Untitled
Abstract: No abstract text available
Text: MCH6607 Ordering number : EN7039A P-Channel Silicon MOSFET MCH6607 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
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MCH6607
EN7039A
900mm2
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MCH6614
Abstract: No abstract text available
Text: Ordering number : ENN6795 MCH6614 N-Channel and P-Channel Silicon MOSFET MCH6614 Ultrahigh-Speed Switching Applications • The MCH6614 incorporates two elements that are an unit : mm N-channel and a P-channel MOSFETs that feature low 2173 ON resistance and high-speed switching, thereby
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ENN6795
MCH6614
MCH6614
MCH6614]
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MCH6607
Abstract: No abstract text available
Text: Ordering number : ENN7039 MCH6607 P-Channel Silicon MOSFET MCH6607 Ultrahigh-Speed Switching Applications Preliminary • 0.25 2.1 • Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive. Composite type with 2 MOSFETs contained in a single
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ENN7039
MCH6607
MCH6607]
MCH6607
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3LP02C
Abstract: 63853 TA2007
Text: 注文コード No. N 6 3 8 5 3LP02C No. N 6 3 8 5 O0599 新 3LP02C 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・2.5V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃
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3LP02C
O0599
100mA
100mA,
IT00243
IT00242
--10V
IT00241
3LP02C
63853
TA2007
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70306
Abstract: MCH6615 IT0251
Text: MCH6615 Ordering number : EN6796A SANYO Semiconductors DATA SHEET MCH6615 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6615 incorporates two elements in the same package which are N-channel and P-channel low
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MCH6615
EN6796A
MCH6615
70306
IT0251
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Untitled
Abstract: No abstract text available
Text: 3LP02M Ordering number : EN6127A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3LP02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. High-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C
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EN6127A
3LP02M
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IT0251
Abstract: ta2909 MCH6614 TA-2909
Text: MCH6614 注文コード No. N 6 7 9 5 A 三洋半導体データシート 半導体ニューズ No.N6795 をさしかえてください。 MCH6614 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス
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MCH6614
N6795
900mm2
--200mA
900mm2
IT02517
IT02516
IT02518
IT0251
ta2909
MCH6614
TA-2909
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61271
Abstract: 3LP02M
Text: 3LP02M 注文コード No. N 6 1 2 7 A 三洋半導体データシート 半導体ニューズ No.N6127 とさしかえてください。 3LP02M P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。
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3LP02M
N6127
100mA
100mA,
I00242
IT00247
IT00248
61271
3LP02M
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Untitled
Abstract: No abstract text available
Text: 3LP02M Ordering number : EN6127A P-Channel Silicon MOSFET 3LP02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. High-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions
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3LP02M
EN6127A
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN6554 P-Channel Silicon MOSFET 3LP02SP Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2180 [3LP02SP] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 3
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ENN6554
3LP02SP
3LP02SP]
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN6127 P-Channel Silicon MOSFET 3LP02M Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2158 0.3 0.2 0.425 [3LP02M] 0.15 3 0.425 2.1 1.250 0 to 0.1
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ENN6127
3LP02M
3LP02M]
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MCH6607
Abstract: 70393
Text: MCH6607 注文コード No. N 7 0 3 9 A 三洋半導体データシート 半導体ニューズ No.N7039 とさしかえてください。 MCH6607 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長
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MCH6607
N7039
900mm2
100mA
100mA,
900mm2
IT00248
IT00247
IT03641
MCH6607
70393
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Untitled
Abstract: No abstract text available
Text: MCH6615 Ordering number : EN6796A MCH6615 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6615 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting.
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MCH6615
EN6796A
MCH6615
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Untitled
Abstract: No abstract text available
Text: 3LP02C Ordering number : EN6385A P-Channel Silicon MOSFET 3LP02C General-Purpose Switching Device Applications Features • • • Low ON-resistance. High-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions
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3LP02C
EN6385A
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3LP02M
Abstract: No abstract text available
Text: 3LP02M Ordering number : EN6127A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3LP02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. High-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C
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3LP02M
EN6127A
3LP02M
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Untitled
Abstract: No abstract text available
Text: MCH6614 Ordering number : EN6795A MCH6614 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6614 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting.
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MCH6614
EN6795A
MCH6614
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it-007
Abstract: TA2007
Text: Ordering number:ENN6385 P-Channel Silicon MOSFET 3LP02C Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2091A [3LP02C] 0.5 0.4 3 0.16 0.95 0.95 2 1.9 2.9 2.5 1 : Gate
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ENN6385
3LP02C
3LP02C]
it-007
TA2007
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TA2010
Abstract: No abstract text available
Text: Ordering number:ENN6553 P-Channel Silicon MOSFET 3LP02N Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2178 [3LP02N] 5.0 4.0 5.0 4.0 0.6 2.0 0.45 0.5 0.44 14.0 0.45
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ENN6553
3LP02N
3LP02N]
TA2010
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IT0251
Abstract: MCH6615
Text: Ordering number : ENN6796 MCH6615 N-Channel and P-Channel Silicon MOSFETs MCH6615 Ultrahigh-Speed Switching Applications • • The MCH6615 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs,
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ENN6796
MCH6615
MCH6615
MCH6615]
IT0251
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MCH6614
Abstract: TA-2909
Text: MCH6614 Ordering number : EN6795A SANYO Semiconductors DATA SHEET MCH6614 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6614 incorporates two elements in the same package which are N-channel and P-channel low
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MCH6614
EN6795A
MCH6614
TA-2909
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3LP02SP
Abstract: TA-2009
Text: 注文コード No. N 6 5 5 4 3LP02SP No. N 6 5 5 4 52200 新 3LP02SP 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・2.5V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃
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3LP02SP
100mA
100mA,
IT00242
IT00241
IT00247
IT00248
3LP02SP
TA-2009
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IT0251
Abstract: MCH6615 TA2910
Text: MCH6615 注文コード No. N 6 7 9 6 A 三洋半導体データシート 半導体ニューズ No.N6796 をさしかえてください。 MCH6615 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス
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MCH6615
N6796
900mm2
150mA
150mA,
10his
900mm2
IT02520
--10V
IT0251
MCH6615
TA2910
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ta2010
Abstract: TA-2010 3LP02N
Text: 注文コード No. N 6 5 5 3 3LP02N No. N 6 5 5 3 52200 新 3LP02N 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・2.5V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃
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3LP02N
100mA
100mA,
IT00242
IT00241
IT00247
IT00248
ta2010
TA-2010
3LP02N
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sanyo cp-020
Abstract: TA2007 3LP02C N6385
Text: 3LP02C 注文コード No. N 6 3 8 5 A 三洋半導体データシート 半導体ニューズ No.N6385 とさしかえてください。 3LP02C P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。
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3LP02C
N6385
100mA
100mA,
IT00242
IT00241
IT00247
IT00248
sanyo cp-020
TA2007
3LP02C
N6385
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