mn4117405
Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE
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CP005-1F
IS89C51
Z16C02
Z86E30
ZZ16C03
Z8036
Z8536
Z8038
Z5380
Z53C80
mn4117405
NN5118165
XL93LC46AP
NN514265
MS6264L-10PC
w24M257
NN514265A
w24m257ak-15
HY62256ALP10
mhs p80c51
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IS61LV6416-20T
Abstract: IS61LV6416 ISSI IS61LV6416
Text: ISSI ISSI IS61LV6416 IS61LV6416 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES ® ADVANCE INFORMATION OCTOBER 1996 1 DESCRIPTION The ISSI IS61LV6416 is a high-speed, 1,048,576-bit static • High-speed access time: 12, 15, 20 ns • CMOS low power operation
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IS61LV6416
IS61LV6416
576-bit
44-pin
SR1295LV6416
IS61LV6416-20T
ISSI IS61LV6416
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roadmap ISSI
Abstract: IS61C1024 IS61C64AH IS61C64B IS62C64 IS89C52 IS25M080A5T2R IS80C32 flash memory 5v 16M-bit 48 TSOP ISSI
Text: Memory Based Solutions ISSI Integrated Silicon Solution, Inc. ISSI www.issi.com 1 ISSI_498 04/09/98 ® Integrated Silicon Solution, Inc. Memory Based Solutions ISSI Milestones • • • • • • • Incorporated - 1988 First Foundry Partnership TSMC - 1990
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IS22C020
IS22C040
IS22C041
IS22C042
IS82C600
roadmap ISSI
IS61C1024
IS61C64AH
IS61C64B
IS62C64
IS89C52
IS25M080A5T2R
IS80C32
flash memory 5v 16M-bit 48 TSOP
ISSI
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IS61LV6416L-10T
Abstract: No abstract text available
Text: ISSI IS61LV6416L 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES NOVEMBER 2001 DESCRIPTION The ISSI IS61LV6416L is a high-speed, 1,048,576-bit • High-speed access time: 8, 10, 12 ns • CMOS low power operation — 250 mW typical operating
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IS61LV6416L
IS61LV6416L
576-bit
IS61LV6416L-8BI
IS61LV6416L-8TI
IS61LV6416L-8KI
400-mil
IS61LV6416L-10BI
IS61LV6416L-10TI
IS61LV6416L-10KI
IS61LV6416L-10T
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IS61LV6416
Abstract: No abstract text available
Text: ISSI ISSI IS61LV6416 IS61LV6416 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: 10, 12, 15, and 20 ns • CMOS low power operation — 250 mW typical operating — 250 µW (typical) standby • TTL compatible interface levels
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IS61LV6416
IS61LV6416
576-bit
SR006-0F
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61LV6416
Abstract: TBA 810 AT IS61LV6416 K-400
Text: IS61LV6416 IS61LV6416L ISSI 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES JUNE 2003 DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, • High-speed access time: 8, 10, 12 ns • CMOS low power operation — 61LV6416: 75 mW typical operating current
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IS61LV6416
IS61LV6416L
IS61LV6416/IS61LV6416L
61LV6416:
61LV6416L:
576-bit
61LV6416
TBA 810 AT
IS61LV6416
K-400
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Untitled
Abstract: No abstract text available
Text: IS61LV6416 IS61LV6416L ISSI 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES MAY 2004 DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, • High-speed access time: 8, 10, 12 ns • CMOS low power operation — 61LV6416: 75 mW typical operating current
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IS61LV6416
IS61LV6416L
61LV6416:
61LV6416L:
IS61LV6416/IS61LV6416L
576-bit
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Untitled
Abstract: No abstract text available
Text: IS61LV6416 IS61LV6416L ISSI 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES NOVEMBER 2005 DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, • High-speed access time: 8, 10, 12 ns • CMOS low power operation — 61LV6416: 75 mW typical operating current
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IS61LV6416
IS61LV6416L
61LV6416:
61LV6416L:
IS61LV6416/IS61LV6416L
576-bit
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IS61LV6416-10TLI
Abstract: 61LV6416 IS61LV6416 IS61LV6416-8TL
Text: ISSI IS61LV6416 IS61LV6416L 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES NOVEMBER 2005 DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, • High-speed access time: 8, 10, 12 ns • CMOS low power operation — 61LV6416: 75 mW typical operating current
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IS61LV6416
IS61LV6416L
IS61LV6416/IS61LV6416L
