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    ITS06F03 Search Results

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    DI810

    Abstract: No abstract text available
    Text: M ITEL ITS06F03 Medium Frequency Powerline N-Channel IGBT SEMICONDUCTOR Supersedes April 1998 version, DS4866-1.3 DS4866-2.1 February 1999 The ITS06F03 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of low to medium


    OCR Scan     		PDF DS4866-1 ITS06F03 DS4866-2 ITS06F03 DI810

    T0252

    Abstract: ITS06F03B ITS06F03G
    Text: M ITEL S E M IC O N D U C T O R ITS06F03 Medium Frequency Powerline N-Channel IGBT Supersedes April 1998 version, DS4866-1.3 DS4866-2.1 February 1999 Key Parameters The ITS06F03 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for


    OCR Scan     		PDF ITS06F03 DS4866-1 DS4866-2 ITS06F03 T0220 T0252 T0252 ITS06F03B ITS06F03G