sealectro
Abstract: umbilical connector missile Cannon connectors aircraft audio plug foot step generation of electricity cannon plug standard pin electrical house wiring SMA rf pogo pin ITT Cannon SMB Connectors mcdonnell douglas connector
Text: Interconnect Solutions History Cannon, VEAM & BIW www.ittcannon.com Cannon, VEAM, BIW A Historical Achievment of Technology Leadership Defining and Championing Innovation Showcasing a portfolio of creativity, ITT’s “Engineered For Life” execution embraces
|
Original
|
PDF
|
Wor0050
sealectro
umbilical connector missile
Cannon connectors
aircraft audio plug
foot step generation of electricity
cannon plug standard pin
electrical house wiring
SMA rf pogo pin
ITT Cannon SMB Connectors
mcdonnell douglas connector
|
N82S123F
Abstract: N82S123N N82S23F 82S123 programming N82S23N 82S123 SIGNETICS prom signetics 82S123 n82s123 82S23
Text: Signetics Mem ories - Bipolar Prom s Programming Signetics P R O M S CONNECTION DIAGRAM PROM programming is available through ITT Gemini for further details please contact your local sales office. N82S23/N82S123 PROM 256 Bit Bipolar GENERAL DESCRIPTION The 82S23 and 82S123 are field programmable, which
|
OCR Scan
|
PDF
|
N82S23/N82S123
82S23
82S123
N82S123F
N82S123N
N82S23F
82S123 programming
N82S23N
SIGNETICS prom
signetics 82S123
n82s123
|
N74S301
Abstract: Signetics decoder ITT gemini
Text: Signetics Memories - Bipolar Ram N74S200/201, N74S301 - 256 Bit TTL Ram Cont. B LO C K D IA G R A M WRITE AMPLIFIER* D ATA INRUT B U FFE R 13 E 3 -r» » ( 2) £* t<¡3 isfi AD DRESS B U FFE R 1:1« (X) DECO DER <u> 1 1 16 X 16 M ATR IX 1 1 (12) W I 16
|
OCR Scan
|
PDF
|
N74S200/201,
N74S301
Signetics decoder
ITT gemini
|
I2102A
Abstract: 2102AN 1024x1 static ram 2102A-1 53A8 2102AL I2102 MOS-RAM Signetics 2102A memory
Text: S ig n e tics Memories M O S - R A M S 2102A—1024 Bit Static MOS RAM 1024x 1 CONNECTION DIAGRAM GENERAL DESCRIPTION The 2102A is a high speed static random access memory element using n-channel MOS devices integrated on a m onolithic array. It uses fu lly dc stable (static) circuitry
|
OCR Scan
|
PDF
|
1024x1)
I2102AL)
I2102A
2102AN
1024x1 static ram
2102A-1
53A8
2102AL
I2102
MOS-RAM
Signetics
2102A memory
|
2533N
Abstract: Gemini 2 2533-N Signetics 2533
Text: S ig n e tic s Memories - Shift Register 2533 - 1024-Bit Static Shift Register CONNECTION D1AGFIAM GENERAL DESCRIPTION The 2533 static shift register consists of enhancement mode p-channel silicon gate MOS devices integrated on a single m onolithic chip. The 1024-bit register is equipped w ith 2 data inputs
|
OCR Scan
|
PDF
|
1024-Bit
2533N
Gemini 2
2533-N
Signetics 2533
|
N10149F
Abstract: N10149 ecl 10K signetics 10149
Text: S ig n e tic s Memories - Bipolar Proms N10149—1024 Bit Field Programmable Prom. CONNECTION DIAGRAM vcci r 1 GENERAL DESCRIPTION The 10149 is field programmable, meaning thcit custom patterns are immediately available by follow ing the fusing procedure given in this data sheet. The standard device is
|
OCR Scan
|
PDF
|
N10149-1024
500ii
50kii
N10149F
N10149
ecl 10K signetics
10149
|
2527N
Abstract: 2528N 2529N 2529 250-Bit
Text: Signetics M em ories - S h ift Register 2527 Dual 240-Bit Static Shift Register 240 x 2 2528 Dual 250-Bit Static Shift Register (250 x 2) 2529 Dual 256-Bit Static Shift Register (256 x 2) C O N N E C TIO N D IA G R A M G E N E R A L D E SC RIPTIO N The 2527 2 4 0 -b it, 2528 250 -bit, and the 252 9 2 5 6 -b it
|
OCR Scan
|
PDF
|
240-Bit
250-Bit
256-Bit
240-bit,
250-bit.