61LV6416:
61LV6416L:
576-bit
IS61LV6416-10TLI
61LV6416
IS61LV6416
IS61LV6416-8TL
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Untitled
Abstract: No abstract text available
Text: IS61LV6416 IS61LV6416L ISSI 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES AUGUST 2005 DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, • High-speed access time: 8, 10, 12 ns • CMOS low power operation — 61LV6416: 75 mW typical operating current
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IS61LV6416
IS61LV6416L
61LV6416:
61LV6416L:
IS61LV6416/IS61LV6416L
576-bit
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61LV6416
Abstract: IS61LV6416
Text: IS61LV6416 IS61LV6416L ISSI 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES OCTOBER 2003 DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, • High-speed access time: 8, 10, 12 ns • CMOS low power operation — 61LV6416: 75 mW typical operating current
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IS61LV6416
IS61LV6416L
IS61LV6416/IS61LV6416L
61LV6416:
61LV6416L:
576-bit
61LV6416
IS61LV6416
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Untitled
Abstract: No abstract text available
Text: IS61LV6416 IS61LV6416L ISSI 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES APRIL 2004 DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, • High-speed access time: 8, 10, 12 ns • CMOS low power operation — 61LV6416: 75 mW typical operating current
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IS61LV6416
IS61LV6416L
61LV6416:
61LV6416L:
IS61LV6416/IS61LV6416L
576-bit
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c9013
Abstract: 84 pin PBGA oscilloscope MTBF TSMC retention memory dc 8069 IS61C1024 IC Data-book Q-16 car radio 14x20 TSOP 8638
Text: ISSI Integrated Silicon Solution, Inc. Quality and Reliability 1997-1998 An ISO 9001 Company ISSI ® Quality System Manual QUALITY Reliabilty Report 1997-1998 RELIABILITY Integrated Silicon Solution, Inc. An ISO 9001 Company 1997 Integrated Silicon Solution, Inc.
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R-118
c9013
84 pin PBGA
oscilloscope MTBF
TSMC retention memory
dc 8069
IS61C1024
IC Data-book
Q-16
car radio 14x20
TSOP 8638
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KM62256BLG-7
Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
Text: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC
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C7C1334-10AC
IS61NW6432-8TQ
C7C1334-5AC
IS61NW6432-5TQ
IS61NW6432-6TQ,
C7C1334-7AC
IS61NW6432-7TQ
C7C1335-5
IS61C632A-5TQ
C7C1335-7AC
KM62256BLG-7
K6R4016V1C-FI12
IS62LV1024LL-70T1
K6R4016V1C-TI10
K6R1016C1C-TC12
KM62256BLG7
MT58L32L32PT-7.5
GVT72024A8J-10L
K6R4016V1C-FI10
K6R4008V1C-JC12
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TSOP 28 SPI memory Package flash
Abstract: IS61C256AH IS61C3216 IS61C64AH IS61C64B IS61LV256 IS61LV3216 IS61LV3216L IS62C256 IS62C64
Text: ISSI Celebrating Ten Years 1988 - 1998 Integrated Silicon Solution, Inc. 2231 Lawson Lane • Santa Clara, CA 95054 • 800-379-4774 • Fax: 408-588-0806 e-mail: [email protected] • Web: www.issi.com ISSI® Memory Based Solutions Integrated Silicon Solution, Inc.
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450-mil
300-mil
330-mil
600-mil
TSOP 28 SPI memory Package flash
IS61C256AH
IS61C3216
IS61C64AH
IS61C64B
IS61LV256
IS61LV3216
IS61LV3216L
IS62C256
IS62C64
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70241k
Abstract: d5611 61c256 ic 9022 61c64 RELIABILITY REPORT ISSI vacuum tubes CMS 2015 S/TRANSISTOR J 5804 EQUIVALENT 28F010P
Text: ISSI Integrated Silicon Solution, Inc. Quality and Reliability 1997-1998 An ISO 9001 Company ISSI ® Reliability Report 1997-1998 An ISO 9001 Company 1997 Integrated Silicon Solution, Inc. Integrated Silicon Solution, Inc. • 2231 Lawson Lane • Santa Clara, CA 95054
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R-118
70241k
d5611
61c256
ic 9022
61c64
RELIABILITY REPORT ISSI
vacuum tubes
CMS 2015
S/TRANSISTOR J 5804 EQUIVALENT
28F010P
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IS61C256AH
Abstract: IS61C3216 IS61C64AH IS61C64B IS61LV256 IS61LV3216 IS61LV3216L IS62C256 IS62C64 IS62LV256
Text: ISSI Celebrating Ten Years 1988 - 1998 Integrated Silicon Solution, Inc. 2231 Lawson Lane • Santa Clara, CA 95054 • 800-379-4774 • Fax: 408-588-0806 e-mail: [email protected] • Web: www.issi.com ISSI® Memory Based Solutions Integrated Silicon Solution, Inc.
