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    mch3376

    Abstract: No abstract text available
    Text: MCH3376 Ordering number : ENA1564 SANYO Semiconductors DATA SHEET MCH3376 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • Low ON-resistance. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage


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    MCH3376 ENA1564 900mm2 PW10s, A1564-4/4 mch3376 PDF

    a1460

    Abstract: SCH1330
    Text: SCH1330 Ordering number : ENA1460A SANYO Semiconductors DATA SHEET SCH1330 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Halogen free compliance. Specifications


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    SCH1330 ENA1460A PW10s, A1460-4/4 a1460 SCH1330 PDF

    A1460

    Abstract: SCH1330
    Text: SCH1330 注文コード No. N A 1 4 6 0 A 三洋半導体データシート 半導体データシート No.NA1460 をさしかえてください。 SCH1330 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス


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    SCH1330 NA1460 900mm2 750mA 750mA, 300mA, 100mA, --10V IT14620 A1460 SCH1330 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1460B SCH1330 P-Channel Power MOSFET http://onsemi.com –20V, –1.5A, 241mΩ, Single SCH6 Features • • • • • Low ON-resistance Ultrahigh-speed switching 1.8V drive Halogen free compliance Protection diode in Specifications


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    ENA1460B SCH1330 PW10s, 900mm2 A1460-7/7 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCH5839 Ordering number : ENA2165 SANYO Semiconductors DATA SHEET MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5839 General-Purpose Switching Device Applications Features • • • • Composite type with an P-channel silicon MOSFET and a schottky barrier diode


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    MCH5839 ENA2165 A2165-7/7 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCH6660 Ordering number : ENA1993A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFET MCH6660 General-Purpose Switching Device Applications Features • • • • ON-resistance Nch : RDS on 1=105mΩ(typ.) Pch : RDS(on)1=205mΩ(typ.) 1.8V drive


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    MCH6660 ENA1993A A1993-9/9 PDF

    MCH6660-TL-H

    Abstract: No abstract text available
    Text: MCH6660 Ordering number : ENA1993A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFET MCH6660 General-Purpose Switching Device Applications Features • • • • ON-resistance Nch : RDS on 1=105mΩ(typ.) Pch : RDS(on)1=205mΩ(typ.) 1.8V drive


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    ENA1993A MCH6660 PW10s, 900mm2 A1993-9/9 MCH6660-TL-H PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1564B MCH3376 Power MOSFET –20V, 241mΩ, –1.5A, Single P-Channel http://onsemi.com Features • ESD diode-Protected gate • High speed switching and Low loss • Pb-free and RoHS Compliance • • Drive at low voltage:1.8V drive


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    ENA1564B MCH3376 900mm2Ã A1564-5/5 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1993A MCH6660 Power MOSFET http://onsemi.com 20V, 2A, 136mΩ, –20V, –1.5A, 266mΩ, Complementary Dual MCPH6 Features • • • • ON-resistance Nch : RDS on 1=105mΩ(typ.) Pch : RDS(on)1=205mΩ(typ.) 1.8V drive Halogen free compliance


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    ENA1993A MCH6660 PW10s, 900mm2 A1993-9/9 PDF

    ENA2166

    Abstract: No abstract text available
    Text: Ordering number : ENA2166 CPH6635 Power MOSFET http://onsemi.com 30V, 0.4A, 3.7Ω, –20V, –1.5A, 280mΩ, Complementary Dual CPH6 Features • • • • Excellent ON-resistance characteristic P-Channel : RDS(on 1=215mΩ (typ.) Optimal for load switch use (N-Channel for drive is embedded)


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    ENA2166 CPH6635 PW10s, 900mm2 150ere A2166-8/8 ENA2166 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2165 MCH5839 P-Channel Power MOSFET http://onsemi.com –20V, –1.5A, 266mΩ, Single MCPH5 with Schottky Diode Features • • • • Composite type with an P-channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting


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    ENA2165 MCH5839 PW10s, A2165-7/7 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCH3376 Ordering number : ENA1564A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH3376 General-Purpose Switching Device Applications Features • • • Low ON-resistance 1.8V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C


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    MCH3376 ENA1564A 900mm2Ã A1564-7/7 PDF

    A1460

    Abstract: SCH1330 ENA1460
    Text: SCH1330 Ordering number : ENA1460 SANYO Semiconductors DATA SHEET SCH1330 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Halogen free compliance. Specifications


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    SCH1330 ENA1460 PW10s, A1460-4/4 A1460 SCH1330 ENA1460 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2166 CPH6635 Power MOSFET http://onsemi.com 30V, 0.4A, 3.7Ω, –20V, –1.5A, 280mΩ, Complementary Dual CPH6 Features • • • • Excellent ON-resistance characteristic P-Channel : RDS(on 1=215mΩ (typ.) Optimal for load switch use (N-Channel for drive is embedded)


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    ENA2166 CPH6635 A2166-8/8 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCH3376 Ordering number : ENA1564A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH3376 General-Purpose Switching Device Applications Features • • • Low ON-resistance 1.8V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C


    Original
    MCH3376 ENA1564A 900mm2Ã A1564-7/7 PDF

    Untitled

    Abstract: No abstract text available
    Text: SCH1330 Ordering number : ENA1460B SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET SCH1330 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance Ultrahigh-speed switching 1.8V drive Halogen free compliance Protection diode in


    Original
    SCH1330 ENA1460B 900mm2Ã A1460-7/7 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCH6660 Ordering number : ENA1993 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs MCH6660 General-Purpose Switching Device Applications Features • • • ON-resistance Nch : RDS on 1=105mΩ(typ.) Pch : RDS(on)1=205mΩ(typ.) 1.8V drive


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    ENA1993 MCH6660 PW10s, 900mm2 A1993-6/6 PDF

    Untitled

    Abstract: No abstract text available
    Text: SCH1330 Ordering number : ENA1460B SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET SCH1330 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance Ultrahigh-speed switching 1.8V drive Halogen free compliance Protection diode in


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    SCH1330 ENA1460B A1460-7/7 PDF

    a2165

    Abstract: No abstract text available
    Text: MCH5839 Ordering number : ENA2165 SANYO Semiconductors DATA SHEET MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5839 General-Purpose Switching Device Applications Features • • • • Composite type with an P-channel silicon MOSFET and a schottky barrier diode


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    ENA2165 MCH5839 A2165-7/7 a2165 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCH3376 Ordering number : ENA1564A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH3376 General-Purpose Switching Device Applications Features • • • Low ON-resistance 1.8V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C


    Original
    MCH3376 ENA1564A 900mm2Ã A1564-7/7 PDF

    Untitled

    Abstract: No abstract text available
    Text: SCH1330 Ordering number : ENA1460A SANYO Semiconductors DATA SHEET SCH1330 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Halogen free compliance. Specifications


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    SCH1330 ENA1460A 900mm2Ã A1460-4/4 PDF