2527N
2528N
2529N
2529
|
SIGNETICS 268
Abstract: Signetics ITT gemini 24 SIGNETICS N82S25 N3101 N74S189 N74S89 ifr 540 gemini
Text: Signetics Memories - Bipolar Ram N82S25, N3101 A , N74S89 and N 74S189 Series Bipolar Scratch Pad Mem ory 1 6 x 4 Continued 64 Bit BLOCK D I A G R A M G N D = (8 ) ( ) * DAT* IN *N D o u t P in n u m b e r PLEA SE Q U O TE STOCK NO. A N D M A N U F A C T U R E R S P A R T NO. WHEN O R DERIN G
|
OCR Scan
|
PDF
|
N82S25,
N3101
N74S89
N74S189
SIGNETICS 268
Signetics
ITT gemini
24 SIGNETICS
N82S25
ifr 540
gemini
|
MA747C
Abstract: 55969R A747CN JUA747CK MA747 MA747K
Text: S ig n e tic s Integrated Circuits - Operational Amplifiers jliA 747 Series — Dual Operational Amplifier CONNECTION DIAGRAM GENERAL DESCRIPTION The 747 is a pair of high performance m onolithic operational amplifiers constructed on a single silicon chip.
|
OCR Scan
|
PDF
|
jiA747
juA741
MA747C
55969R
A747CN
JUA747CK
MA747
MA747K
|
signetics 2606
Abstract: "Pin compatible" Signetics
Text: Signetics Memories-IVÌOS RAMS 2606—1024 Bit Read/Write Static MOS RAM 256 x 4 C O N N E C T IO N D IA G R A M G E N E R A L D E SC R IPTIO N The 2606 is fabricated w ith n-channel silic o n gate MOS technology and achieves an access tim e o f less than
|
OCR Scan
|
PDF
|
750ns.
I/04U
signetics 2606
"Pin compatible" Signetics
|
signetics sd200
Abstract: SIGNETICS SD201 041 itt diode SD201 Scans-0010592 SD200 SD202 SD203
Text: S ig n e tic s Field Effect Transistors-D-MOS C O N N E C T IO N D IG R A M SD 200 - Series D-MOS G E N E R A L D E S C R IP TIO N D ouble -diffused silicon fie ld -e ffe c t transistors w ith insulated gates, in ten ded fo r u.h .f. and genera purpose r.f.
|
OCR Scan
|
PDF
|
SD201
SD203
SD200
SD202
SD203
signetics sd200
SIGNETICS SD201
041 itt diode
Scans-0010592
SD200
|
NE521
Abstract: NE521N "dual differential comparator" Ne521 signetics
Text: Signetics Integrated Circuits - Comparators NE521 Series — High Speed Dual Differential Comparator/Sense Am p C O N N E C T IO N D I A G R A M F,N P A C K A G E FEATURES • 12ns m axim um guaranteed propagation d elay • 20mA maximum input bias current
|
OCR Scan
|
PDF
|
NE521
NE521N
"dual differential comparator"
Ne521 signetics
|
82S25
Abstract: N82S25N 74S189 N82S25 N3101 N3101A N74S189 N74S89 N82S25F
Text: Signetics M em ories - Bipolar Ram N82S25, N3101 A, N74S89 and N74S189 Series — 64 Bit Bipolar Scratch Pad Memory 16 x 4 CONNECTION DIAGRAM GENERAL DESCRIPTION This fam ily of Read/Write Random Access Memories is ideal for use in scratch pad and high-speed buffer memory
|
OCR Scan
|
PDF
|
N82S25,
N3101
N74S89
N74S189
82S25
N82S25N
74S189
N82S25
N3101A
N82S25F
|
041 itt diode
Abstract: 5d214 5d211 SD211 S02V0 SD213 sd215 signetics l4401 5d213 s0211
Text: S ig n e tic s Field Effect Transistors-D-M OS C O N N E C T IO N D IA G R A M SD 210 -Series G E N E R A L D E SC R IPTIO N Double-di-ffused silico n fie ld -e ffe c t transistors w ith insulated gates, p rim a rily intended fo r analogue/digital sw itch and sw itc h d river app lica tions. The y featu re lo w
|
OCR Scan
|
PDF
|
SD211,
SD213
SD215
S02V0
SD211
SD212
SD214
SD215
56061D
041 itt diode
5d214
5d211
sd215 signetics
l4401
5d213
s0211
|
|
|
RAM 2102
Abstract: 2102-2 RAM 2102 Static RAM tle 4201 1024x1 static ram 2102N 56369 "Pin compatible" Signetics 1024X1
Text: S ìg n e tìc s Memories M O S R A M C O N N E C T IO N D IA G R A M 2102-1024 Bit Read/Write Static MOS RAM 1024x1 ID A7 3a Ag » .E G E N E R A L D E S C R IP T IO N T h e 210 2 , 2102-1 and 2 1 0 2 -2 are static random access read/write mem ories fabricated with low threshold nchannel silicon gate technology.
