2SC5793
Abstract: No abstract text available
Text: 2SC5793 Ordering number : EN7451A SANYO Semiconductors DATA SHEET 2SC5793 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1600V .
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2SC5793
EN7451A
2SC5793
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IC 74164
Abstract: ic 74163 IC 74161 2SC5932
Text: Ordering number : ENN7416 2SC5932 NPN Triple Diffused Planar Silicon Transistor 2SC5932 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • High speed. High breakdown voltage VCBO=1600V . High reliability(Adoption of HVP process).
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ENN7416
2SC5932
2048B
2SC5932]
IC 74164
ic 74163
IC 74161
2SC5932
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2SC5793
Abstract: N7451 74512
Text: 注文コード No. N 7 4 5 1 2SC5793 No. N7451 31504 新 NPN 三重拡散プレーナ形シリコントランジスタ 2SC5793 特長 超高精細度 CRT ディスプレイ 水平偏向出力用 ・高速度である。 ・高耐圧である （VCBO=1600V）
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2SC5793
N7451
IT03579
IT03580
IT03581
IT03582
2SC5793
N7451
74512
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ic 74163
Abstract: IC 74164 IC 74161 IC 7416 2SC5932 2SC593
Text: Ordering number : ENN7416 2SC5932 NPN Triple Diffused Planar Silicon Transistor 2SC5932 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • High speed. High breakdown voltage VCBO=1600V . High reliability(Adoption of HVP process).
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Original
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ENN7416
2SC5932
2048B
2SC5932]
ic 74163
IC 74164
IC 74161
IC 7416
2SC5932
2SC593
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PDF
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2SC5793
Abstract: US1080 74511
Text: Ordering number : ENN7451 2SC5793 NPN Triple Diffused Planar Silicon Transistor 2SC5793 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions High speed. High breakdown voltage VCBO=1600V . High reliability(Adoption of HVP process).
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Original
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ENN7451
2SC5793
2SC5793]
2SC5793
US1080
74511
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