixys ixfn 55n50 IXFK50N50
Text: HiPerFETTM Power MOSFET IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die VDSS I D25 RDS on t rr 500V 500V 500V 500V 55A 80mW 250ns 50A 100mW 250ns 55A 80mW 250ns 50A 100mW 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK) Maximum Ratings
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55N50
50N50
50N50
250ns
100mW
ixys ixfn 55n50
IXFK50N50
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet D V DSS HiPerFET Power MOSFET IXFN IXFN IXFK IXFK Single MOSFET Die 55N50 50N50 55N50 50N50 500V 500V 500V 500V K DS on ^D25 55A 50A 55A 50A 85m Q 100m£2 85m£2 100m£2 250ns 250ns 250ns 250ns TO-264 AA (IXFK) Symbol Maximum Ratings
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OCR Scan
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250ns
250ns
55N50
50N50
50N50
O-264
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50n50
Abstract: No abstract text available
Text: aixYS Advanced Technical Information v HiPerFET Power MOSFETs ISOPLUS247™ IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface DSS p ^D25 500 V 43 A 500 V 48 A trr <250 ns DS(on) 100 mi] 80 m£2 Single MOSFET Die Symbol Test Conditions Maximum Ratings
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ISOPLUS247TM
50N50
55N50
Cto150
55N50
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50n50
Abstract: IXFK55N50 ISOPLUS247 55n50
Text: Advanced Technical Information □ IX Y S V DSS HiPerFET Power MOSFETs ISOPLUS247™ IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface D ^D25 500 V 43 A 500 V 48 A t rr < 250 ns DS(on) 100 mQ 80 mQ Single MOSFET Die Symbol TestConditions v Tj = 25°C to 150°C
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ISOPLUS247â
50N50
55N50
55N50
IXFK55N50
ISOPLUS247
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IXFN40N50
Abstract: No abstract text available
Text: DIXYS IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die rr Test Conditions Maximum Ratings IXFK IXFN IXFN 50 55 50 IXFK 55 Td = 25°C to 150°C T j = 25°C to 150°C 500 500 500 500 V V VGS v GSM Continuous Transient ±20 ¿30 ±20 ±30 V V »D25
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IXFN55N50
IXFN50N50
IXFK55N50
IXFK50N50
O-264
OT-227
IXFK55N50
IXFN55N50
BffW80N50
IXFN40N50
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