|
OCR Scan
|
PDF
|
1024x1)
RAM 2102
2102-2 RAM
2102 Static RAM
tle 4201
1024x1 static ram
2102N
56369
"Pin compatible" Signetics
1024X1
|
N3001N
Abstract: 74S182 N3001
Text: S ig n e tic s Microprocessors N3001 - Microprogram Control Unit connection diagram G E N E R A L D E SC R IPTIO N The N300? MCU is o n e e le m e n t o f a b ip o la r m ic rocom puter set. W hen used w ith th e 3002, 74S18 2 , ROM o r PR O M , a pow e rfu l m ic ro
|
OCR Scan
|
PDF
|
N3001
N3001
74S182,
N3001N
74S182
|
TDA2640
Abstract: vg16 Gemini 2 ITT gemini Signetics NE
Text: Signetics Integrated Circuits - General TDA2640 Switched Mode Power Supplies Integrated Circuits GENERAL DESCRIPTION The TD A2640 is a m onolithic integrated circuit fo r con trolling single ended switched-mode power supplies. It incorporates the following functions: —
|
OCR Scan
|
PDF
|
TDA2640
vg16
Gemini 2
ITT gemini
Signetics NE
|
signetics ne540
Abstract: NE540 NE540L SE540 Signetics SE540
Text: S ig n e tic s Integrated C ircu its-A u dio Circuits C O N N E C TIO N D IA G R A M NE540 Power Driver G E N E R A L DE SC R IPTIO N The N E /S E 540 is a m o n o lith ic , class A 8 pow er a m p lifie r designed specifically to drive a pair o f com plem entary
|
OCR Scan
|
PDF
|
NE540
NE/SE540
SE540
NE540
signetics ne540
NE540L
Signetics SE540
|
82S2708
Abstract: N82S2708F N82S2708 S82S2708
Text: S ig n e tic s Memories - Bipolar Proms- N82S2708 - 8192 Bit Field Programmable Bipolar Prom CONNECTION DIAGRAM GENERAL DESCRIPTION The 82S2708 is field programmable, which means that custom patterns are immediately available by follow ing the fusing procedure given in this data sheet. The standard
|
OCR Scan
|
PDF
|
N82S2708
82S2708
N82S2708F
S82S2708
|
TCA240
Abstract: transistor ITT TBA673 DOUBLE BALANCED MODULATOR AM modulator and demodulator circuit "balanced modulator demodulator" modulator VCR 63918H
Text: S ignetics Integrated Circuits - General C O N N E C T IO N D IA G R A M TCA240 — Double Balanced Modulator/ Demodulator G E N E R A L DE SC R IPTIO N The T C A 240 is a m onolithic integrated circui t used for general applications, such as: — — —
|
OCR Scan
|
PDF
|
TCA240
63918H
TBA673
transistor ITT
DOUBLE BALANCED MODULATOR
AM modulator and demodulator circuit
"balanced modulator demodulator"
modulator VCR
|
EA4900
Abstract: EA4600 til 071 Signetics TTL 2600 signetics
Text: S ig n e tic s M e m o rie s-M O S R O M 260016384-Bit Static MOS ROM 2048 x 8 C O N N E C TIO N D IA G R A M GNO Q T G E N E R A L DE SC R IPTIO N The 2600 o utputs appear and remain in a steady state c o n d itio n u n til a new address is read. The 16,384 bits are
|
OCR Scan
|
PDF
|
16384-Bit
300/550ns
EA4900
EA4600
til 071
Signetics TTL
2600 signetics
|
"Pin compatible" Signetics
Abstract: MOS-RAM
Text: S ig n e tic s Memories—MOS-RAMS 2101-1024 Bit Static MOS—RAM 256 x 4 C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N T h e 2101 series is high performance, low pow er static read/write R A M 's . T h e 2101 series is fabricated with n-channel silicon gate
|
OCR Scan
|
PDF
|
|
AM9216
Abstract: IM7780 AM2111 IM7552 9316A AM9208 signetics 2524 2102 ram fairchild AM9060 Signetics 2518
Text: S ig n e tic s M em ories M O S RAMs AMD A M 2 1 01/9101 A M 2 1 11/9111 A M 2 1 12/9112 A M 2 1 02/ 9 10 2 AM 9060 AM 9216 AM 9208 AM 1402 A M 1403 A M 140 4 AM 1405 A M 150 6 A M 1507 A M 2806 AM 2807 AM 2808 AM 2809 AM 2833 M O S M EM O R Y C RO SS R E FE R E N C E
|
OCR Scan
|
PDF
|
AM2101/9101
AM2111/9111
AM2112/9112
AM2102/9102
AM9060
AM9216
AM9208
AM1402
AM2807
AM2808
AM9216
IM7780
AM2111
IM7552
9316A
AM9208
signetics 2524
2102 ram fairchild
Signetics 2518
|
78MG
Abstract: 79MG MA79MG ma78mg transistor ITT ifr 157
Text: S ig n e tic s Integrated Circuits - Voltage Regulators m A 79MG Series — 4 Terminal Adjustable Voltage Regulators C O N N E C TIO N D IA G R A M G E N E R A L D E SC RIPTIO N The /¿A79MG are 4-Term inal A d justa ble Voltage Regulators are designed to deliver continuo us load currents; o f up to
|
OCR Scan
|
PDF
|
mA79MG
500mA
78MG
79MG
ma78mg
transistor ITT
ifr 157
|