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450-mil
300-mil
330-mil
600-mil
IS61C256AH
IS61C3216
IS61C64AH
IS61C64B
IS61LV256
IS61LV3216
IS61LV3216L
IS62C256
IS62C64
IS62LV256
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K6X0808C1D-BF55
Abstract: HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L
Text: cross_reference Density Organization Alliance Alliance Part Number Alliance Package Alliance Speed Samsung Samsung Part Number Cypress Cypress Part Number Cypress Package Cypress Package Code Cypress Speed IDT Part Number IDT Package IDT Package Code IDT Speed ISSI
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CY7C128A-15VC
CY7C128A-15SC
CY7C167A-15PC
CY7C168A-15PC
24PIN
20PIN
300MIL
K6X0808C1D-BF55
HY6264P
AS6C1008-55SIN
samsung p28
K6R4016V1D-UC10
as6c4008-55sin
HYNIX
IS61LV25616AL-10KLI
GS71116AGP-10
uPD431000ACZ-70L
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IS61LF51232-8
Abstract: IS61LV25616AL-8TL IS61LF51232 IS61LV5128L-10T GS71116AU-10E 167ML IS61NLP25636A-200TQL IS61QDB22M36 IS61LPS51236-150B IS61LV5128L-12T
Text: ISSI * - Tie down extra four I/Os with resistor + - Tie down extra two I/Os with resistor # - Connect pin 14 FT pin to Vss IS61DDB22M36-167M3 IS61DDB22M36-167M3L IS61DDB22M36-167ML IS61DDB22M36-200M IS61DDB22M36-200M3 IS61DDB22M36-200M3L IS61DDB22M36-200ML
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IS61DDB22M36-167M3
IS61DDB22M36-167M3L
IS61DDB22M36-167ML
IS61DDB22M36-200M
IS61DDB22M36-200M3
IS61DDB22M36-200M3L
IS61DDB22M36-200ML
IS61DDB22M36-250M
IS61DDB22M36-250M3
IS61DDB22M36-250M3L
IS61LF51232-8
IS61LV25616AL-8TL
IS61LF51232
IS61LV5128L-10T
GS71116AU-10E
167ML
IS61NLP25636A-200TQL
IS61QDB22M36
IS61LPS51236-150B
IS61LV5128L-12T
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is62c51216al
Abstract: IS43LR16320B IS66WVE4M16BLL is66wve2m16 IS43DR16640A BGA60 IS66WVE4M16ALL TSOP2-44 IS42SM16400G is45vs16160d
Text: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive electronics (ii) networking/telecommunications infrastructure, (iii) industrial/military/medical electronics (iv) mobile communications and digital
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WINBOND cross reference
Abstract: winbond WINBOND SRAM cross reference CYPRESS SAMSUNG CROSS REFERENCE sram cross reference Winbond Electronics IDT7164 IDT CROSS 64K X 4 SRAM CY7C199
Text: High-Speed SRAM Cross Reference Guide Density bits 64K Org. (bits) 8K*8 Package Type Company Winbond W2465A UTRON UT6164 ISSI IS61C64AH Cypress 256K 32K*8 CY7C185 Voltage 300-mil DIP X 5V X Speed (ns) SOJ SOP TSOP-I STSOP X 12 X X 10/12/15 X X 15/20/25 X
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W2465A
IS61C64AH
300-mil
UT6164
CY7C185
IDT7164
W24257A
CY7C199
IDT71256SA
UT61256
WINBOND cross reference
winbond
WINBOND SRAM cross reference
CYPRESS SAMSUNG CROSS REFERENCE
sram cross reference
Winbond Electronics
IDT7164
IDT CROSS
64K X 4 SRAM
CY7C199
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Untitled
Abstract: No abstract text available
Text: ISSI IS61LV6416 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: 10, 12,15, and 20 ns • CMOS low power operation — 250 mW typical operating — 250 [l\N (typical) standby • TTL compatible interface levels • Single 3.3V ± 10% power supply
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OCR Scan
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IS61LV6416
IS61LV6416
576-bit
SR006-0F
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PDF
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TBA 261
Abstract: No abstract text available
Text: ISSI IS61LV6416 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY ADV“JANUARY “ :.N 1997 "iT,0N FEATURES DESCRIPTION • High-speed access time: 10, 12, 15, and 20 ns The I S S I IS61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated
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OCR Scan
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IS61LV6416
44-pin
IS61LV6416
576-bit
IS61LV6416-12TI
IS61LV6416-12KI
IS61LV6416-15TI
IS61LV6416-15KI
IS61LV6416-20TI
TBA 261
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PDF
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Untitled
Abstract: No abstract text available
Text: IS 6 1 L V 6 4 1 6 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY ISSI ADVANCE INFORMATION FEBRUARY 1998 FEATURES DESCRIPTION • High-speed access time: 10, 12,15, and 20 ns • CMOS low power operation The IS S IIS61LV6416 is a high-speed, 1,048,576-bit static
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OCR Scan
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IIS61LV6416
576-bit
SR006-0F
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PDF
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