tlp285-4
Abstract: 5HN01SS
Text: Ordering number : ENN6640 5HN01SS N-Channel Silicon MOSFET 5HN01SS Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2179 [5HN01SS] 0.3 1.4 0.25 0.1 2 0.3 1 0.45
|
Original
|
PDF
|
ENN6640
5HN01SS
5HN01SS]
tlp285-4
5HN01SS
|
MCH6606
Abstract: No abstract text available
Text: Ordering number:ENN6461 N-Channel Silicon MOSFET MCH6606 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2173 [MCH6606] 0.3 5 2 3 0.65 0.25 1 0.15 4 1.6 6 2.1 • Low ON resistance. · Ultrahigh-speed swithcing. · 4V drive. · Composite type with 2 MOSFETs contained in one
|
Original
|
PDF
|
ENN6461
MCH6606
MCH6606]
MCH6606
|
Untitled
Abstract: No abstract text available
Text: MCH6606 Ordering number : EN6461A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6606 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
|
Original
|
PDF
|
EN6461A
MCH6606
900mm2
|
Untitled
Abstract: No abstract text available
Text: 5HN01M Ordering number : EN6136A 5HN01M N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
|
Original
|
PDF
|
EN6136A
5HN01M
|
ENN6639
Abstract: No abstract text available
Text: Ordering number : ENN6639 5HN01SP N-Channel Silicon MOSFET 5HN01SP Ultrahigh-Speed Switching Applications Features • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2180 [5HN01SP] 4.0 2.2 3.0 • Package Dimensions 15.0 0.6 1.8 0.4
|
Original
|
PDF
|
ENN6639
5HN01SP
5HN01SP]
ENN6639
|
EC4403C
Abstract: No abstract text available
Text: Ordering number : ENN7038 EC4403C N-Channel Silicon MOSFET EC4403C Small Signal Switch, Interface Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2197 [EC4403C] 0.5 0.3 0.05 0.2 4 2 1 0.05
|
Original
|
PDF
|
ENN7038
EC4403C
EC4403C]
E-CSP1008-4
EC4403C
|
MCH6606
Abstract: IT00049
Text: MCH6606 注文コード No. N 6 4 6 1 B 三洋半導体データシート 半導体データシート No.N6461A をさしかえてください。 MCH6606 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス
|
Original
|
PDF
|
MCH6606
N6461A
900mm2
IT00052
900mm2
IT01731
IT01732
MCH6606
IT00049
|
Untitled
Abstract: No abstract text available
Text: 5HN01M Ordering number : EN6136B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 5HN01M General-Purpose Switching Device Applications Features • • • Low ON-resistance Ultrahigh-speed switching 4V drive Specifications Absolute Maximum Ratings at Ta=25°C
|
Original
|
PDF
|
5HN01M
EN6136B
|
Untitled
Abstract: No abstract text available
Text: 5HN01C Ordering number : EN6637A 5HN01C N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
|
Original
|
PDF
|
EN6637A
5HN01C
|
Untitled
Abstract: No abstract text available
Text: 5HN01S Ordering number : EN6682A 5HN01S N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
|
Original
|
PDF
|
EN6682A
5HN01S
|
Untitled
Abstract: No abstract text available
Text: MCH6606 Ordering number : EN6461A N-Channel Silicon MOSFET MCH6606 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
|
Original
|
PDF
|
MCH6606
EN6461A
|
5HN01M
Abstract: No abstract text available
Text: Ordering number : ENN6136 5HN01M N-Channel Silicon MOSFET 5HN01M Ultrahigh-Speed Switching Applications Features • Low ON resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2158 [5HN01M] 0.425 • Package Dimensions 0.3 0.2 • 0.15 3 0.425 2.1 1.250
|
Original
|
PDF
|
ENN6136
5HN01M
5HN01M]
5HN01M
|
5HN01SS
Abstract: No abstract text available
Text: 5HN01SS Ordering number : EN6640A SANYO Semiconductors DATA SHEET 5HN01SS N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C
|
Original
|
PDF
|
5HN01SS
EN6640A
5HN01SS
|
5HN01N
Abstract: IT00048 IT00049
Text: 注文コード No. N 6 6 3 8 5HN01N No. N 6 6 3 8 82200 新 5HN01N 特長 N チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃
|
Original
|
PDF
|
5HN01N
IT00046
IT00050
IT00051
IT00052
IT02383
5HN01N
IT00048
IT00049
|
|
marking YC
Abstract: No abstract text available
Text: Ordering number : ENN6682 5HN01S N-Channel Silicon MOSFET 5HN01S Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2192 [5HN01S] 0.75 0.6 1 2 0~0.1 0.1 0.2 0.1max
|
Original
|
PDF
|
ENN6682
5HN01S
5HN01S]
marking YC
|
66382
Abstract: No abstract text available
Text: Ordering number : ENN6638 5HN01N N-Channel Silicon MOSFET 5HN01N Ultrahigh-Speed Switching Applications Features • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2178 5.0 4.0 [5HN01N] 4.0 5.0 • Package Dimensions 0.6 2.0 0.45 0.5
|
Original
|
PDF
|
ENN6638
5HN01N
5HN01N]
66382
|
5HN01S
Abstract: No abstract text available
Text: 5HN01S Ordering number : EN6682A SANYO Semiconductors DATA SHEET 5HN01S N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C
|
Original
|
PDF
|
5HN01S
EN6682A
5HN01S
|
5HN01M
Abstract: No abstract text available
Text: 5HN01M Ordering number : EN6136A SANYO Semiconductors DATA SHEET 5HN01M N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C
|
Original
|
PDF
|
5HN01M
EN6136A
5HN01M
|
EC4403C
Abstract: No abstract text available
Text: EC4403C Ordering number : EN7038A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EC4403C Small Signal Switch and Interface Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C
|
Original
|
PDF
|
EC4403C
EN7038A
EC4403C
|
5HN01C
Abstract: No abstract text available
Text: 5HN01C Ordering number : EN6637A SANYO Semiconductors DATA SHEET 5HN01C N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C
|
Original
|
PDF
|
5HN01C
EN6637A
5HN01C
|
Untitled
Abstract: No abstract text available
Text: 5HN01M Ordering number : EN6136B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 5HN01M General-Purpose Switching Device Applications Features • • • Low ON-resistance Ultrahigh-speed switching 4V drive Specifications Absolute Maximum Ratings at Ta=25°C
|
Original
|
PDF
|
EN6136B
5HN01M
PW10s,
023A-010
|
5HN01C
Abstract: No abstract text available
Text: Ordering number : ENN6637 5HN01C N-Channel Silicon MOSFET 5HN01C Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2091A [5HN01C] 0.4 0.16 0 to 0.1 1 : Gate 2 : Source
|
Original
|
PDF
|
ENN6637
5HN01C
5HN01C]
5HN01C
|
MCH6606
Abstract: No abstract text available
Text: MCH6606 Ordering number : EN6461B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6606 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
|
Original
|
PDF
|
MCH6606
EN6461B
MCH6606
|
Untitled
Abstract: No abstract text available
Text: I Ordering number : ENNSSW N-Channel Silicon MOSFET 5HN01C ISMÊYOi Ultrahigh-Speed Switching Applications Package Dimensions Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. unit : mm 2091A [5H N 0 1C ] 0.4 0.16, ^ = 3 .Oto 0.1
|
OCR Scan
|
PDF
|
5HN01C
|