IXFH20N100P Search Results

IXFH20N100P Price and Stock

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Littelfuse Inc IXFH20N100P MOSFET N-CH 1000V 20A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFH20N100P	Tube	277		1	1 $8.95 10 $8.95 100 $7.53767 1000 $7.53767 10000 $7.53767	Buy Now
Newark	IXFH20N100P	Bulk			300	1 - 10 - 100 - 1000 $7.9 10000 $7.9	Buy Now
RS	IXFH20N100P	Bulk		8 Weeks	30	1 - 10 - 100 $11.66 1000 $11.66 10000 $11.66	Get Quote
IXYS Corporation IXFH20N100P MOSFETs 20 Amps 1000V 1 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFH20N100P		137			1 $8.95 10 $8.95 100 $7.53 1000 $7.53 10000 $7.53	Buy Now
Future Electronics	IXFH20N100P	Tube		26 Weeks	300	1 - 10 - 100 $8.83 1000 $8.83 10000 $8.83	Buy Now
TTI	IXFH20N100P	Tube			300	1 - 10 - 100 - 1000 $7.63 10000 $7.63	Buy Now
TME	IXFH20N100P				1	1 $13 10 $10.27 100 $9.22 1000 $9.22 10000 $9.22	Get Quote
New Advantage Corporation	IXFH20N100P		289		1	1 - 10 - 100 $18.66 1000 $17.41 10000 $17.41	Buy Now

IXFH20N100P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFH20N100P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 20A TO-247		Original	PDF

IXFH20N100P Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFH20N100P IXFT20N100P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1000V 20A Ω 570mΩ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR	Original	IXFH20N100P IXFT20N100P 300ns O-247 20N100P 04-01-08-B	PDF
Untitled Abstract: No abstract text available Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH20N100P IXFT20N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000	Original	IXFH20N100P IXFT20N100P 300ns O-247 20N100P 3-07-A	PDF
IXFH20N100 Abstract: IXFH20N100P 20n10 20N100P IXFT20N100P N CHANNEL MOSFET 10A 1000V F20N Text: PolarTM Power MOSFET HiPerFETTM IXFH20N100P IXFT20N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1000V 20A Ω 570mΩ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR	Original	IXFH20N100P IXFT20N100P 300ns O-247 20N100P 04-01-08-B IXFH20N100 IXFH20N100P 20n10 20N100P IXFT20N100P N CHANNEL MOSFET 10A 1000V F20N	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original		PDF
IXGP70N33 Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim	Original	D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250	PDF