IXFH12N100P Search Results

IXFH12N100P Price and Stock

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Littelfuse Inc IXFH12N100P MOSFET N-CH 1000V 12A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFH12N100P	Tube	570		1	1 $10.3 10 $10.3 100 $6.10867 1000 $4.78312 10000 $4.78312	Buy Now
Verical	IXFH12N100P		1,140		30	1 - 10 - 100 $5.652 1000 $4.671 10000 $4.671	Buy Now
Arrow Electronics	IXFH12N100P		1,166	46 Weeks	30	1 - 10 - 100 $5.652 1000 $4.671 10000 $4.671	Buy Now
RS	IXFH12N100P	Bulk		8 Weeks	30	1 - 10 - 100 $7.4 1000 $7.4 10000 $7.4	Get Quote
IXYS Corporation IXFH12N100P MOSFETs 12 Amps 1000V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFH12N100P		668			1 $8.86 10 $7.14 100 $6.46 1000 $5.14 10000 $4.92	Buy Now
Newark	IXFH12N100P	Bulk	402		1	1 $6.66 10 $6.66 100 $6.66 1000 $6.66 10000 $6.66	Buy Now
Future Electronics	IXFH12N100P	Tube		46 Weeks	300	1 - 10 - 100 $5.08 1000 $4.75 10000 $4.75	Buy Now
TTI	IXFH12N100P	Tube	300		30	1 - 10 - 100 $4.84 1000 $4.84 10000 $4.84	Buy Now
TME	IXFH12N100P		298		1	1 $8.96 10 $7.12 100 $6.4 1000 $6.4 10000 $6.4	Buy Now
IXYS Integrated Circuits Division IXFH12N100P MOSFET DIS.12A 1000V N-CH TO247-3 HIPERFET THT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXFH12N100P					1 $9.11933 10 $9.11933 100 $8.2903 1000 $8.2903 10000 $8.2903	Get Quote

IXFH12N100P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFH12N100P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 12A TO-247		Original	PDF

IXFH12N100P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: PolarTM HiPerFETTM Power MOSFETs VDSS ID25 IXFH12N100P IXFV12N100P IXFV12N100PS RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ 1000V 12A Ω 1.05Ω 300ns PLUS220 (IXFV) G Symbol Test Conditions Maximum Ratings VDSS	Original	PDF	IXFH12N100P IXFV12N100P IXFV12N100PS 300ns PLUS220 12N100P 1-08-A
IXFH12N100P Abstract: 12n100p f12n10 Text: PolarTM HiPerFETTM Power MOSFETs IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000	Original	PDF	IXFH12N100P IXFV12N100P IXFV12N100PS 300ns PLUS220 PLUS220SMD O-247 12N100P 1-08-A f12n10
f12n10 Abstract: 12n100p f12n Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 12A Ω 1.05Ω 300ns PLUS220 (IXFV) G Symbol Test Conditions	Original	PDF	IXFH12N100P IXFV12N100P IXFV12N100PS 300ns PLUS220 PLUS220SMD 12N100P f12n10 f12n
f12n10 Abstract: 12n100p PLUS220SMD IXFH12N100P IXFV12N100PS diode 6A 1000v Text: PolarTM Power MOSFET HiPerFETTM IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 12A Ω 1.05Ω 300ns PLUS220 (IXFV) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	IXFH12N100P IXFV12N100P IXFV12N100PS 300ns PLUS220 150GS 12N100P 1-08-A f12n10 PLUS220SMD IXFH12N100P IXFV12N100PS diode 6A 1000v