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    IW4011BN Search Results

    IW4011BN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IW4011BN Integral Quad 2-input NAND gate, high-voltage silicon-gate CMOS Original PDF

    IW4011BN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    40111

    Abstract: IW4011B IW4011BD IW4011BN
    Text: TECHNICAL DATA IW4011B Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS The IW4011B NAND gates provide the system designer with direct implementation of the NAND function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 A at 18 V over full packagetemperature range; 100 nA at 18 V and 25°C


    Original     		PDF IW4011B IW4011B IW4011BN IW4011BD 40111

    IL311ANM

    Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D
    Text: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.


    Original     		PDF

    IW4011BN

    Abstract: 4 nand dip 16 supply voltage 30 v IW4011B IW4011BD
    Text: TECHNICAL DATA IW4011B Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS The IW4011B NAND gates provide the system designer with direct emplementation of the NAND function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 µA at 18 V over full packagetemperature range; 100 nA at 18 V and 25°C


    Original     		PDF IW4011B IW4011B IW4011BN IW4011BD 4 nand dip 16 supply voltage 30 v