IXBJ 40N160 Search Results

IXBJ 40N160 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXBJ 40N160		IXYS	TRANS IGBT CHIP N-CH 1600V 33A 3TO-268		Original	PDF
IXBJ40N160		IXYS	High Voltage BimosFET Monolithic Bipolar MOS Transistor: 1600v 33a		Original	PDF

IXBJ 40N160 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BiMOSFET Abstract: 40N160 Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBJ 40N140 IXBJ 40N160 VCES IC25 VCE sat tfi N-Channel, Enhancement Mode C G C E E Symbol Conditions Maximum Ratings 40N140 40N160 VCES TJ = 25°C to 150°C 1400 1600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	PDF	40N140 40N160 O-268 40N160 O-268 IXBH40N160 BiMOSFET
40N140 Abstract: 40N160 Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBJ 40N140 IXBJ 40N160 VCES IC25 VCE sat tfi = = = = 1400/1600 V 33 A 7.1 V 40 ns N-Channel, Enhancement Mode C G E Symbol Test Conditions Maximum Ratings 40N140 40N160 TO-268 VCES TJ = 25°C to 150°C	Original	PDF	40N140 40N160 O-268 IXBH40 40N140 40N160
IXBH 40N160 Abstract: IXBJ 40N160 40N140 40N160 Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBJ 40N140 IXBJ 40N160 VCES IC25 VCE sat tfi = = = = 1400/1600 V 33 A 7.1 V 40 ns N-Channel, Enhancement Mode C G E Symbol Test Conditions Maximum Ratings 40N140 40N160 TO-268 VCES TJ = 25°C to 150°C	Original	PDF	40N140 40N160 O-268 IXBH40 IXBH 40N160 IXBJ 40N160 40N140 40N160
40N160 Abstract: 16N170 Text: BIMOSFET TM B-Series Contents VCES max. TO-247 TO-268 TO-268 long leg ISOPLUS i4-PACTM Page IXBF 9N140 C4-2 V IC25 TVJ = 25 °C A Vce(sat) TVJ = 25 °C V 1400 7 4.9 9 4.9 IXBH 9N140 C4-6 15 5.8 IXBH 15N140 C4-10 20 4.7 IXBH 20N140 C4-14 28 6.2 33 6.2 33	Original	PDF	16N170A 16N170 42N170 40N160 9N160 15N140
40N160 Abstract: 6c-5 40N140 BiMOSFET Text: □ IX Y S High Voltage BIMOSFET Monolithic Bipolar MOS Transistor IXBJ 40N140 IXBJ 40N160 VCES = 1400/1600 V N-Channel, Enhancement Mode S ym bol T e s t C o n d itio n s M axim u m R a tin g s 40N 140 40N 160 V CES T j = 25°C to 150°C 1400 1600 V V CGR	OCR Scan	PDF	40N140 40N160 40N140 40N160 6c-5 BiMOSFET