DI810
Abstract: No abstract text available
Text: M ITEL ITS06F03 Medium Frequency Powerline N-Channel IGBT SEMICONDUCTOR Supersedes April 1998 version, DS4866-1.3 DS4866-2.1 February 1999 The ITS06F03 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of low to medium
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DS4866-1
ITS06F03
DS4866-2
ITS06F03
DI810
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T0252
Abstract: ITS06F03B ITS06F03G
Text: M ITEL S E M IC O N D U C T O R ITS06F03 Medium Frequency Powerline N-Channel IGBT Supersedes April 1998 version, DS4866-1.3 DS4866-2.1 February 1999 Key Parameters The ITS06F03 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for
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ITS06F03
DS4866-1
DS4866-2
ITS06F03
T0220
T0252
T0252
ITS06F03B
ITS06F03G
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