Untitled
Abstract: No abstract text available
Text: MCH6612 Ordering number : EN7078A N-Channel Silicon MOSFET MCH6612 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
|
Original
|
MCH6612
EN7078A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number:ENN6535 N-Channel Silicon MOSFET 5HN02SP Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2180 [5HN02SP] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 3 1.3
|
Original
|
ENN6535
5HN02SP
5HN02SP]
|
PDF
|
TA-2939
Abstract: 5HN02N
Text: 注文コード No. N 6 5 3 4 5HN02N No. N 6 5 3 4 71000 新 5HN02N 特長 N チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃
|
Original
|
5HN02N
100mA
100mA,
IT00254
IT00258
IT00259
200mA
IT00260
TA-2939
5HN02N
|
PDF
|
MOSFET marking YF
Abstract: D1099 5HN02M
Text: 5HN02M Ordering number : EN6129A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 5HN02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C
|
Original
|
5HN02M
EN6129A
MOSFET marking YF
D1099
5HN02M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number:ENN6129 N-Channel Silicon MOSFET 5HN02M Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2158 0.3 0.2 0.425 [5HN02M] 0.15 3 0.425 2.1 1.250 0 to 0.1
|
Original
|
ENN6129
5HN02M
5HN02M]
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number:ENN6534 N-Channel Silicon MOSFET 5HN02N Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2178 [5HN02N] 5.0 4.0 5.0 4.0 0.6 2.0 0.45 0.5 0.44 14.0 0.45
|
Original
|
ENN6534
5HN02N
5HN02N]
|
PDF
|
TA-2701
Abstract: No abstract text available
Text: Ordering number:ENN6363 N-Channel Silicon MOSFET 5HN02C Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2091A [5HN02C] 0.5 0.4 3 0.16 0.95 0.95 2 1.9 2.9 2.5 1 : Gate
|
Original
|
ENN6363
5HN02C
5HN02C]
TA-2701
|
PDF
|
MCH6612
Abstract: No abstract text available
Text: Ordering number : ENN7078 MCH6612 N-Channel Silicon MOSFET MCH6612 Ultrahigh-Speed Switching Applications Preliminary • 0.25 2.1 • Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 4V drive. Composite type with 2 MOSFETs contained in a single
|
Original
|
ENN7078
MCH6612
MCH6612]
MCH6612
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 5HN02M Ordering number : EN6129A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 5HN02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C
|
Original
|
EN6129A
5HN02M
|
PDF
|
TA-2701
Abstract: 5HN02C
Text: 5HN02C Ordering number : EN6363A SANYO Semiconductors DATA SHEET 5HN02C N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C
|
Original
|
5HN02C
EN6363A
TA-2701
5HN02C
|
PDF
|
MCH6612
Abstract: No abstract text available
Text: MCH6612 注文コード No. N 7 0 7 8 B 三洋半導体データシート 半導体データシート No.N7078A をさしかえてください。 MCH6612 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス
|
Original
|
MCH6612
N7078A
900mm2
100mA
100mA,
IT00258
IT00260
900mm2
MCH6612
|
PDF
|
EN6129A
Abstract: No abstract text available
Text: 5HN02M Ordering number : EN6129A N-Channel Silicon MOSFET 5HN02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
|
Original
|
5HN02M
EN6129A
EN6129A
|
PDF
|
MCH6612
Abstract: No abstract text available
Text: MCH6612 Ordering number : EN7078B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6612 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
|
Original
|
MCH6612
EN7078B
PW10s,
MCH6612
|
PDF
|
5HN02M
Abstract: No abstract text available
Text: 注文コード No. N 6 1 2 9 5HN02M No. 6 1 2 9 62299 新 5HN02M 特長 N チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃
|
Original
|
5HN02M
100mA
100mA,
IT00258
IT00259
200mA
IT00260
IT00261
5HN02M
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: 5HN02C Ordering number : EN6363A 5HN02C N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
|
Original
|
5HN02C
EN6363A
|
PDF
|
PMB2312
Abstract: PMB 2312 siemens Prescaler
Text: SIEMENS Mobile Communications Prescaler Circuit PMB2312 Preliminary Data Bipolar IC Features • • • • • • Low Current Consumption Wide Input Sensitivity Wide Input Frequency Range TTL/CMOS compatible MOD input Standby Mode Switchable divider ratios 64/65 or 128/129
|
OCR Scan
|
PMB2312
Q67000-A6039
a23SbGS
23SbOS
PMB2312
PMB 2312
siemens Prescaler
|
PDF
|