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    IXBF40 Price and Stock

    IXYS Corporation IXBF40N160

    IGBT 1600V 28A ISOPLUSI4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBF40N160 Tube 25
    • 1 -
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    • 100 $22.8076
    • 1000 $22.8076
    • 10000 $22.8076
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    Mouser Electronics IXBF40N160
    • 1 $27.51
    • 10 $24.45
    • 100 $19.55
    • 1000 $19.55
    • 10000 $19.55
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    TME IXBF40N160 1
    • 1 $24.12
    • 10 $20.12
    • 100 $19.59
    • 1000 $19.59
    • 10000 $19.59
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    Littelfuse Inc IXBF40N160

    Disc Igbt Bimosfet-High Volt I4-Pac/Tube |Littelfuse IXBF40N160
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXBF40N160 Bulk 25
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    IXYS Integrated Circuits Division IXBF40N160

    IGBT DIS.SINGLE 16A 1600V BIMOSFET ISOPLUS i4-PAC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXBF40N160
    • 1 $56.49975
    • 10 $56.49975
    • 100 $52.8035
    • 1000 $52.8035
    • 10000 $52.8035
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    IXBF40 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXBF 40N140 IXYS TRANS IGBT CHIP N-CH 1400V 28A 3ISOPLUS I4-PAC Original PDF
    IXBF40N140 IXYS Discrete IGBTs Original PDF
    IXBF 40N160 IXYS TRANS IGBT CHIP N-CH 1600V 28A 3ISOPLUS I4-PAC Original PDF
    IXBF40N160 IXYS Discrete IGBTs Original PDF

    IXBF40 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXAN0026

    Abstract: 1kw single phase IGBT inverter IC Module 1000V igbt dc to dc buck converter IEC61000-3-4 MOSFET Based Chopper 600V igbt dc to dc buck converter chopper control igbt buck design of boost chopper circuit 600V igbt dc to dc boost converter 1kw single phase IGBT inverter CIRCUIT
    Text: IXAN0026 Combining the Features of Modules and Discretes in a New Power Semiconductor Package Andreas Lindemann IXYS Semiconductor GmbH, Postfach 1180, D { 68619 Lampertheim http://www.IXYS.com Abstract 1 Packaging Technology A new package for power semiconductors has


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    IXAN0026 IEC61000-3-2: IEC61000-3-4: UC3853 IXAN0026 1kw single phase IGBT inverter IC Module 1000V igbt dc to dc buck converter IEC61000-3-4 MOSFET Based Chopper 600V igbt dc to dc buck converter chopper control igbt buck design of boost chopper circuit 600V igbt dc to dc boost converter 1kw single phase IGBT inverter CIRCUIT PDF

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


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    ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET PDF

    40N160

    Abstract: 40N140
    Text: Advanced Technical Information IXBF 40N140 IC25 IXBF 40N160 VCES High Voltage BIMOSFETTM VCE sat tf in High Voltage ISOPLUS i4-PACTM = = = = 28 A 1400/1600 V 6.2 V 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C


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    40N140 40N160 40N140 40N160 IXBF40 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXBF 40N160 IC25 VCES VCE sat tf High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM = 28 A = 1600 V = 6.2 V = 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C


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    40N160 IXBF40 PDF

    IXAN0013

    Abstract: 0013 mosfet d408 REGULATOR IC 7815 ic 7815 pin diagram IC 7815 7915 IXEL40N400 transistor 7815 15-0-15 transformer schematic diagram welding inverter
    Text: APPLICATION NOTE: IXAN0013 CAPACITOR CHARGE/DISCHARGE CIRCUITS, UTILIZING HIGH VOLTAGE IGBTS AND ZCS RESONANT MODE TECHNIQUES By:ABHIJIT D.PATHAK There are many applications which require pulse power. The needed burst of energy is derived by rapidly discharging a previously charged


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    IXAN0013 25VDC 35VDC 110VAC IXDD408 IXDD414 IXLF19N250A 15VDC D-68623; IXAN0013 0013 mosfet d408 REGULATOR IC 7815 ic 7815 pin diagram IC 7815 7915 IXEL40N400 transistor 7815 15-0-15 transformer schematic diagram welding inverter PDF

    40N160

    Abstract: 40N140
    Text: IXBF 40N160 IC25 VCES VCE sat tf High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM = 28 A = 1600 V = 6.2 V = 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C


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    40N160 vol600 IXBF40 40N160 40N140 PDF

    40N160

    Abstract: IXBF 40N140 IXBF 40N160 40N140
    Text: Advanced Technical Information IXBF 40N140 IC25 IXBF 40N160 VCES High Voltage BIMOSFETTM VCE sat tf in High Voltage ISOPLUS i4-PACTM = 28 A = 1400/1600 V = 6.2 V = 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C


    Original
    40N140 40N160 40N140 40N160 IXBF40 IXBF 40N140 IXBF 40N160 PDF

    mosfet d408

    Abstract: schematic diagram welding inverter VUO 36-16N08 7815 CT 7815 regulator resonant half bridge schematic zcs h-bridge zcs 7815 15Vdc regulator 7915 regulator pin configuration igbt gate driver circuit schematic hcpl-3120
    Text: APPLICATION NOTE: IXAN0013 CAPACITOR CHARGE/DISCHARGE CIRCUITS, UTILIZING HIGH VOLTAGE IGBTS AND ZCS RESONANT MODE TECHNIQUES By:ABHIJIT D.PATHAK There are many applications which require pulse power. The needed burst of energy is derived by rapidly discharging a previously charged


    Original
    IXAN0013 25VDC 35VDC 110VAC IXDD408 IXDD414 IXLF19N250A 15VDC D-68623; mosfet d408 schematic diagram welding inverter VUO 36-16N08 7815 CT 7815 regulator resonant half bridge schematic zcs h-bridge zcs 7815 15Vdc regulator 7915 regulator pin configuration igbt gate driver circuit schematic hcpl-3120 PDF

    BERULUB FR 16

    Abstract: ixys vuo 52-16 ups PURE SINE WAVE schematic diagram Vienna Rectifier TL 82036 BERULUB FR 43 UC3858 schema inverter welding veridul BERULUB FR 16 B
    Text: Application Notes & Technical Information Volume 2 Volume 1 Contents Title Page Standard IGBT "G" Series M1 - 2 What is a HiPerFET Power Mosfet? M1 - 3 New 1600 V BIMOSFET Transistors Open up New Appl. M1 - 5 Comparative Performance of BIMOSFET in FLY Back Converter Circuits


    Original
    ISOPLUS247 UC3854A UC3854B DN-44, TDA4817 BERULUB FR 16 ixys vuo 52-16 ups PURE SINE WAVE schematic diagram Vienna Rectifier TL 82036 BERULUB FR 43 UC3858 schema inverter welding veridul BERULUB FR 16 B PDF